smd type ic www.kexin.com.cn 1 smd type ic p-channel 20-v (d-s) mosfet KI5447DC features absolute maximum ratings ta = 25 symbol 5 secs steady state unit v ds v gs t a =25 -4.8 -3.5 t a =85 -3.5 -2.5 i dm i s -2.1 -1.1 t a =25 2.5 1.3 t a =85 1.3 0.7 t j ,t stg symbol typ max unit t 5sec 43 50 steady-state 83 95 maximum junction-to-foot (drain) steady-state r thjf 14 20 * surface mounted on 1" x 1' fr4 board. drain-source voltage gate-source voltage operating junction and storage temperature range pulsed drain current continuous source current * continuous drain current (t j = 150 )* maximum power dissipation * v -55to150 parameter w -20 8 -15 parameter r thja /w a p d i d maximum junction-to-ambient* soldering recommendations (peak temperature) 260
www.kexin.com.cn 2 smd type ic smd type ic electrical characteristics ta = 25 parameter symbol testconditons min typ max unit gate threshold voltage v gs(th) v ds =v gs ,i d = -250 a -0.45 v gate-body leakage i gss v ds =0v,v gs = 8v 100 na v ds = -16v, v gs =0v -1 a v ds = -16v, v gs =0v,t j =85 -5 a on-state drain current* i d(on) v ds -5v,v gs =-4.5v -15 a v gs =-4.5v,i d = -3.5a 0.064 0.076 v gs =-2.5v,i d = -2.9a 0.091 0.110 v gs =-1.8v,i d = -1a 0.130 0.160 forward transconductance* g fs v ds =-10v,i d = -3.5a 9 s schottky diode forward voltage* v sd i s =-1.1a,v gs = 0 v -0.8 -1.2 v total gate charge q g 6.5 10 nc gate-source charge q gs v ds = -10v, v gs =-4.5v,i d = -3.5 a 1.4 nc gate-drain charge q gd 1.3 nc turn-on delay time t d(on) 14 21 ns rise time t r v dd =-10v,r l =10 29 45 ns turn-off delay time t d(off) i d =-1a,v gen = -4.5v, r g =6 42 65 ns fall time t f 35 55 ns source-drain reverse recovery time t rr i f = -1.1 a, di/dt = 100 a/ s 30 60 ns * pulse test; pulse width 300 s, duty cycle 2%. i dss zero gate voltage drain current r ds(on) drain-source on-state resistance* KI5447DC
|
