ACE4826B dual n - channel enhancement mode mosfet ver 1. 2 1 description this n - channel enhancement mode power fets are produced with high cell density, dmos trench technology, which is especially used to minimize on - state resistance. this device is suitable for use as a load switch , power management in pwm control led dc/dc converter and push - pull dc/ac inverter systems. features ? v ds 60v, v gs 20v, i d 5.5a ? r ds(on ) @10v, 30 m (typ.) ? r ds(on ) @4.5v, 35 m (typ.) absolute maximum ratings parameter symbol max unit drain - source voltage v dss 6 0 v gate - source voltage v gss 20 v drain current - continuous i d 5.5 a total power dissipation ( n ote1,2) p d 1 w operating and storage jun ction temperature range t j /t stg - 55/150 o c note: 1. surface mounted on 1in pad area, t 10sec. 2. rating for a single chip. packaging type sop - 8
ACE4826B dual n - channel enhancement mode mosfet ver 1.2 2 ordering i nformation ACE4826B xx + h electrical characteristics t a =25 , unless otherwise noted . parameter symbol conditions min. typ. max. unit off characteristics drain - source breakdown voltage v (br)dss v gs =0v, i d =250 ua 6 0 v gate leakage current i gss v ds =0v,v gs = 20 v 100 ua zero gate voltage drain current i dss v ds = 6 0 v, v gs =0v 1 ua on characteristics gate threshold voltage v gs(th) v d s =v gs , i d s =250ua 1 1.4 3 v drain - source on - resistance r ds(on) v gs = 10 v, i d = 5.5 a 30 41 m v gs = 4 .5 v, i d = 4.5 a 35 52 d rain - s ource d iode c haracteristics a nd m aximum r atings diode for ward voltage v sd i s = 2 a, v gs =0v 0.5 0.77 1 v switching characteristics turn - on time td(on) v gs = 10 v, r l = 5.4 , v ds = 30 v, r g en = 3 , i d =5.5a 15 ns tr 20 turn - off time td(off) 40 tf 15 dynamic characteristics input capacitance ciss v gs =0v, v ds =10v, f=1mhz 1180 pf output capacitance coss 170 reverse transfer capacitance crss 100 fm : sop - 8 pb - free halogen - free
ACE4826B dual n - channel enhancement mode mosfet ver 1.2 3 typical performance characteristics
ACE4826B dual n - channel enhancement mode mosfet ver 1.2 4 typical performance characteristics
ACE4826B dual n - channel enhancement mode mosfet ver 1.2 5 packing information sop - 8
ACE4826B dual n - channel enhancement mode mosfet ver 1.2 6 notes ace does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ace electronics co., ltd. as sued herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety o r effectiveness. ace technology co., ltd. http://www.ace - ele.com/
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