absolute maximum ratings (t a =25?c) collector-base voltage collector-emitter voltage emitter-base voltage symbol limits unit rating symbol parameter min typ max unit electrical characteristics(t a =25?cunless otherwise noted) collector-emitter breakdown voltage i c =-10ma, i b =0 collector-base breakdown voltage i c =-1ma, i e =0 emitter-base breakdown voltage i e =-1ma, i c =0 collector cuto? current v cb =-160v, i e =0 i cbo WTM649A t j p d weitron http://www .weitron.com.tw pnp epitaxial planar transistors -180 -160 -5 -1.5 -3 1 collector power dissipation i c(dc) i c(pulse) ? c ? c w storage temperature range t stg 150 -55 to +150 1 2 3 1. base 2. collector 3. emitter sot-89 collector current v cbo v ceo v ebo a v v v bv ebo bv ceo bv cbo -180 -160 -5 - - - - - -10 - - - v v v a junction temperature device marking WTM649A=649a 1/4 01-aug-05 lead(pb)- f r ee p b
weitron http://www.weitron.com.tw classification of h fe1 rank b c h fe1 60-120 100-200 WTM649A transition frequency v ce =-5v, i c =-150ma, f=100mhz output capacitance 1. pulse test: pulse width 380s, duty cycle 2% v cb =-10v, f=1mhz - 140 - mhz dynamic characteristics f t - 27 - pf c ob electrical characteristics (t a =25?c unless otherwise noted) characteristic symbol min typ max unit on characteristics (1) dc current gain v ce =-5v, i c =-150ma v ce =-5v, i c =-500ma collector-emitter saturation voltage i c =-600ma, i b =-50ma base-emitter saturation voltage v ce =-5v, i c =-150ma h fe1 h fe2 60 30 - - 200 - - v ce(sat) v be(on) - - -1 v - - -1.5 v 2/4 01-aug-05
weitron http://ww w .weitron.com.tw electrica l characteristic cu r ves WTM649A 1.2 fig.3 satueation v oltage & collecto r cur r ent v e g a t l o v n o i t a r u t a s r e t t i m e o t e s a b ) t a s ( e b ) v ( 1.0 l c =101 b t c =-25?c 0.8 0.6 0.4 0.2 0 1 3 10 30 100 300 1000 collecto r cur r ent i c (ma) 25?c 75?c v ce = -5v 350 fig.1 cur r ent gain & collecto r cur r ent h o i t a r r o t s i s n a r t t n e r r u c c d e f 300 250 200 150 100 50 0 -1 -10 -100 -1000 collecto r cur r ent i c (ma) t a =75?c -25?c 25?c -1.2 fig.2 satueation v oltage & collecto r cur r ent e g a t l o v n o i t a r u t a s r e t i m e o t r o t c e l l o c -1.0 -0.8 l c =101 b t a =-75?c -0.6 -0.4 -0.2 0 -1 -10 -100 -1000 collecto r cur r ent i c (ma) v ) t a s ( e c ) v ( 25?c -25?c fig. 4 gain bandwidth p r oduct & collecto r cur r ent v ce =5v t a =- 2 5?c 0 40 80 120 160 200 240 10 30 100 300 1000 collecto r cur r ent i c (ma) f t c u d o r p h t d i w d n a b n i a g t ) z h m ( fig.5 capacitance & collecto r to base v oltage c e c n a t i c a p a c t u p t u o r o t c e l l o c b o ) f p ( 2 5 10 20 50 100 200 -1 -3 -10 -30 -100 collecto r to base voltage v cb (v) f = 1 mhz i e = 0 fig.6 safe operating a r ea i t n e r r u c r o t c e l l o c c ) a ( -3 -1.0 -0.3 -0.1 -0.03 -0.01 -1 -3 -10 -30 -100 -300 collecto r to emitte r voltage v ce (v) i cmax dc operation (t c =25?c) (-13.3 v , -1.5a) (-40 v , -0.5a) (-160 v , -0.02a) 3/4 01-aug-05
weitron http://www.weitron.com.tw a b c d e g h j k l 1.400 0.320 0.360 0.350 4.400 1.400 2.300 3.940 2.900 max sot-89 sot-89 outline dimensions unit:mm b a h e j k g d c l 1.600 0.520 0.560 0.440 4.600 1.800 2.600 4.250 3.100 1.500typ WTM649A min dim 4/4 01-aug-05
|
