vishay siliconix dg2735, dg2736 document number: 74420 s12-2498-rev. d, 22-oct-12 www.vishay.com 1 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: analogswitchtechsupport@vishay.com low voltage, 0.6 ? , dual spdt analog switch description the dg2735, dg2736 are low voltage, low on-resistance, dual single-pole/double-throw (spdt) monolithic cmos analog switches designed for high performance switching of analog signals. combining low-power, high speed, low on-resistance, and small package size, the dg2735, dg2736 are ideal for portable and battery power applications. the dg2735, dg2736 have an op eration range from 1.65 v to 4.3 v single supply. the dg2735 has two separate control pins with for the separated two spdt switc hed. the dg2736 has an en pin. all switches are at high impedance mode when the en is high. the dg2735, dg2736 are guaranteed 1.65 v logic compatible, allowing the easy interface with low voltage dsp or mcu control logic and ideal for one cell li-ion battery direct power. the switch conducts signals within power rails equally well in both directions when on, and blocks up to the power supply level when off. break-before-make is guaranteed. the dg2735, dg2736 are built on vishay siliconix?s sub micron cmos low voltage process technology and provides greater than 300 ma latch-up protection, as tested per jesd78. as a committed partner to the community and the environment, vishay siliconix m anufactures this product with lead (pb)-free device term inations. dg2735, dg2736 are offered in a miniqfn package. the miniqfn package has a nickel-palladium-gold device termination and is represented by the lead (pb)-free ?-e4? suffix. the nickel-palladium-gold device terminations meet all jedec standards for reflow and msl ratings. features ? low voltage operation (1.65 v to 4.3 v) ? low on-resistance - r on : 0.6 ? at 2.7 v ? fast switching: t on = 55 ns at 2.7 v ?t off = 40 ns at 2.7 v ? latch-up current > 300 ma (jesd78) ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 benefits ? reduced power consumption ? high accuracy ? reduce board space ? ttl/1.65 v logic compatible applications ? cellular phones ? speaker headset switching ? audio and video signal routing ? pcmcia cards ? battery operated systems ? portable media player handheld test instruments functional block diagram and pin configuration g n d n c2 dg2735 miniqfn-10l 6 7 2 1 v + n o1 com1 n c1 i n 1 3 4 5 i n 2 com2 n o2 8 9 10 pin 1: long lead device markin g : ax for dg2735 device markin g : bx for dg2736 x = date/lot traceability code g n d n c2 dg2736 miniqfn-10l 6 7 2 1 v + n o1 com1 n c1 i n 1 3 4 5 e n com2 n o2 8 9 10 pin 1: long lead (top v ie w ) (top v ie w ) or pin 1 n ote: pin 1 has long lead ax bx pin 1
vishay siliconix dg2735, dg2736 document number: 74420 s12-2498-rev. d, 22-oct-12 www.vishay.com 2 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: analogswitchtechsupport@vishay.com notes: a. signals on nc, no, or com or in exceeding v+ will be clamped by inte rnal diodes. limit forward diode current to maximum curr ent ratings. b. all leads welded or soldered to pc board. c. derate 4 mw/c above 70 c. truth table logic en (dg2736 only) nc1, 2 no1, 2 01offoff 11offoff 00onoff 10offon ordering information temp. range package part number - 40 c to 85c miniqfn10 dg2735dn-t1-e4 dg2736dn-t1-e4 absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit reference to gnd v+ - 0.3 to 5 v in, com, nc, no a - 0.3 to (v+ + 0.3) current (any terminal except no, nc or com) 30 ma continuous current (no, nc, or com) 250 peak current (pulsed at 1 ms, 10 % duty cycle) 500 storage temperature (d suffix) - 65 to 150 c power dissipation (packages) b miniqfn10 c 208 mw specifications (v+ = 3 v) parameter symbol test conditions unless otherwise specified v+ = 3 v, 10 %,v in = 0.4 v or 1.65 v e temp. a limits - 40 c to 85 c unit min. b typ. c max. b analog switch analog signal range d v analog r ds(on) full 0 v+ v on-resistance r