vishay siliconix SIJ482DP new product document number: 63728 s12-0544-rev. a, 12-mar-12 www.vishay.com 1 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical support, please contact: pmostechsupport@vishay.com n-channel 80 v (d-s) mosfet features ? trenchfet ? power mosfet ?100 % r g and uis tested ? capable of operating with 5 v gate drive ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? dc/dc primary side switch ? synchronous rectification ? high current switching notes: a. based on t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. see solder profile ( www.vishay.com/doc?73257 ). the powerpak so-8l is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulati on process in manufacturing. a solder fill et at the exposed copper tip cannot be guara nteed and is not required to ensure adequate botto m side solder interconnection. e. rework conditions: manual soldering with a sol dering iron is not recommended for leadless components. f. maximum under steady state conditions is 65 c/w. g. package limited. product summary v ds (v) r ds(on) ( ? ) (max.) i d (a) a, g q g (typ.) 80 0.0062 at v gs = 10 v 60 24 nc 0.0065 at v gs = 7.5 v 0.0095 at v gs = 4.5 v 4 6.15 mm powerpak ? so-8l single ordering information: SIJ482DP-t1-ge3 (lead (pb)-free and halogen-free) 5.13 mm 3 2 1 g s s s d n-channel mosfet g d s absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 80 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 60 g a t c = 70 c 60 g t a = 25 c 21.1 b, c t a = 70 c 16.9 b, c pulsed drain current (t = 300 s) i dm 100 continuous source-drain diode current t c = 25 c i s 60 g t a = 25 c 4.5 b, c single pulse avalanche current l = ? 0.1 mh i as 30 single pulse avalanche energy e as 45 mj maximum power dissipation t c = 25 c p d 69.4 w t c = 70 c 44.4 t a = 25 c 5 b, c t a = 70 c 3.2 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, f t ? 10 s r thja 20 25 c/w maximum junction-to-case (drain) steady state r thjc 1.3 1.8
www.vishay.com 2 document number: 63728 s12-0544-rev. a, 12-mar-12 vishay siliconix SIJ482DP new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical support, please contact: pmostechsupport@vishay.com notes: a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 80 v v ds temperature coefficient ? v ds /t j i d = 250 a 36 mv/c v gs(th) temperature coefficient ? v gs(th) /t j - 5.7 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.5 2.7 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 80 v, v gs = 0 v 1 a v ds = 80 v, v gs = 0 v, t j = 55 c 10 on-state drain current a i d(on) v ds ?? 5 v, v gs = 10 v 30 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 20 a 0.0051 0.0062 ? v gs = 7.5 v, i d = 15 a 0.0054 0.0065 v gs = 4.5 v, i d = 10 a 0.0068 0.0095 forward transconductance a g fs v ds = 10 v, i d = 20 a 68 s dynamic b input capacitance c iss v ds = 40 v, v gs = 0 v, f = 1 mhz 2425 pf output capacitance c oss 1180 reverse transfer capacitance c rss 100 total gate charge q g v ds = 40 v, v gs = 10 v, i d = 10 a 47 71 nc v ds = 40 v, v gs = 7.5 v, i d = 10 a 36.5 55 v ds = 40 v, v gs = 4.5 v, i d = 10 a 24 36 gate-source charge q gs 6.6 gate-drain charge q gd 10.2 output charge q oss v ds = 40 v, v gs = 0 v 69 105 gate resistance r g f = 1 mhz 0.4 1.1 2.2 ? tu r n - o n d e l ay t i m e t d(on) v dd = 40 v, r l = 4 ? i d ? 10 a, v gen = 10 v, r g = 1 ? 14 28 ns rise time t r 11 22 turn-off delay time t d(off) 36 72 fall time t f 918 tu r n - o n d e l ay t i m e t d(on) v dd = 40 v, r l = 4 ? i d ? 10 a, v gen = 7.5 v, r g = 1 ? 16 32 rise time t r 13 26 turn-off delay time t d(off) 35 70 fall time t f 11 22 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 60 a pulse diode forward current a i sm 100 body diode voltage v sd i s = 4 a 0.73 1.1 v body diode reverse recovery time t rr i f = 10 a, di/dt = 100 a/s, t j = 25 c 46 90 ns body diode reverse recovery charge q rr 44 86 nc reverse recovery fall time t a 21 ns reverse recovery rise time t b 25
document number: 63728 s12-0544-rev. a, 12-mar-12 www.vishay.com 3 vishay siliconix SIJ482DP new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical support, please contact: pmostechsupport@vishay.com typical characteristics (25 c, unless otherwise noted) output characteristics on-resistance vs. drain current and gate voltage gate charge 0 20 40 60 80 100 0.0 0.5 1.0 1.5 2.0 2.5 i d - drain current (a) v d s - drain-to- s ource voltage (v) v gs = 4 v v gs = 10 v thru 5 v v gs = 3 v 0.004 0.005 0.006 0.007 0.008 0.009 0 20 40 60 80 100 r d s (on) - on-resistance () i d - drain current (a) v gs = 4.5 v v gs = 7.5 v v gs = 10 v 0 2 4 6 8 10 0 10 20 30 40 50 v gs - g ate-to- s ource voltage (v) q g - total g ate charge (nc) v d s = 40 v v d s = 50 v v d s = 30 v i d = 10 a transfer characteristics capacitance on-resistance vs. junction temperature 0 2 4 6 8 10 0 1 2 3 4 5 i d - drain current (a) v gs - g ate-to- s ource voltage (v) t c = 25 c t c = 125 c t c = - 55 c 0 800 1600 2400 3200 4000 0 16 32 48 64 80 c - capacitance (pf) v d s - drain-to- s ource voltage (v) c iss c oss c rss 0.6 0.9 1.2 1.5 1.8 2.1 - 50 - 25 0 25 50 75 100 125 150 r d s (on) - on-resistance (normalized) t j - junction temperature ( c) i d = 20 a v gs = 10 v v gs = 4.5 v
