? 2009 ixys corporation, all rights reserved features z international standard packages z high blocking voltage z high current handling capability z anti-parallel diode advantages z high power density z low gate drive requirement z intergrated diode can be used for protection applications z capacitor discharge z ac switches z switch-mode and resonant-mode power supplies z ups z ac motor drives ds100167a(10/09) bimosfet tm monolithic bipolar mos transistor ixbk75n170 IXBX75N170 v ces = 1700v i c110 = 75a v ce(sat) 3.1v symbol test conditions maximum ratings v ces t j = 25c to 150c 1700 v v cgr t j = 25c to 150c, r ge = 1m 1700 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c (chip capabilitty) 200 a i lrms t c = 25c (lead rms limit) 160 a i c110 t c = 110c 75 a i cm t c = 25c, 1ms 580 a ssoa v ge = 15v, t vj = 125c, r g = 1 i cm = 150 a (rbsoa) clamped inductive load v ce < 0.8 ? v ces p c t c = 25c 1040 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062 in.) from case for 10 260 c m d mounting torque (to-264 ) 1.13/10 nm/lb.in. f c mounting force (plus247 ) 20..120/4.5..27 n/lb. weight to-264 10 g plus247 6 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 1700 v v ge(th) i c = 1.5ma, v ce = v ge 2.5 5.5 v i ces v ce = 0.8 ? v ces , v ge = 0v 25 a t j = 125 c 2 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = i c110 , v ge = 15v, note 1 2.6 3.1 v t j = 125 c 3.1 v preliminary technical information g = gate c = collector e = emitter tab = collector plus247 tm (ixbx) to-264 (ixbk) g c e g c e tab tab
ixbk75n170 IXBX75N170 ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = i c110 , v ce = 10v, note 1 34 56 s c ies 6930 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 400 pf c res 150 pf q g 350 nc q ge i c = i c110 , v ge = 15v, v ce = 0.5 ? v ces 50 nc q gc 160 nc t d(on) 46 ns t r 160 ns t d(off) 260 ns t f 440 ns t d(on) 47 ns t r 230 ns t d(off) 260 ns t f 580 ns r thjc 0.12 c/w r thcs 0.15 c/w note 1. pulse test, t 300 s, duty cycle, d 2%. additional provisions for lead-to-lead isolation are required at v ce >1200v. terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) plus247 tm (ixbx) outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 reverse diode symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max v f i f = i c110 , v ge = 0v, note 1 3.0 v t rr 1.5 s i rm 50 a q rm 38.2 c i f = 37a, v ge = 0v, -di f /dt = 100a/ s v r = 100v, v ge = 0v resistive load, t j = 25c i c = i c110 , v ge = 15v r g = 1 , v ce = 0.5 ? v ces resistive load, t j = 125c i c = i c110 , v ge = 15v r g = 1 , v ce = 0.5 ? v ces to-264 aa ( ixbk) outline dim. millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2009 ixys corporation, all rights reserved ixbk75n170 IXBX75N170 ixys ref: b_75n170(8t)7-01-09 fig. 1. output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v ce - volts i c - amperes v ge = 25v 19v 15v 13v 11v 9v 7v fig. 2. extended output characteristics @ 25oc 0 40 80 120 160 200 240 280 320 0 2 4 6 8 10 12 14 16 18 v ce - volts i c - amperes v ge = 25v 17v 15v 13v 11v 7v 9v fig. 3. output characteristics @ 125oc 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v ce - volts i c - amperes v ge = 25v 19v 15v 13v 11v 9v 7v 5v fig. 4. dependence of v ce(sat) on junction temperature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 150a i c = 75a i c = 37.5a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5 7 9 11 13 15 17 19 21 23 25 v ge - volts v ce - volts i c = 150a t j = 25oc 37.5a 75a fig. 6. input admittance 0 20 40 60 80 100 120 140 160 180 200 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 v ge - volts i c - amperes t j = 125oc 25oc - 40oc
ixbk75n170 IXBX75N170 ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. transconductance 0 10 20 30 40 50 60 70 80 90 0 20 40 60 80 100 120 140 160 180 200 220 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. gate charge 0 2 4 6 8 10 12 14 16 0 40 80 120 160 200 240 280 320 360 q g - nanocoulombs v ge - volts v ce = 850v i c = 75a i g = 10ma fig. 11. reverse-bias safe operating area 0 20 40 60 80 100 120 140 160 200 400 600 800 1000 1200 1400 1600 1800 v ce - volts i c - amperes t j = 125oc r g = 1 ? dv / dt < 10v / ns fig. 10. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res fig. 12. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 8. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 v f - volts i f - amperes t j = 125oc t j = 25oc
? 2009 ixys corporation, all rights reserved ixbk75n170 IXBX75N170 fig. 14. resistive turn-on rise time vs. collector current 0 50 100 150 200 250 300 350 400 450 30 40 50 60 70 80 90 100 110 120 130 140 150 i c - amperes t r - nanoseconds t j = 125oc t j = 25oc r g = 1 ? , v ge = 15v v ce = 850v fig. 15. resistive turn-on switching times vs. gate resistance 100 200 300 400 500 600 700 800 12345678910 r g - ohms t r - nanoseconds 45 50 55 60 65 70 75 80 t d ( on ) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 850v i c = 150a i c = 75a fig. 16. resistive turn-off switching times vs. junction temperature 100 200 300 400 500 600 700 800 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 180 200 220 240 260 280 300 320 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v ge = 15v v ce = 850v i c = 75a i c = 150a fig. 17. resistive turn-off switching times vs. collector current 100 200 300 400 500 600 700 800 900 1000 30 40 50 60 70 80 90 100 110 120 130 140 150 i c - amperes t f - nanoseconds 160 180 200 220 240 260 280 300 320 340 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v ge = 15v v ce = 850v t j = 125oc, 25oc fig. 13. resistive turn-on rise time vs. junction temperature 120 160 200 240 280 320 360 400 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 1 ? , v ge = 15v v ce = 850v i c = 150a i c = 75a fig. 18. resistive turn-off switching times vs. gate resistance 0 100 200 300 400 500 600 700 800 900 12345678910 r g - ohms t f i - nanoseconds 160 200 240 280 320 360 400 440 480 520 t d ( off ) - nanoseconds t f t d(off ) - - - - t j = 125oc, v ge = 15v v ce = 850v i c = 150a i c = 75a ixys ref: b_75n170(8t)7-01-09
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