savantic semiconductor product specification silicon npn power transistors 2N6702 description with to-220 package fast switching speed low collector saturation voltage applications designed for converters,inverters, pulse-width-modulated regulators and a variety of power switching circuits. pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector- base voltage open emitter 140 v v ceo collector- emitter voltage open base 90 v v ebo emitter-base voltage open collector 7 v i c collector current 7 a i cm collector current-peak 10 a i b base current 6 a p t total power dissipation t c =25 50 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 2.5 /w
savantic semiconductor product specification 2 silicon npn power transistors 2N6702 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =10ma ;i b =0 90 v v cesat-1 collector-emitter saturation voltage i c =5a;i b =0.5a 0.8 v v cesat-2 collector-emitter saturation voltage i c =7a;i b =0.7a 1.5 v v be sat base-emitter saturation voltage i c =5a;i b =0.5a 1.5 v i cev collector cut-off current v ce =140v;v be =1.5v t c =125 0.1 1.0 ma i ebo emitter cut-off current v eb =7v; i c =0 0.1 ma h fe-1 dc current gain i c =0.2a ; v ce =2v 30 h fe-2 dc current gain i c =5a ; v ce =2v 20 cob output capacitance i e =0 ; f=0.1mhz,v cb =10v 50 150 pf f t transition frequency i c =0.5a ; v ce =10v 50 200 mhz
savantic semiconductor product specification 3 silicon npn power transistors 2N6702 package outline fig.2 outline dimensions(unindicated tolerance: 0.10 mm)
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