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1 p-channel 20 v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % r g test ed ? typical esd performance 1200 v ? aec-q101 qualifiedc ? compliant to rohs directive 2002/95/ec applications ? load switch for portable devices prod uct summary v ds (v) r d s(on) ( ) i d (a ) a q g ( typ.) - 20 0.065 at v gs = - 4.5 v - 4 7 .6 nc 0.090 at v gs = - 2.5 v - 3.8 0.110 at v gs = - 1.8 v - 3.3 0.165 at v gs = - 1.5 v - 0.5 or derin g information: dts 2305 (lead (p b )-free and halogen-free) g t o-236 (sot-23) s d t op v ie w 2 3 1 dts notes: a. t c = 2 5 c. b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. maximum under steady state conditions is 130 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted p arameter symbol limit unit drain-source voltage v ds - 20 v gat e-source voltage v gs 8 contin uous drain current (t j = 150 c) t c = 25 c i d - 4 a t c = 70 c - 3. 5 t a = 25 c - 3.7 b, c t a = 70 c - 2.9 b, c pulsed dr ain current i dm - 20 contin uous source-drain diode current t c = 25 c i s - 1. 5 t a = 25 c - 1.0 b, c max imum power dissipation t c = 25 c p d 1.8 w t c = 70 c 1.1 t a = 25 c 1.2 5 b, c t a = 70 c 0.8 b, c ope rating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings p arameter symbol typical maximum unit maximum junction-to-ambient b, d t 5 s r thj a 80 100 c /w maximum junction-to-foot (drain) steady state r thjf 55 70 s g d p-channel mosfet
2 no tes: a. pulse test; pulse width d 300 s, duty cycle d 2 %. b. guaranteed by design, not s ubject to production testing. st resses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. s pecifications t j = 25 c, unless otherwise noted p arameter symbol test conditions min. typ. max. unit static drain-source breakdo wn voltage v ds v gs = 0 v, i d = - 250 a - 20 v v ds t emperature coefficient ' v ds /t j i d = - 250 a - 13 mv/c v gs( th) t emperature coefficient ' v gs( th) /t j 2.5 gate-s ource threshold voltage v gs( th) v ds = v gs , i d = - 25 0 a - 0.4 - 1 v gate-source leakage i gss v ds = 0 v , v gs = 8 v 6 a v ds = 0 v, v gs = 4.5 v 0.5 zero gate voltage drain current i dss v ds = - 20 v , v gs = 0 v - 1 v ds = - 20 v, v gs = 0 v , t j = 55 c - 10 on-state drain current a i d (on) v ds d - 5 v , v gs = - 4.5 v - 15 a drain-source on-state resistance a r ds( on) v gs = - 4.5 v , i d = - 3.2 a 0.050 0.065 : v gs = - 2.5 v , i d = - 2.8 a 0.065 0.090 v gs = - 1.8 v , i d = - 1.5 a 0.090 0.110 v gs = - 1.5 v , i d = - 0.5 a 0.110 0.165 forward transconductance a g fs v ds = - 10 v, i d = - 3. 2 a 12 s dy namic b t otal gate charge q g v ds = - 10 v , v gs = - 8 v, i d = - 5.3 a 14 21 nc gate-source charge v ds = - 10 v, v gs = - 4.5 v, i d = - 5. 3 a 7.6 12 q gs 0.8 gate- drain charge q gd 3.1 g ate resistance r g f = 1 mhz 0.4 2 4 k : tu r n - o n d e l ay t i m e t d( on) v dd = - 10 v, r l = 2.3 : i d # - 4.3 a, v gen = - 4.5 v, r g = 1 : 0.20 0.3 s rise time t r 1.00 1.50 turn-off delay time t d( off) 4.00 6.00 fall time t f 2.00 3.00 tu r n - o n d e l ay t i m e t d( on) v dd = - 10 v, r l = 2.3 : i d # - 4.3 a, v gen = - 8 v, r g = 1 : 0.09 0.14 rise time t r 0.40 0.60 turn-off delay time t d( off) 5.20 7.80 fall time t f 2.30 3.50 drain -source body diode characteristics continuous source-drain diode current i s t c = 25 c - 1.5 a pulse diode forward current i sm - 20 body diode v oltage v sd i s = - 3 a, v gs = 0 v - 0.8 - 1.2 v body diode reverse recovery time t rr i f = - 3 a, di/dt = 10 0 a/s, t j = 25 c 30 60 ns body diode reverse recovery charge q rr 20 40 nc reverse recovery fall time t a 13 ns re verse recovery rise time t b 17 3 typica l characteristics 25 c, unless otherwise noted gate cu rrent vs. gate-source voltage output characteristics on-resistance vs. drain current v gs - gate-to-so u rce v oltage ( v ) i gss - gate c u rrent (ma) 0.0 0.3 0.6 0.9 1.2 1.5 03 691215 t j = 25 c 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =5 v thr u 2.5 v v gs =1 v v gs =2 v v gs =1 .5 v v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d - on -resistance ( ) r ds( on) i d - drain c u rrent (a) 0.00 0.03 0.06 0.09 0.12 0.15 0.1 8 0.21 04 8 12 16 20 v gs =1 . 8v v gs =4 .5 v v gs =1 .5 v v gs =2 .5 v g ate current vs. gate-source voltage transfer characteristics gate charge v gs - gate-to-so u rce v oltage ( v ) i gss - gate c u rrent (a) 10 -9 10 - 8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 0 3 6 9 12 15 t j = 25 c t j = 150 c 0 2 4 6 8 10 0.0 0.4 0. 