cma 30 e 1600 pn advanced v = v a2s a2s a2s a2s standard scr symbol definition r a t i n g s features / advantages: typ. max. i r/d v i a v t 1.45 r 2.50 k/w r 2 1 3 min. 30 applications: v rsm/dsm v 1700 10 t = 25c vj t = c vj ma 2 package: part number v = v r t = 25c vj i = a f v t = c c 40 p tot 50 w t = 25c c t vj 150 c -40 v i rrm = = 1600 47 30 cma 30 e 1600 pn v a 1600 max. non-repetitive reverse/forward blocking voltage reverse current, drain current forward voltage virtual junction temperature total power dissipation conditions unit 1.70 t = 25c vj 125 v t0 v 0.92 t = c vj 150 r t 18 m ? v 1.40 t = c vj i = a f v 30 1.65 i = a f 60 i = a f 60 threshold voltage slope resistance for power loss calculation only backside: isolated = 30 a housing: single thyristor to-220fp r electrical isolation thyristor for line frequency planar passivated chip long-term stability of blocking currents and voltages motor control power converter ac power controller switch mode and resonant mode power supplies light and temperature control 125 v rrm/drm v 1600 max. repetitive reverse/forward blocking voltage t = 25c vj i t(rms) a 180 sine 47 rms forward current p gm w t = 30 s 10 max. gate power dissipation p t = c c 150 w t = 300 s 5 p p gav w 0.5 average gate power dissipation c j 9 j unction capacitance v = v 400 t = 25c f = 1 mhz r vj pf i fsm t = 10 ms; (50 hz), sine t = c vj 45 max. forward surge current t = c vj 150 i2t t = c 45 value for fusing t = c 150 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r thjc thermal resistance junction to case t(av)m max. average forward current t = c vj 150 t(rms) i t(av)m 260 280 240 240 a a a a 220 240 340 325 1600 ixys reserves the right to change limits, conditions and dimensions. 20080508b data according to iec 60747and per diode unless otherwise specified ? 2008 ixys all rights reserved
cma 30 e 1600 pn advanced (di/dt) cr a/ s 150 repetitive, i = t vj = 125c critical rate of rise of current v gt gate trigger voltage v= 6 v t = c 25 (dv/dt) t = 125 c critical rate of rise of voltage a/ s 500 v/ s f = 50 hz; t = 200 s ia; v = ? v r = ; method 1 (linear voltage rise) vj d vj symbol definition ratings typ. max. min. conditions uni t 40 a t p g = 0.2 di /dt a/s g =0.2 d drm cr v = ? v d drm gk 500 1.3 v t= c -40 vj i gt gate trigger current v= 6 v t = c 25 d vj 28 m a t= c -40 vj 1.6 v 50 m a v gd gate non-trigger voltage t= c vj 0.2 v i gd gate non-trigger current 1m a v = ? v d drm 125 latching current t= c vj 90 m a i l 25 ts p =10 ia; g = 0.2 di /dt a/s g =0.2 holding current t= c vj 80 m a i h 25 v= 6 v d r = gk gate controlled delay time t= c vj 2 s t gd 25 ia; g = 0.5 di /dt a/s g =0.5 v = ? v r drm turn-off time t= c vj 150 s t q 25 di/dt = a/s; 10 dv/dt = v/s 20 v = r 100 v; i a t =22 v = ? v d drm t s p = 200 non-repetitive, i = 22 a t ; ixys reserves the right to change limits, conditions and dimensions. 20080508b data according to iec 60747and per diode unless otherwise specified ? 2008 ixys all rights reserved
cma 30 e 1600 pn advanced i rms a per pin 35 r thch k/w 0.50 m d nm 0.6 mounting torque 0.4 t stg c 150 storage temperature -55 weight g 2 symbol definition ratings typ. max. min. conditions rms current thermal resistance case to heatsink unit i is typically limited by: 1. pin-to-chip re sistance; or by 2. current capability of the chip. in case of 1, a common cathode/anode configuration and a non-isol ated backside, the whole current capability can be used by con necting the backside. f c n 60 mounting force with clip 20 ordering delivering mode base qty code key standard part name cma 30 e 1600 pn 505254 tube 50 xxxxxx yyww logo marking on product datecode assembly code abcdef product marking c m a 30 e 1600 pn thyristor (scr) standard scr (up to 1800v) single thyristor to-220abfp (3) = = = cma30e1600pb cs22-12io1m cla30e1200pb cs29-12io1c to-220ab (3) to-220abfp (3) to-220ab (3) isoplus220ab (3) similar part package 1) 1 ) marking on product CMA30E1600PN 1600 1200 1200 1200 voltage class current rating [a] reverse voltage [v] = = = = rms cla30e1200pc cla30e1200hb cs22-08io1m cs29-08io1c to-263ab (d2pak) to-247ad (3) to-220abfp (3) isoplus220ab (3) 1200 1200 800 800 v isol v 2500 t = 1 second v 2000 t = 1 minute isolation voltage d s mm 1.07 mm 1.07 creapage distance on surface d a striking distance through air part number ixys reserves the right to change limits, conditions and dimensions. 20080508b data according to iec 60747and per diode unless otherwise specified ? 2008 ixys all rights reserved
cma 30 e 1600 pn advanced ? p a a1 h a2 q l1 d e l b b1 c e outlines to-220fp ixys reserves the right to change limits, conditions and dimensions. 20080508b data according to iec 60747and per diode unless otherwise specified ? 2008 ixys all rights reserved
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