193 18 symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 15 20 41 50 r jc 2.1 3 w maximum junction-to-case b steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w maximum junction-to-ambient a steady-state c/w absolute maximum ratings t a =25c unless otherwise noted v v 20 gate-source voltage drain-source voltage 25 maximum units parameter pulsed drain current c power dissipation b t c =25c continuous drain current g t c =25c t c =100c repetitive avalanche energy l=0.1mh c i d 50 50 150 junction and storage temperature range a p d c 50 25 -55 to 175 t c =100c avalanche current c 30 45 a mj w t a =70c 2.1 power dissipation a t a =25c p dsm 3 aod456 n-channel enhancement mode field effect transistor features v ds (v) = 25v i d = 50a (v gs = 10v) r ds(on) <6 m ? (v gs = 10v) r ds(on) <10 m ? (v gs = 4.5v) general description the aod456 uses advanced trench technology and design to provide excellent r ds(on) with low gate charge. this device is suitable for use in pwm, load switching and general purpose applications. standard product aod456 is pb-free (meets rohs & sony 259 specifications). AOD456L is a green product ordering option. aod456 and AOD456L are electrically identical. g d s g d s t o-252 d-pak t op view drain connected to t ab alpha & omega semiconductor, ltd.
aod456 symbol min typ max units bv dss 25 v 1 t j =55c 5 i gss 100 na v gs(th) 1 1.74 3 v i d(on) 100 a 56 t j =125c 7.3 810 g fs 45 s v sd 0.74 1 v i s 50 a c iss 1850 2220 pf c oss 472 pf c rss 275 pf r g 0.86 1.5 ? q g (10v) 31.7 38 nc q g (4.5v) 15.7 19 nc q gs 5.8 nc q gd 8.2 nc t d(on) 7.5 ns t r 14 ns t d(off) 30 ns t f 11.5 ns t rr 30.9 37 ns q rr 20.3 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time drain-source breakdown voltage on state drain current i d =250ua, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =30a reverse transfer capacitance i f =20a, di/dt=100a/ s v gs =0v, v ds =12.5v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions r ds(on) i dss a gate threshold voltage v ds =v gs , i d =250 a v ds =20v, v gs =0v v ds =0v, v gs =20v zero gate voltage drain current gate-body leakage current m ? forward transconductance diode forward voltage static drain-source on-resistance i s =1a, v gs =0v v ds =5v, i d =20a v gs =4.5v, i d =20a gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =12.5v, i d =20a gate source charge gate drain charge total gate charge body diode reverse recovery charge i f =20a, di/dt=100a/ s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =12.5v, r l =0.625 ? , r gen =3 ? a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150c. the value in any given application depends on the user's specific board design, and the maximum temperature of 175c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c: repetitive rating, pulse width limited by junction temperature t j(max) =175c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsi nk, assuming a maximum junction temperature of t j(max) =175c. g. the maximum current rating is limited by bond-wires. h. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev3: august 2005 alpha & omega semiconductor, ltd.
aod456 typical electrical and thermal characteristic s 4.63 494 593 692 830 193 18 59 142 0 10 20 30 40 50 60 12345 v gs (volts) figure 2: transfer characteristics i d (a) 2 4 6 8 10 0 102030405060 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 0.00001 0.0001 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v, 20a v gs =4.5v, 20a 4 6 8 10 12 345678910 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =10v i d =20a 25c 125c 0 20 40 60 80 100 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3.5 5v 4.0v 10v 6v 4.5v v gs =4.5v alpha & omega semiconductor, ltd.
aod456 typical electrical and thermal characteristic s 4.63 494 593 692 830 193 18 59 142 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z jc normalized transient thermal resistance c oss c rss v ds =12.5v i d =20a single pulse d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =3c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175c t a =25c 0.1 1 10 100 1000 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 10 s 100 s 1ms dc r ds(on) limited t j(max) =175c, t a =25c alpha & omega semiconductor, ltd.
aod456 typical electrical and thermal characteristic s 4.63 494 593 692 830 193 18 59 142 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal impedance (note h) z ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =50c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 10 20 30 40 50 60 0.000001 0.00001 0.0001 0.001 time in avalanche, t a (s) figure 12: single pulse avalanche capability i d (a), peak avalanche current 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note b) power dissipation (w) 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note b) current rating i d (a) dd d a v bv i l t ? ? = t a =25c 0 10 20 30 40 50 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) t a =25c alpha & omega semiconductor, ltd.
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