www.vishay.com 4 document number: 63728 s12-0544-rev. a, 12-mar-12 vishay siliconix SIJ482DP new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical support, please contact: pmostechsupport@vishay.com typical characteristics (25 c, unless otherwise noted) source-drain diode forward voltage threshold voltage 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - s ource current (a) v s d - s ource-to-drain voltage (v) t j = 150 c t j = 25 c - 1.0 - 0.7 - 0.4 - 0.1 0.2 0.5 -50 -25 0 25 50 75 100 125 150 v gs (th) variance (v) t j - temperature ( c) i d = 250 a i d = 5 ma on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.00 0.01 0.02 0.03 0.04 0.05 0246810 r d s (on) - on-resistance () v gs - g ate-to- s ource voltage (v) t j = 125 c t j = 25 c i d = 20 a 0 40 80 120 160 200 0.001 0.01 0.1 1 10 power (w) time (s) safe operating area, junction-to-ambient 0.01 0.1 1 10 100 0.1 0.01 1 10 100 i d - drain current (a) v d s - drain-to- s ource voltage (v) * v gs > minimum v gs at which r d s (on) is specified 100 s 100 ms limited by r d s (on) * 1 ms i dm limited t a = 25 c s ingle pulse bvd ss limited 10 ms 10 s 1 s dc i d limited
document number: 63728 s12-0544-rev. a, 12-mar-12 www.vishay.com 5 vishay siliconix SIJ482DP new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical support, please contact: pmostechsupport@vishay.com typical characteristics (25 c, unless otherwise noted) * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determ ine the current rating, when this rating falls below the package limit. current derating* 0 18 36 54 72 90 0 25 50 75 100 125 150 i d - drain current (a) t c - case temperature ( c) package limited power, junction-to-case 0 17 34 51 68 85 0255075100125150 power (w) t c - case temperature ( c) power, junction-to-ambient 0.0 0.5 1.0 1.5 2.0 2.5 0255075100125150 power (w) t a - ambient temperature ( c)
www.vishay.com 6 document number: 63728 s12-0544-rev. a, 12-mar-12 vishay siliconix SIJ482DP new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical support, please contact: pmostechsupport@vishay.com typical characteristics (25 c, unless otherwise noted) vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data,see www.vishay.com/ppg?63728 . normalized thermal transient im pedance, junction-to-ambient 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized effective transient thermal impedance s quare wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 s ingle pulse notes: 1. duty cycle, d = 2. per unit base = r thja = 65 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 4. s urface mounted t 1 p dm t 2 normalized thermal transient impedance, junction-to-case 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 normalized effective transient thermal impedance s quare wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 s ingle pulse
package information www.vishay.com vishay siliconix revision: 27-aug-12 1 document number: 69003 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 powerpak ? so-8l case outline
package information www.vishay.com vishay siliconix revision: 27-aug-12 2 document number: 69003 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? millimeters will gover dim. millimeters inches min. nom. max. min. nom. max. a 1.00 1.07 1.14 0.039 0.042 0.045 a1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 0.004 b4 0.47 0.019 c 0.20 0.25 0.30 0.008 0.010 0.012 d 5.00 5.13 5.25 0.197 0.202 0.207 d1 4.80 4.90 5.00 0.189 0.193 0.197 d2 3.86 3.96 4.06 0.152 0.156 0.160 d3 1.63 1.73 1.83 0.064 0.068 0.072 e 1.27 bsc 0.050 bsc e 6.05 6.15 6.25 0.238 0.242 0.246 e1 4.27 4.37 4.47 0.168 0.172 0.176 e2 (for al product) 2.75 2.85 2.95 0.108 0.112 0.116 e2 (for other product) 3.18 3.28 3.38 0.125 0.129 0.133 f - - 0.15 - - 0.006 l 0.62 0.72 0.82 0.024 0.028 0.032 l1 0.92 1.07 1.22 0.036 0.042 0.048 k 0.51 0.020 w 0.23 0.009 w1 0.41 0.016 w2 2.82 0.111 w3 2.96 0.117 ? 0 - 10 0 - 10 ecn: c12-0026-rev. b, 27-aug-12 dwg: 5976
pad pattern www.vishay.com vishay siliconix revision: 07-feb-12 1 document number: 63818 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 recommended minimum pad for powerpak ? so-8l single recommended mi nimum pad s dimen s ion s in mm (inche s ) 5.000 (0.197) 2.310 (0.091) 0.510 (0.020) 0.595 (0.023) 4.061 (0.160) 3.630 (0.143) 0.410 (0.016) 0.710 (0.028) 0.610 (0.024) 2.715 (0.107) 1.270 (0.050) 1.905 (0.075) 0.860 (0.034) 0.820 (0.032) 7.250 (0.285) 8.250 (0.325) 6.250 (0.246) 1.291 (0.051)
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