type bss131 sipmos ? small-signal-transistor feature ? n-channel ? enhancement mode ? logic level ? d v /d t rated ? pb-free lead-plating; rohs compliant ? qualified according to aec q101 ? halogen-free according to iec61249-2-21 parameter symbol conditions unit value v ds 240 v r ds(on),max 14 i d 0.1 a product summary pg-sot-23 type package pb-free tape and reel information marking bss131 pg-sot23 yes h6327 srs rev. 2.6 page 1 2012-03-29 continuous drain current i d t a =25 c 0.11 a t a =70 c 0.09 pulsed drain current i d,pulse t a =25 c 0.4 reverse diode d v /d t d v /d t i d =0.1 a, v ds =192 v, d i /d t =200 a/s, t j,max =150 c 6 kv/s gate source voltage v gs 20 v esd class jesd22-a114-hbm class 0 power dissipation p tot t a =25 c 0.36 w operating and storage temperature t j , t stg -55 ... 150 c iec climatic category; din iec 68-1 55/150/56 rev. 2.6 page 1 2012-03-29
bss131 parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - minimal footprint r thja - - 350 k/w electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =250 a 240 - - v gate threshold voltage v gs(th) v ds =0 v, i d =56 a 0.8 1.4 1.8 drain-source leakage current i d (off) v ds =240 v, v gs =0 v, t j =25 c - - 0.01 a v ds =240 v, v gs =0 v, t j =150 c --5 gate-source leakage current i gss v gs =20 v, v ds =0 v - - 10 na values rev. 2.6 page 2 2012-03-29 drain-source on-state resistance r ds(on) v gs =4.5 v, i d =0.09 a - 9.07 20 v gs =10 v, i d =0.1 a - 7.7 14 transconductance g fs | v ds |>2| i d | r ds(on)max , i d =0.08 a 0.06 0.13 - s rev. 2.6 page 2 2012-03-29
bss131 parameter symbol conditions unit min. typ. max. d y namic characteristics input capacitance c iss -5877pf output capacitance c oss - 7.3 10 reverse transfer capacitance c rss - 2.8 4.2 turn-on delay time t d(on) - 3.3 5.0 ns rise time t r - 3.1 4.6 turn-off delay time t d(off) - 13.7 20 fall time t f - 64.5 97 gate charge characteristics gate to source charge q gs - 0.16 0.22 nc gate to drain charge q gd - 0.8 1.2 gate charge total q g - 2.1 3.1 gate plateau voltage v plateau - 2.90 - v values v gs =0 v, v ds =25 v, f =1 mhz v dd =120 v, v gs =10 v, i d =0.1 a, r g =6 v dd =192 v, i d =0.1 a, v gs =0 to 10 v rev. 2.6 page 3 2012-03-29 reverse diode diode continous forward current i s - - 0.11 a diode pulse current i s,pulse - - 0.43 diode forward voltage v sd v gs =0 v, i f =0.1 a, t j =25 c - 0.81 1.2 v reverse recovery time t rr - 42.9 64.3 ns reverse recovery charge q rr - 22.6 34 nc v r =120 v, i f =0.1 a, d i f /d t =100 a/s t a =25 c rev. 2.6 page 3 2012-03-29
bss131 1 power dissipation 2 drain current p tot =f( t a ) i d =f( t a ); v gs 10 v 0 0.1 0.2 0.3 0.4 0 40 80 120 160 p tot [w] t a [c] 0 0.02 0.04 0.06 0.08 0.1 0.12 0 40 80 120 160 i d [a] t a [c] rev. 2.6 page 4 2012-03-29 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t a =25 c; d =0 z thja =f( t p ) parameter: t p parameter: d = t p / t 100 ms 30 s 100 s 1 ms 10 ms dc 10 -3 10 -2 10 -1 10 0 1 10 100 1000 i d [a] v ds [v] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 0 10 1 10 2 10 3 z thja [k/w] t p [s] 0 0.1 0.2 0.3 0.4 0 40 80 120 160 p tot [w] t a [c] 0 0.02 0.04 0.06 0.08 0.1 0.12 0 40 80 120 160 i d [a] t a [c] rev. 2.6 page 4 2012-03-29
bss131 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 2.3 v 2.7 v 3.3 v 3.9 v 4.5 v 5 v 7 v 10 v 5 7 9 11 13 15 17 19 21 23 25 0 0.1 0.2 0.3 0.4 r ds(on) [ ] i d [a] 2.3 v 2.7 v 3.3 v 3.9 v 4.5 v 5 v 7 v 10 v 0 0.1 0.2 0.3 0.4 01234567 i d [a] v ds [v] rev. 2.6 page 5 2012-03-29 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c 2.3 v 2.7 v 3.3 v 3.9 v 4.5 v 5 v 7 v 10 v 5 7 9 11 13 15 17 19 21 23 25 0 0.1 0.2 0.3 0.4 r ds(on) [ ] i d [a] 0 0.1 0.2 0.3 0.4 01234 i d [a] v gs [v] 0 0.05 0.1 0.15 0.2 0.25 0.3 0.0 0.1 0.2 0.3 0.4 g fs [s] i d [a] 2.3 v 2.7 v 3.3 v 3.9 v 4.5 v 5 v 7 v 10 v 0 0.1 0.2 0.3 0.4 01234567 i d [a] v ds [v] rev. 2.6 page 5 2012-03-29
bss131 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =0.1 a; v gs =10 v v gs(th) =f( t j ); v ds =v gs ; i d =56 a parameter: i d typ 98 % 0 10 20 30 40 50 -60 -20 20 60 100 140 r ds(on) [ ] t j [c] typ 98 % 2 % 0 0.4 0.8 1.2 1.6 2 2.4 -60 -20 20 60 100 140 v gs(th) [v] t j [c] rev. 2.6 page 6 2012-03-29 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz; t j =25c i f =f( v sd ) parameter: t j typ 98 % 0 10 20 30 40 50 -60 -20 20 60 100 140 r ds(on) [ ] t j [c] typ 98 % 2 % 0 0.4 0.8 1.2 1.6 2 2.4 -60 -20 20 60 100 140 v gs(th) [v] t j [c] ciss coss crss 10 0 10 1 10 2 10 3 0 102030 c [pf] v ds [v] 25 c 150 c 25 c, 98% 150 c, 98% 10 -3 10 -2 10 -1 10 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 i f [a] v sd [v] rev. 2.6 page 6 2012-03-29
bss131 13 typ. gate charge 14 drain-source breakdown voltage v gs =f( q gate ); i d =0.1 a pulsed v br(dss) =f( t j ); i d =250 a parameter: v dd 200 210 220 230 240 250 260 270 280 290 300 -60 -20 20 60 100 140 v br(dss) [v] t j [c] 48 v 120v 192 v 0 2 4 6 8 10 12 00.511.522.5 v gs [v] q gate [nc] rev. 2.6 page 7 2012-03-29 200 210 220 230 240 250 260 270 280 290 300 -60 -20 20 60 100 140 v br(dss) [v] t j [c] 48 v 120v 192 v 0 2 4 6 8 10 12 00.511.522.5 v gs [v] q gate [nc] rev. 2.6 page 7 2012-03-29
bss131 packa g e outline: footprint: packaging: rev. 2.6 page 8 2012-03-29 rev. 2.6 page 8 2012-03-29
bss131 published by infineon technologies ag 81726 munich, germany ? 2010 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office (www.infineon.com). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 2.6 page 9 2012-03-29 published by infineon technologies ag 81726 munich, germany ? 2010 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office (www.infineon.com). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 2.6 page 9 2012-03-29
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