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| inchange semiconductor isc product specification isc silicon npn power transistor 2SC3412 description collector-emitter breakdown voltage- : v (br)ceo = 500v (min) high power dissipation applications designed for tv horizontal defle ction output applications. absolute maximum ratings(t a =25 ) symbol parameter max unit v cbo collector-base voltage 1300 v v ceo collector-emitter voltage 500 v v ebo emitter-base voltage 6 v i c collector current-continuous 8 a i cm collector current-peak 10 a p c collector power dissipation @t c =25 50 w t j junction temperature 150 t stg storage temperature range -45~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC3412 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 10ma; r be = 500 v v (br)ebo emitter-base breakdown voltage i e = 10ma; i c = 0 6 v v ce (sat) collector-emitter saturation voltage i c = 5a; i b = 1a b 5.0 v v be (sat) base-emitter saturation voltage i c = 5a; i b = 1a b 1.5 v i ces collector cutoff current v ce = 1300v; r be = 0 0.5 ma switching times t stg storage time 3 s t f fall time i c = 5a; i b1 = 1a 0.2 s isc website www.iscsemi.cn |
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