 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| inchange semiconductor isc product specification isc silicon npn power transistor BUL216 description collector?emitter sustaining voltage : v ceo(sus) = 800v(min.) high switching speed applications designed for use in lighting applic ations and low cost switch- mode power supplies. absolute maximum ratings(t a =25 ) symbol parameter value unit v ces collector-emitter voltage 1600 v v ceo collector-emitter voltage 800 v v ebo emitter-base voltage 9 v i c collector current-continuous 4 a i cm collector current-peak t p <5ms 6 a i b b base current-continuous 2 a i bm base current-peak t p <5ms 4 a p c collector power dissipation t c =25 90 w t i junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.39 /w r th j-a thermal resistance,junction to ambient 62.5 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BUL216 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma; l= 25mh 800 v v (br)ebo emitter-base breakdown voltage i e = 10ma; i c = 0 9 v v ce (sat)-1 collector-emitter saturation voltage i c = 1a; i b = 0.2a b 1.0 v v ce (sat)-2 collector-emitter saturation voltage i c = 2a; i b = 0.66a b 3.0 v v be (sat)-1 base-emitter saturation voltage i c = 1a; i b = 0.2a b 1.2 v v be (sat)-2 base-emitter saturation voltage i c = 2a; i b = 0.66a b 1.2 v i ces collector cutoff current v ce = 1600v ; v be = 0 v ce = 1600v ; v be = 0, t c = 125 0.1 0.5 ma i ceo collector cutoff current v ce = 800v; i b = 0 0.25 ma h fe-1 dc current gain i c = 0.4a; v ce = 5v 12 40 h fe-2 dc current gain i c = 10ma; v ce = 5v 10 switching times, inductive load t s storage time 3.3 s t f fall time i c = 1.5a; v cl = 250v; l= 200 h; i b1 = 0.5a; v be(off) = -5v; r bb = 0 0.72 s isc website www.iscsemi.cn |
Price & Availability of BUL216
 |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |
