1/3 www.rohm.com c 2011 rohm co., ltd. all rights reserved. 2011.03 - rev. a ? 1a / ? 60v bipolar transistor 2sa2092 ? features ? dimensions (unit : mm) 1) high speed switching. (tf : typ. : 30ns at i c = ? 1a) 2) low saturation voltage. (typ. : ? 200mv at i c = ? 500ma, i b = ? 50ma) 3) strong discharge resistance for inductive load and capacitance load. 4) low switching noise. ? applications high-speed switching, lo w frequency amplification ? structure pnp epitaxial planar silicon transistor ? packaging specifications taping 2sa2092 part no. tl 3000 packaging type tsmt3 package basic ordering unit (pieces) code ? absolute maximum ratings (ta=25 ?c) parameter v v v a mw ? 1 pw=10ms ? 2 each terminal mounted on a recommended land ? 2 ? 1 c a c v cbo v ceo i c p c tj v ebo i cp tstg symbol ?60 ?60 ?6 ?1 ?2 500 150 ?55 to +150 limits unit collector-base voltage collector-emitter voltage emitter-base voltage collector current dc pulse power dissipation junction temperature range of storage temperature each lead has same dimensions abbreviated symbol : vn tsmt3 (1) base (2) emitter (3) collector 0 ~ 0.1 0.16 0.85 1.0max 0.7 0.3 ~ 0.6 ( 2 ) ( 1 ) ( 3 ) 2.9 2.8 1.9 1.6 0.950.95 0.4
2/3 www.rohm.com c 2011 rohm co., ltd. all rights reserved. 2011.03 - rev. a data sheet 2sa2092 ? electrical characteristics (ta=25 qc) parameter symbol bv ebo i cbo i ebo v ce(sat) f t h fe cob ton min. ?6 ? ? ? 120 ? ? ? ? ? 300 ?? 15 30 ? ?1.0 ?1.0 ? ?200 ?500 270 ? ? ? i e = ?100a v ce = ?2v, i c = ?100ma v cb = ?40v v eb = ?4v i c = ?500ma, i b = ?50ma i c = ?1a, i b1 = ?100ma i b2 = 100ma v cc ?25v v ce = ?10v, i e = 100ma, f = 10mhz v cb = ?10v, i e =0 , f = 1mhz v a a mhz mv pf ns tstg ? 100 ? ns tf ? 30 ? ns typ. max. unit conditions bv ceo ?60 ?? v i c = ?100a collector-emitter breakdown voltage collector cut-off current dc current gain transition frequency collector output capacitance turn-on time storage time fall time emitter cut-off current collector-emitter saturation voltage bv cbo ?60 ?? i c = ?1ma v collector-base breakdown voltage emitter-base breakdown voltage ?2 ?3 ?1 ?1 pulse measurement ?2 see switching test circuit ?3 h fe rank ? ? h fe rank q 120-270 ? electrical characteristic curves 10 collector current : i c ( a) base to emitter voltage : v eb ( v) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1 0.01 0.1 fig.1 grounded emitter propagatio n characteristics v ce =2v 125 c 25 c ?40 c fig.2 typical output characteristics collector to emitter voltage : v ce ( v) collector current : i c (ma) 200 160 120 80 40 0 ib=0a 100a 200a 300a 400a 500a 600a 700a 800a 1000a 900a 012 345 fig.3 dc current gain vs. collecto r current ( ) collector current : i c (a) dc current gain : hfe 0.001 0.01 0.1 10 1 1 10 100 1000 125c 25c ?40c v ce =2v 0.001 0.01 0.1 1 0 1 1 10 100 1000 collector current : i c (a) dc current gain : hfe v ce =5v v ce =3v v ce =2v fig.4 dc current gain vs. collector current (?) ta=25c 0.001 0.01 0.1 0.01 0.1 1 10 collector saturation voltage : v ce (sat )(v) collector current : i c (a) 10 1 fig.5 collector-emitter saturation voltag e vs. collector current ( ) i c /i b =10/1 125c 25c ?40c 0.001 0.1 0.01 10 1 0.01 0.1 1 10 collector current : i c ( a) collector saturation voltage : v ce ( sat)(v) f ig.6 collector-emitter saturation voltag e vs. collector current (?) i c /i b =10/1 i c /i b =20/1 ta=25c
3/3 www.rohm.com c 2011 rohm co., ltd. all rights reserved. 2011.03 - rev. a data sheet 2sa2092 collector current : i c (a) base emitter saturation voltage : v be (sat ) (v) fig.7 base-emitter saturation voltag e vs. collector current 0.001 0.01 0.1 10 1 1 0.01 0.1 10 125c i c /i b =10/1 25c ?40c 1000 transition frequency : f t (mhz) emitter current : i e (a ) 1 0 1 0.1 0.01 0.001 100 10 1 fig.8 transition frequency ta=25c v ce =10v 1 10 1000 100 collecotr output capacitacne : cob (p f) emitter input capacitance : cib (pf) collector to base voltage : v ce (v) emitter to base voltage : v be (v) 0.1 1 10 10 0 fig.9 collector output capacitanc e emitter input capacitance cib ta=25c f=1mhz cob fig.10 switching time 1 0.01 0.1 1 0 1000 100 10 collector current : i c (a) switching time : sw (ns) ta=25c v cc = ?25v i c /i b = ?i c /i b2 =10 tstg tf ton ? switching characteristics measurement circuits p w v in r l =25 i c i b 1 i b 2 p w 50 s duty cycle 1% v cc ?25 v ton tstg tf i c i b 2 i b 1 10% 90% b ase current waveform c ollector current waveform
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