3HN04S no. a1014-1/4 features 4v drive. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss 30 v gate-to-source voltage v gss 20 v drain current (dc) i d 300 ma drain current (pulse) i dp pw 10 s, duty cycle 1% 1.2 a allowable power dissipation p d when mounted on glass epoxy substrate (145mm ? 80mm ? 1.6mm) 0.15 w channel temperature tch 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 30 v zero-gate voltage drain current i dss v ds =30v, v gs =0v 1 a gate-to-source leakage current i gss v gs = 16v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =100 a 1.2 2.6 v forward transfer admittance ? yfs ? v ds =10v, i d =150ma 170 290 ms static drain-to-source on-state resistance r ds (on)1 i d =150ma, v gs =10v 660 900 m r ds (on)2 i d =80ma, v gs =4v 1.5 2.2 input capacitance ciss v ds =10v, f=1mhz 22 pf output capacitance coss v ds =10v, f=1mhz 7.5 pf reverse transfer capacitance crss v ds =10v, f=1mhz 3.6 pf marking : yh continued on next page. tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : ena1014 11608pe ti im tc-00001098 specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. sanyo semiconductors data sheet 3HN04S n-channel silicon mosfet general-purpose switching device applications
3HN04S no. a1014-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit turn-on delay time t d (on) see specified test circuit. 14 ns rise time t r see specified test circuit. 17.5 ns turn-off delay time t d (off) see specified test circuit. 65 ns fall time t f see specified test circuit. 41 ns total gate charge qg v ds =10v, v gs =10v, i d =300ma 1.68 nc gate-to-source charge qgs v ds =10v, v gs =10v, i d =300ma 0.54 nc gate-to-drain ?iller?charge qgd v ds =10v, v gs =10v, i d =300ma 0.12 nc diode forward voltage v sd i s =300ma, v gs =0v 0.86 1.2 v package dimensions switching time test circuit unit : mm (typ) 7027-004 3 1 2 1.6 1.6 0.75 0.8 0.4 0.4 0.5 0.5 0.6 0.2 0.3 0.1 0 to 0.1 0.1 min 1 : gate 2 : source 3 : drain sanyo : smcp pw=10 s d.c. 1% p. g 50 g s d i d =300ma r l =50 rg v dd =15v v out 3HN04S v in 10v 0v v in rg=1.2k i d -- v ds i d -- v gs drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v r ds (on) -- v gs r ds (on) -- ta static drain-to-source on-state resistance, r ds (on) -- gate-to-source voltage, v gs -- v static drain-to-source on-state resistance, r ds (on) -- ambient temperature, ta -- c 0.05 0.30 0.10 0.15 0.20 0.25 0 0 0.10 0.05 0.20 0.15 0.25 0.30 0 1.0 0.8 0.6 0.1 0.2 0.4 0.9 0.7 0.3 0.5 it10821 0 1.0 0.5 2.0 3.0 4.0 1.5 2.5 3.5 4.5 it10822 it10824 02468 16 10 12 14 it10823 3.0 0 1.0 0.5 1.5 2.0 2.5 ta= 75 c 25 c -- 2 5 c ta=25 c v gs =3v v ds =10v 15v 5v 4v --60 0 2.0 2.5 1.0 1.5 0.5 3.0 --40 --20 0 20 40 60 80 100 120 140 160 v gs =4v, i d =80ma v gs =10v, i d =150ma 10v 6v 7v i d =80ma 150ma drain current, i d -- a
3HN04S no. a1014-3/4 0 0.2 0.6 1.0 0.4 0.8 2.0 1.4 1.2 1.6 1.8 0 1 2 6 4 3 7 8 9 5 10 it10829 7 5 7 100 10 5 3 2 3 2 it10827 it10825 0.01 0.1 23 5 2 7 1.0 357 024 8 610 10 5 3 7 3 2 5 2 it10828 it10826 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 7 5 3 2 2 0.1 7 5 3 2 v gs =0v --25 c 25 c ta= 75 c t d (on) t d (off) t f t r v dd =15v v gs =10v ciss coss crss v ds =10v i d =300ma 0.001 10 0.01 23 57 2 0.1 357 2 1.0 357 100 7 5 3 2 7 5 3 2 v ds =10v 75 c ta= --25 c 25 c 1.0 7 5 3 f=1mhz p d -- ta ambient temperature, ta -- c allowable power dissipation, p d -- w v gs -- qg sw time -- i d ciss, coss, crss -- v ds ? y fs ? -- i d i s -- v sd drain current, i d -- a switching time, sw time -- ns drain current, i d -- a forward transfer admittance, ? y fs ? -- ms diode forward voltage, v sd -- v source current, i s -- a drain-to-source voltage, v ds -- v ciss, coss, crss -- pf total gate charge, qg -- nc gate-to-source voltage, v gs -- v 0 0 20 40 0.02 0.04 0.06 0.08 0.10 0.18 0.14 0.16 0.15 0.12 60 80 100 120 140 160 it13184 when mounted on glass epoxy substrate (145mm ? 80mm ? 1.6mm)
3HN04S no. a1014-4/4 sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. ps note on usage : since the 3HN04S is a mosfet product, please avoid using this device in the vicinity of highly charged objects. this catalog provides information as of january, 2008. specifications and information herein are subject to change without notice.
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