VS-10BQ060-M3 www.vishay.com vishay semiconductors revision: 29-may-12 1 document number: 93357 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 schottky rectifier, 1.0 a features ? low forward voltage drop ? guard ring for enhanced ruggedness and long term reliability ? small foot print, surface mountable ? high frequency operation ? meets msl level 1, per j-st d-020, lf maximum peak of 260 c ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 description the VS-10BQ060-M3 surface mount schottky rectifier has been designed for applicatio ns requiring low forward drop and very small foot prints on pc boards. typical applications are in disk dr ives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. product summary package smb i f(av) 1.0 a v r 60 v v f at i f 0.42 v i rm 8 ma at 125 c t j max. 150 c diode variation single die e as 2.0 mj cathode anode major ratings and characteristics symbol characteristics values units i f(av) rectangular waveform 1.0 a v rrm 60 v i fsm t p = 5 s sine 700 a v f 1.0 apk, t j = 125 c 0.42 v t j range - 55 to 150 c voltage ratings parameter symbol VS-10BQ060-M3 units maximum dc reverse voltage v r 60 v maximum working peak reverse voltage v rwm absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) 50 % duty cycle at t l = 116 c, rectangular waveform 1.0 a maximum peak one cycle non-repetitive surge current i fsm 5 s sine or 3 s rect. pulse following any rated load condition and with rated v rrm applied 700 a 10 ms sine or 6 ms rect. pulse 42 non-repetitive avalanche energy e as t j = 25 c, i as = 1 a, l = 4 mh 2.0 mj repetitive avalanche current i ar current decaying linear ly to zero in 1 s frequency limited by t j maximum v a = 1.5 x v r typical 1.0 a
VS-10BQ060-M3 www.vishay.com vishay semiconductors revision: 29-may-12 2 document number: 93357 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) pulse width = 300 s, duty cycle = 2 % notes (1) thermal runaway co ndition for a diode on its own heatsink (2) mounted 1" square pcb electrical specifications parameter symbol test conditions values units maximum forward voltage drop see fig. 1 v fm (1) 1 a t j = 25 c 0.49 v 2 a 0.60 1 a t j = 125 c 0.42 2 a 0.56 maximum reverse leakage current see fig. 2 i rm t j = 25 c v r = rated v r 0.1 ma t j = 125 c 8.0 typical junction capacitance c t v r = 5 v dc (test signal range 100 khz to 1 mhz), 25 c 80 pf typical series inductance l s measured lead to lead 5 mm from package body 2.0 nh maximum voltage rate of charge dv/dt rated v r 10 000 v/s thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j (1) , t stg - 55 to 150 c maximum thermal resistance, junction to lead r thjl (2) dc operation 36 c/w maximum thermal resistance, junction to ambient r thja 80 approximate weight 0.10 g 0.003 oz. marking device case style smb (similar do-214aa) 1h dp tot dt j ------------- 1 r thja -------------- <
VS-10BQ060-M3 www.vishay.com vishay semiconductors revision: 29-may-12 3 document number: 93357 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - maximum forward voltage drop characteristics fig. 2 - typical peak reverse current vs. reverse voltage fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics (per leg) v fm - forward voltage drop (v) i f - instantaneous forward current (a) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 1 10 t j = 25 c t j = 125 c t j = 150 c v r - reverse voltage (v) i r - reverse current (ma) 0 10 20 30 40 50 60 0.00010 0.0010 0.010 0.10 1.0 10 100 25 c 125 c 150 c 100 c 75 c 50 c 100 v r - reverse voltage (v) c t - junction capacitance (pf) 0 10 60 10 20 40 50 30 z thjc - thermal impedance (c/w) t 1 - rectangular pulse duration (s) 0.1 1 10 1 00 0.00001 0.0001 0.001 0.01 0.1 1 10 100 s ingle pul s e (thermal re s i s tance) d = 0.75 d = 0.50 d = 0.33 d = 0.25 d = 0.20 2 t 1 t p dm note s : 1. duty factor d = t 1 / t 2 . 2. peak t j = p dm x z thjc + t c .
VS-10BQ060-M3 www.vishay.com vishay semiconductors revision: 29-may-12 4 document number: 93357 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum average forward current vs. allowable lead temperature fig. 6 - maximum average forward dissipation vs. average forward current fig. 7 - maximum peak surge forward current vs. pulse duration note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 80 % rated v r i f(av) - average forward current (a) allowable case temperature (c) 0.0 0.3 0.6 0.9 1.2 1.5 50 60 70 80 90 100 110 120 130 140 150 160 dc sq uare wave (d = 0.50) 80 % rated v r applied s ee note (1) d = 0.75 d = 0.20 d = 0.25 d = 0.33 d = 0.50 i f(av) - average forward current (a) average power loss (w) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 0.2 0.4 0.6 0.8 dc limit rm s d = 0.75 d = 0.20 d = 0.25 d = 0.33 d = 0.50 t p - square wave pulse duration (s) 100 1000 i fsm - non-repetitive surge current (a) 10 100 1000 10 000 10 at any rated load condition and with rated v rrm applied following surge
VS-10BQ060-M3 www.vishay.com vishay semiconductors revision: 29-may-12 5 document number: 93357 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n preferred package code mini mum order quantity packaging description VS-10BQ060-M3/5bt 5bt 3200 13" diam eter plastic tape and reel links to related documents dimensions www.vishay.com/doc?95401 part marking information www.vishay.com/doc?95403 packaging information www.vishay.com/doc?95404 2 - current rating 3 - b = smb 4 - q = schottky ?q? series 5 - voltage rating (060 = 60 v) 1 - vishay semiconductors product device code 5 1 3 2 4 6 vs- 10 b q 060 -m3 - environmental digit: -m3 = halogen-free, rohs compliant and terminations lead (pb)-free 6
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