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sup/sub85n04-03 vishay siliconix new product document number: 71124 s-00654erev. b, 27-mar-00 www.vishay.com faxback 408-970-5600 2-1 n-channel 40-v (d-s) 175 c mosfet
v (br)dss (v) r ds(on) ( ) i d (a) 40 0.0035 @ v gs = 10 v 85 a 40 0.0053 @ v gs = 4.5 v 85 a d g s n-channel mosfet to-220ab top view gds drain connected to tab to-263 s d g top view sup85n04-03 sub85n04-03
parameter symbol limit unit drain-source voltage v ds 40 gate-source voltage v gs 20 v continuous drain current ( t j = 175 c ) t c = 25 c i d 85 a a continuous drain current (t j = 175 c) t c = 125 c i d 85 a a pulsed drain current i dm 240 a avalanche current i ar 75 repetitive avalanche energy b l = 0.1 mh e ar 280 mj maximum power dissipation b t c = 25 c (to-220ab and to-263) p d 250 c w maximum power dissipation b t a = 25 c (to-263) d p d 3.75 w operating junction and storage temperature range t j , t stg 55 to 175 c parameter symbol limit unit junction - to - ambient pcb mount (to-263) d r thja 40 c/w j unc ti on- t o- a m bi en t free air (to-220ab) r thja 62.5 c/w junction-to-case r thjc 0.6 notes a. package limited. b. duty cycle 1%. c. see soa curve for voltage derating. d. when mounted on 1o square pcb (fr-4 material).
sup/sub85n04-03 vishay siliconix new product www.vishay.com faxback 408-970-5600 2-2 document number: 71124 s-00654erev. b, 27-mar-00

parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v ds = 0 v, i d = 250 a 40 v gate-threshold voltage v gs(th) v ds = v gs , i d = 250 a 1 3 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zgvl dic i v ds = 40 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 40 v, v gs = 0 v, t j = 125 c 50 a v ds = 40 v, v gs = 0 v, t j = 175 c 250 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 120 a dis os r i a v gs = 10 v, i d = 30 a 0.0029 0.0035 drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 20 a 0.0044 0.0053 drain - source on - state resistance a r ds( on ) v gs = 10 v, i d = 30 a, t j = 125 c 0.0053 v gs = 10 v, i d = 30 a, t j = 175 c 0.0063 forward transconductance a g fs v ds = 15 v, i d = 30 a 30 s dynamic b input capacitance c iss f 6860 f output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1320 pf reverse transfer capacitance c rss 800 total gate charge c q g v30vv10vi85a 165 250 c gate-source charge c q gs v ds = 30 v, v gs = 10 v, i d = 85 a 25 nc gate-drain charge c q gd 55 turn-on delay time c t d(on) v30vr035 15 25 rise time c t r v dd = 30 v, r l = 0.35 i 85a v 10v r 25 90 135 ns turn-off delay time c t d(off) dd , l i d 85 a, v gen = 10 v, r g = 2.5 95 145 ns fall time c t f 125 195 source-drain diode ratings and characteristics (t c = 25 c) b continuous current i s 85 a pulsed current i sm 240 a forward voltage a v sd i f = 85 a, v gs = 0 v 1.1 1.4 v reverse recovery time t rr i 85 a di/dt 100 a/ s 60 90 ns peak reverse recovery current i rm(rec) i f = 85 a, di/dt = 100 a/ s 2.6 4 a reverse recovery charge q rr 0.08 0.15 c notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. c. independent of operating temperature.
sup/sub85n04-03 vishay siliconix new product document number: 71124 s-00654erev. b, 27-mar-00 www.vishay.com faxback 408-970-5600 2-3
0 2000 4000 6000 8000 10000 12000 0 8 16 24 32 40 0 4 8 12 16 20 0 60 120 180 240 300 0 40 80 120 160 200 0 20406080100 0 0.002 0.004 0.006 0.008 0 20406080100120 0 50 100 150 200 250 0123456 0 50 100 150 200 250 0246810 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds drain-to-source voltage (v) v gs gate-to-source voltage (v) drain current (a) i d gate-to-source voltage (v) q g total gate charge (nc) i d drain current (a) v ds drain-to-source voltage (v) c capacitance (pf) v gs transconductance (s) g fs 25 c 55 c 3 v t c = 125 c v ds = 30 v i d = 85 a v gs = 10 thru 6 v v gs = 10 v c iss c oss t c = 55 c 25 c 125 c 4 v v gs = 4.5 v on-resistance ( r ds(on) ) drain current (a) i d c rss i d drain current (a) 5 v
sup/sub85n04-03 vishay siliconix new product www.vishay.com faxback 408-970-5600 2-4 document number: 71124 s-00654erev. b, 27-mar-00
drain source breakdown vs. junction temperature avalanche current vs. time 0 0.4 0.8 1.2 1.6 50 25 0 25 50 75 100 125 150 175 on-resistance vs. junction temperature source-drain diode forward voltage t j junction temperature ( c) v sd source-to-drain voltage (v) source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 v gs = 10 v i d = 30 a t j = 25 c t j = 150 c (normalized) on-resistance ( r ds(on) ) 0 30 36 42 48 54 60 50 25 0 25 50 75 100 125 150 175 t j junction temperature ( c) t in (sec) 1000 10 0.00001 0.001 0.1 1 0.1 (a) i dav 0.01 i av (a) @ t a = 150 c (v) v (br)dss i d = 250 a 100 1 i av (a) @ t a = 25 c 0.0001
sup/sub85n04-03 vishay siliconix new product document number: 71124 s-00654erev. b, 27-mar-00 www.vishay.com faxback 408-970-5600 2-5

0 20 40 60 80 100 0 25 50 75 100 125 150 175 safe operating area v ds drain-to-source voltage (v) 1000 10 0.1 1 10 100 limited by r ds(on) 0.1 100 t c = 25 c single pulse maximum avalanche and drain current vs. case temperature t c ambient temperature ( c) drain current (a) i d normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 4 10 3 10 2 10 1 1 normalized effective transient thermal impedance 10 0.2 0.1 duty cycle = 0.5 drain current (a) i d 1 ms 10 ms 100 ms dc 10 s 100 s single pulse 0.05 0.02 1
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.

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