ds(on) v+ = 2.7 v, i no/nc = 100 ma, v com = 0.5 v room 0.5 0.6 ? v+ = 2.7 v, i no/nc = 100 ma, v com = 1.5 v v+ = 2.7 v, i no/nc = 100 ma, v com = 0.5 v full 0.5 v+ = 2.7 v, i no/nc = 100 ma, v com = 1.5 v v+ = 4.3 v, i no/nc = 100 ma, v com = 0.9 v room 0.4 0.5 v+ = 4.3 v, i no/nc = 100 ma, v com = 2.5 v 0.3 v+ = 4.3 v, i no/nc = 100 ma, v com = 0.9 v full 0.5 v+ = 4.3 v, i no/nc = 100 ma, v com = 2.5 v r on match d ? r on v+ = 2.7 v, i no/nc = 100 ma, v com = 0.5 v, 1.5 v room 0.06 0.08 v+ = 4.3 v, i no/nc = 100 ma, v com = 0.9 v, 2.5 v r on resistance flatness d r on flatness v+ = 2.7 v, i no/nc = 100 ma, v com = 0.5 v, 1.5 v room 0.15 switch off leakage current i no/nc(off) v+ = 4.3 v, v no/nc = 0.3 v/4 v, v com = 4 v/0.3 v room - 2 2 na full - 10 10 i com(off) room - 2 2 full - 10 10 channel-on leakage current i com(on) v+ = 4.3 v, v no/nc = v com = 4 v/0.3 v room full - 5 5 - 20 20
vishay siliconix dg2735, dg2736 document number: 74420 s12-2498-rev. d, 22-oct-12 www.vishay.com 3 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: analogswitchtechsupport@vishay.com notes: a. room = 25 c, full = as determined by the operating suffix. b. the algebraic convention whereby the most negative value is a minimum and the most pos itive a maximum, is used in this data sheet. c. typical values are for design aid only, not guaranteed nor subject to production testing. d. guarantee by design, not subjected to production test. e. v in = input voltage to perform proper function. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended per iods may affect device reliability. parameter symbol test conditions unless otherwise specified v+ = 3 v, 10 %,v in = 0.4 v or 1.65 v e temp. a limits - 40 c to 85 c unit min. b typ. c max. b digital control input high voltage v inh full 1.65 v input low voltage v inl full 0.4 input capacitance c in full 6 pf input current i inl or i inh v in = 0 or v+ full - 1 1 a dynamic characteristics break-before-make time e t bbm v+ = 3.6 v, v no , v nc = 1.5 v, r l = 50 ? , c l = 35 pf room 1 5 ns tu r n - o n t i m e e t on room 50 78 full 80 turn-off time e t off room 35 58 full 60 enable turn-on time e dg2736 (en) t on(en) room 50 78 full 80 enable turn-off time e dg2736 (en) t off(en) room 35 58 full 60 off-isolation d o irr r l = 50 ? , c l = 5 pf, f = 100 khz room - 70 db crosstalk d x ta l k - 70 3db bandwith d r l = 50 ? , c l = 5 pf room 50 mhz no, nc off capacitance d c no(off) v in = 0 v, or v+, f = 1 mhz room 55 pf c nc(off) 55 channel on capacitance d c no(on) 130 c nc(on) 130 power supply power supply range v+ 1.65 4.3 v power supply current i+ v in = 0 or v+ full 1 a specifications (v+ = 3 v)
vishay siliconix dg2735, dg2736 document number: 74420 s12-2498-rev. d, 22-oct-12 www.vishay.com 4 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: analogswitchtechsupport@vishay.com typical characteristics (t a = 25 c, unless otherwise noted) r on vs. v com and supply voltage r on vs. analog voltage and temperature r on vs. analog voltage and temperature v com - analog v oltage ( v ) ( ) e c n a t s i s e r - n o - r n o 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 2.0 2.2 2.4 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 i n o/ n c = 100 ma t a = 25 c v + = 1.5 v v + = 1. 8 v v + = 2.7 v v + = 3.6 v v + = 4.3 v v + = 3.0 v v com - analog v oltage ( v ) ( ) e c n a t s i s e r - n o - r n o 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.5 1 1.5 2 2.5 3 + 25 c + 8 5 c i s = 100 ma n c v + = 2.7 v , - 40 c v com - analog v oltage ( v ) ( ) e c n a t s i s e r - n o - r n o 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 i s = 100 ma n c v + = 4.3 v , + 25 c + 8 5 c - 40 c r on vs. analog voltage and temperature r on vs. analog voltage and temperature supply current vs. temperature v com - analog v oltage ( v ) ( ) e c n a t s i s e r - n o - r n o 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 + 8 5 c + 25 c - 40 c i s = 100 ma n o v + = 2.7 v , v com - analog v oltage ( v ) ( ) e c n a t s i s e r - n o - r n o 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 + 8 5 c + 25 c - 40 c i s = 100 ma n o v + = 4.3 v , temperat u re (c) ) a p ( t n e r r u c y l p p u s - + i 1 10 100 1000 10 000 100 000 - 60 - 40 - 20 0 20 40 60 8 0100 v + = 4.3 v
