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| inchange semiconductor isc product specification isc website www.iscsemi.cn isc silicon npn power transistor 2N4912 description collector-emitter sustaining voltage- : v ceo(sus) = 80v(min) low collector saturatioin voltage- : v ce(sat) = 0.6v(max.)@ i c = 1a wide area of safe operation complement to type 2n4900 applications designed for driver circuits, switching and amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base v oltage 80 v v ceo collector-emitter v oltage 80 v v ebo emitter-base voltage 5 v i c collector current-continuous 1 a i cm collector current-peak 4 a i b collector current-continuous 1 a p c collector power dissipation @ t c =25 25 w t j junction temperature 200 t stg storage temperature range -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 7.0 /w
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon npn power transistor 2N4912 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma; i b = 0 80 v v ce (sat) collector-emitter saturation voltage i c = 1a; i b = 0.1a 0.6 v v be (sat) base-emitter saturation voltage i c = 1a; i b = 0.1a 1.3 v v be (on) base-emitter on voltage i c = 1a ; v ce = 1v 1.3 v i cex collector cutoff current v ce = 80v;v be( off ) = 1.5v v ce = 80v;v be( off ) = 1.5v;t c =150 0.1 1.0 ma i ceo collector cutoff current v ce = 40v; i b = 0 0.5 ma i cbo collector cutoff current v cb = 60v; i e = 0 0.1 ma i ebo emitter cutoff current v eb = 5v; i c = 0 1.0 ma h fe-1 dc current gain i c = 50ma ; v ce = 1v 40 h fe-2 dc current gain i c = 500ma ; v ce = 1v 20 100 h fe-3 dc current gain i c = 1a ; v ce = 1v 10 f t current-gain bandwidth product i c = 0.25a;v ce = 10v, f test = 1mhz 3 mhz c ob output capacitance i e = 0;v cb = 10v; f test = 100khz 100 pf |
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