8 1.2 1.6 2.0 t c = 25 c t c = 125 c t c = - 55 c v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0 2 4 6 8 0 3 6 9 12 15 v ds =1 6 v i d =5 .3a v ds =5 v v ds =1 0 v - gate -to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs 4 ty pical characteristics 25 c, unless otherwise noted on -resistance vs. junction temperature on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 - 50 - 25 0 25 50 75 100 125 150 v gs =4 .5 v ,2.5 v ;i d =3 .2a v gs =1 . 8v ;i d =1 .5a t j -j u nction temperat u re (c) ( n ormalized) - on -resistance r ds(on) - on -resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) 0.00 0.03 0.06 0.09 0.12 0.15 0.1 8 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 i d = 3.2 a; t j = 25 c i d =0 .5a;t j =2 5 c i d = 3.2 a; t j = 125 c i d =0 .5a;t j = 125 c po w er ( w ) 0 10 20 30 40 time (s) 10 1000 0.1 0.01 0.001 100 1 sou re-drain diode forward voltage threshold voltage safe operating area, junction-to-ambient 0.1 1 10 100 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 t j = 25 c t j = 150 c v sd -s o u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 0.3 0.4 0.5 0.6 0.7 0. 8 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ( v ) v gs( th) t j - temperat u re (c) v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds (on) is specified - drain c u rrent (a) i d 100 1 0.1 1 10 100 0.01 10 0.1 t a = 25 c single p u lse 100 ms limited b yr ds (on) * b v dss limited 1m s 100 s 10 ms 1s ,10s dc 5 typica l characteristics 25 c, unless otherwise noted * the power dissipation p d is b ased on t j(max ) = 15 0 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* t c - case temperat u re (c) i d - drain c u rrent (a) 0 1 2 3 4 5 0 255075100125150 po wer derating t c - case t emperat u re (c) r ( w ) e w op 0.0 0.4 0. 8 1.2 1.6 2.0 25 50 75 100 125 150 6 ty pical characteristics 25 c, unless otherwise noted norm alized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 sq u are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja =1 30 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycle = 0.5 single p u lse 0.02 0.05 no rmalized thermal transient impedance, junction-to-foot 10 -3 10 -2 0 1 1 10 -1 10 -4 0.2 0.1 d u ty cycle = 0.5 sq u are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 0.05 single p u lse 0.02 1 sot-23 ( to-236): 3-lead b e e 1 1 3 2 s e e 1 d a 2 a a 1 c s e a ting pla ne 0.10 mm 0.004" c c l 1 l q g au ge pl a ne s e a ting pla ne 0.25 mm dim millimet ers inches mi n max mi n max a 0 .89 1.12 0.035 0.044 a 1 0 .01 0.10 0.0004 0.004 a 2 0 .88 1.02 0.0346 0.040 b 0. 3 5 0.50 0.014 0.020 c 0.085 0.18 0.00 3 0.007 d 2.80 3.04 0.110 0.120 e 2.10 2.64 0.08 3 0.104 e 1 1 .20 1.40 0.047 0.055 e 0.95 bsc 0.0 374 ref e 1 1.90 bsc 0.0 748 ref l 0.40 0.60 0.016 0.024 l 1 0.6 4 ref 0.025 ref s 0.50 ref 0. 020 ref q 3 8 38 ecn: s-0 3 946-rev. k, 09-jul-01 dwg: 5479 package information www.din-tek.jp 1 application note rec ommended minimum pads for sot-23 0.106 (2.692) recommended mi nimum pads dimensions in inches/(mm) 0.022 (0.559) 0.049 (1.245) 0.029 (0.724) 0.037 (0.950) 0.053 (1.341) 0.097 (2.459) return to index r etur n to index application note www.din-tek.jp 1 disclaimer all prod uct, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. din-tek intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, din-tek ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. din-tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, din-tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for 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expressly indicate d in writing, din-tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the din-tek product could result in personal injury or death. customers using or selling din-tek products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized din-tek personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of din-tek . product names and markings noted herein may be trad emarks of their respective owners. material category policy din-tek intertech nology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some din-tek documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. din-tek intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some din-tek documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards. legal disclaimer notice www.din-tek.jp |
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