unit: mm BAW100 features for high-speed switching electrically insulated diodes absolute m axim um ratings ta = 25 param eter sym bol value unit reverse voltage v r 75 v peak reverse voltage v rm 85 v forward current i f 200 m a s urge forw ard current, t = 1 s i fs 4.5 a total power dissipation, t s =31 p to t 330 m w junction tem perature t j 150 storage tem perature range t stg -65to+150 junction - am bient 1) r th ja 500 k/w junction - soldering point r th js 360 k/w note 1.package m ounted on epoxy pcb 40 m m 40 m m 1.5 mm/6 cm 2 cu product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
electrical characteristics ta = 25 parameter symbol conditions min typ max unit breakdown voltage v br i (br) = 100 a 85 v i f = 1 ma 715 i f = 10 ma 855 i f = 50 ma 1000 i f = 150 ma 1250 v r =75v 1 v r =25v,t a = 150 30 v r =75v,t a = 150 50 diode capacitance c d v r =0v,f=1mhz 2 pf i f =10ma,i r =10ma,r l = 100 measured at i r =1ma 6ns mv a reverse recovery time t rr forward voltage v f reverse current i r marking marking jss sales@twtysemi.com 2 of 2 http://www.twtysemi.com BAW100 product specification 4008-318-123
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