vishay siliconix dg2735, dg2736 document number: 74420 s12-2498-rev. d, 22-oct-12 www.vishay.com 5 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: analogswitchtechsupport@vishay.com typical characteristics (t a = 25 c, unless otherwise noted) leakage current vs. temperature leakage vs. analog voltage temperat u re (c) ) a p ( t n e r r u c e g a k a e l - 60 - 40 - 20 0 20 40 60 8 0 100 1 10 100 1000 10 000 100 000 i n c(off) i com(off) i com(on) v + = 4.3 v v com , v n o , v n c - analog v oltage ( v ) ) a p ( t n e r r u c e g a k a e l - 5 - 4 - 3 - 2 - 1 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 i n o(off) i com(off) i com(on) switching time vs. temperature insertion loss, off-isolation crosstalk vs. frequency temperat u re (c) t o n , t off - s w itching time (ns) 0 5 10 15 20 25 - 60 - 40 - 20 0 20 40 60 8 0 100 t off v + = 2.7 v t o n v + = 4.3 v t off v + = 4.3 v t o n v + = 2.7 v 300 k 1 mhz 10 mhz 100 mhz 1 ghz fre qu ency (hz) loss, oirr, x talk (db) - 8 0 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 10 dg2735a oirr loss xtalk v + = 3.0 v r = 50 l switching threshold vs. supply voltage 0.0 0.5 1.0 1.5 2.0 v + - s u pply v oltage ( v ) h t g n i h c t i w s - ) v ( d l o h s e r v t 1.0 1.5 2.0 2.5 3.0 4.0 3.5
vishay siliconix dg2735, dg2736 document number: 74420 s12-2498-rev. d, 22-oct-12 www.vishay.com 6 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: analogswitchtechsupport@vishay.com test circuits figure 1. switching time switch input c l (includes fixture and stray capacitance) v+ in no or nc c l 35 pf com logic input r l 50 v out gnd v+ 50% 0 v logic input switch output t on t off logic ?1? = switch on logic input waveforms inverted for switches that have the opposite logic sense. 0 v switch output v out v com r l r l r on 0.9 x v out t r 5 ns t f 5 ns v inh v inl = + < < ( ) figure 2. break-before-make interval c l (includes fixture and stray capacitance) nc v no no v nc 0 v logic input switch output v o v nc = v no t r < 5 ns t f < 5 ns 90% t d t d in com v+ gnd v+ c l 35 pf v o r l 50 v inl v inh
vishay siliconix dg2735, dg2736 document number: 74420 s12-2498-rev. d, 22-oct-12 www.vishay.com 7 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: analogswitchtechsupport@vishay.com test circuits vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74420 . figure 3. charge injection off on on in v out v out q = v out x c l c l = 1 nf r gen v out com v in = 0 - v+ in gnd v+ v+ in depends on switch configuration: input polarity determined b y sense of switch. + nc or no v gen figure 4. off-isolation in gnd nc or no 0v, 2.4 v 10 nf com off isolation 20 log v com v no / nc r l analyzer v+ v+ com = figure 5. channel off/on capacitance nc or no f = 1 mhz in com gnd 0 v, 2.4 v meter hp4192a impedance analyzer or equivalent 10 nf v+ v+
vishay siliconix package information document number: 74496 12-feb-07 www.vishay.com 1 mini qfn-10l case outline dim millimeters inches min. nam. max. min. nam. max. a 0.50 0.55 0.60 0.0197 0.0217 0.0236 a1 0.00 - 0.05 0.000 - 0.002 b 0.15 0.20 0.25 0.006 0.008 0.010 c 0.15 ref 0.006 ref d 1.75 1.80 1.85 0.069 0.071 0.073 e 1.35 1.40 1.45 0.053 0.055 0.057 e 0.40 bsc 0.016 bsc l 0.35 0.40 0.45 0.014 0.016 0.018 l1 0.45 0.50 0.55 0.0177 0.0197 0.0217 ecn t-07039-rev. a, 12-feb-07 dwg: 5957
document number: 66554 www.vishay.com revision: 05-mar-10 1 pad pattern vishay siliconix recommended minimum pads for mini qfn 10l mounting footprint dimen s ion s in mm (inch) 10 x 0.225 (0.0089) 1 9 x 0.663 (0.0261) 0.200 (0.0079) 0.400 (0.0157) pitch 2.100 (0.0827) 1.700 (0.0669) 0.563 (0.0221)
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