dhg 30 i 1200 ha ns sonic fast recovery diode symbol definition r a t i n g s features / advantages: typ. max. i fsm i r a v 200 i a v f 2.26 r 0.70 k/w v r = 1 3 min. 30 t = 10 ms applications: v rrm v 1200 50 t vj vc = t vj c =ma 0.5 package: part number v r = t vj =c i f =a v t c = 90c d = p tot 180 w t c c = t vj 150 c -55 v i rrm = = 1200 30 1.95 30 t vj = 45c dhg 30 i 1200 ha v a 1200 v 1200 25 25 25 max. repetitive reverse voltage reverse current forward voltage virtual junction temperature total power dissipation max. forward surge current conditions unit 3.00 t vj c =25 c j j unction capacitance v = v; t 125 v f0 v 1.25 t vj = 150c r f 30 f = 1 mhz = c 25 m ? v 2.27 t vj =c i f =a v 1.95 30 3.20 i f =a 60 i f =a 60 threshold voltage slope resistance for power loss calculation only backside: cathode 23 a t vj =c reverse recovery time a 30 200 350 ns (50 hz), sine t rr = 200 ns housing: high performance fast recovery diode low loss and soft recovery single diode to-247 r industry standard outline r epoxy meets ul 94v-0 r rohs compliant r vj i rm max. reverse recovery current i f =a; 30 25 t= 125c vj -di f =a/s 600 /dt t rr v r =v 600 t vj =c 25 t= 125c vj a 11 600 pf thermal resistance junction to case thjc rectangular 0.5 planar passivated chips very low leakage current very short recovery time improved thermal behaviour very low irm-values very soft recovery behaviour avalanche voltage rated for reliable operation soft reverse recovery for low emi/rfi low irm reduces: - power dissipation within the diode - turn-on loss in the commutatin g switch antiparallel diode for high frequency switching devices antisaturation diode snubber diode free wheeling diode rectifiers in switch mode power supplies (smps) uninterruptible power supplies (ups) fav average forward current fav 125 ixys reserves the right to change limits, conditions and dimensions. ? 20110510a data according to iec 60747and per diode unless otherwise specified 2011 ixys all rights reserved
dhg 30 i 1200 ha i rms a per terminal 70 r thch k/w 0.25 m d nm 1.2 mounting torque 0.8 t stg c 150 storage temperature -55 weight g 6 symbol definition ratings typ. max. min. conditions rms current thermal resistance case to heatsink unit f c n 120 mounting force with clip 20 ordering delivering mode base qty code key standard part name dhg 30 i 1200 ha 503098 tube 30 000000 yywwz logo marking on product datecode assembly code abcdef product marking assembly line d h g 30 i 1200 ha part number diode sonic fast recovery diode extreme fast single diode to-247ad (2) = = = dsep30-12a dsep29-12a dsep30-12ar dsep30-12cr to-247ad (2) to-220ac (2) isoplus247 (2) isoplus247 (2) similar part package marking on product DHG30I1200HA 1200 1200 1200 1200 voltage class current rating [a] reverse voltage [v] = = = = ixys reserves the right to change limits, conditions and dimensions. ? 20110510a data according to iec 60747and per diode unless otherwise specified 2011 ixys all rights reserved
dhg 30 i 1200 ha s ? p ? p1 d2 d1 e1 4 123 l l1 2x b2 2x b e 2x e2 d e q a a2 a1 c sym. inches millimeter min. max. min. max. a 0.185 0.209 4.70 5.30 a1 0.087 0.102 2.21 2.59 a2 0.059 0.098 1.50 2.49 d 0.819 0.845 20.79 21.45 e 0.610 0.640 15.48 16.24 e2 0.170 0.216 4.31 5.48 e 0.430 bsc 10.92 bsc l 0.780 0.800 19.80 20.30 l1 - 0.177 - 4.49 ? p 0.140 0.144 3.55 3.65 q 0.212 0.244 5.38 6.19 s 0.242 bsc 6.14 bsc b 0.039 0.055 0.99 1.40 b2 0.065 0.094 1.65 2.39 b4 0.102 0.135 2.59 3.43 c 0.015 0.035 0.38 0.89 d1 0.515 - 13.07 - d2 0.020 0.053 0.51 1.35 e1 0.530 - 13.45 - ? p1 - 0.29 - 7.39 outlines to-247 ixys reserves the right to change limits, conditions and dimensions. ? 20110510a data according to iec 60747and per diode unless otherwise specified 2011 ixys all rights reserved
dhg 30 i 1200 ha 300 400 500 600 700 800 900 1000 1100 1 2 3 4 5 6 7 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40 50 60 q rr [c] i f [a] v f [v] di f /dt [a/s] t vj = 125c t vj =25c t vj = 125c v r =600 v 15 a 30 a 60 a fig. 1 typ. forward current versus v f fig. 2 typ. reverse recov.charge q rr vs. di/dt 300 400 500 600 700 800 900 1000 1100 0 10 20 30 40 50 60 70 i rr [a] di f /dt [a/s] t vj = 125c v r =600v 15 a 30 a 60 a fig. 3 typ. peak reverse current i rm vs. di/dt 300 400 500 600 700 800 900 1000 1100 0 100 200 300 400 500 600 700 t rr [ns] di f /dt [a/s] 15 a 30 a 60 a t vj = 125c v r = 600 v fig. 4 typ. recovery time t rr versus di/dt fig. 5 typ. recovery energy e rec versus di/dt 300 400 500 600 700 800 900 1000 1100 0.0 0.4 0.8 1.2 1.6 2.0 e rec [mj] di f /dt [a/s] t vj =125c v r = 600 v 15 a 30 a 60 a fig. 6 transient thermal impedance 0.001 0.01 0.1 1 10 0.1 1 z thjc [k/w t p [s] r i t i 0.158 0.0005 0.118 0.004 0.155 0.02 0.269 0.15 ixys reserves the right to change limits, conditions and dimensions. ? 20110510a data according to iec 60747and per diode unless otherwise specified 2011 ixys all rights reserved
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