? 2004 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c 250 v v dgr t j = 25 c to 175 c; r gs = 1 m ? 250 v v gsm 20 v i d25 t c = 25 c 120 a i d(rms) external lead current limit 75 a i dm t c = 25 c, pulse width limited by t jm 300 a i ar t c = 25 c60a e ar t c = 25 c60mj e as t c = 25 c 2.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 4 ? p d t c = 25 c 700 w t j -55 ... +175 c t jm 175 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c m d mounting torque 1 .13/10 nm/lb.in. weight to-264 10 g g = gate d = drain s = source tab = drain ds99175(04/04) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 250 v v gs(th) v ds = v gs , i d = 500 a 2.5 5.0 v i gss v gs = 20 v dc , v ds = 0 200 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 250 a r ds(on) v gs = 10 v, i d = 0.5 i d25 19 24 m ? pulse test, t 300 s, duty cycle d 2 % polarht tm power mosfet ixtk 120n25p advanced technical information n-channel enhancement mode features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density polarht tm dmos transistors utilize proprietary designs and process. us patent is pending. v dss = 250 v i d25 = 120 a r ds(on) =24 m ? ? ? ? ? to-264(sp) (ixtk) (tab) g d s
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b1 6,683,344 ixtk 120n25p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 50 70 s c iss 8000 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1300 pf c rss 220 pf t d(on) 30 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 60 a 33 ns t d(off) r g = 3.3 ? (external) 130 ns t f 33 ns q g(on) 185 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 50 nc q gd 80 nc r thjc 0.18 k/w r thck 0.15 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 120 a i sm repetitive 300 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25 a 200 ns -di/dt = 100 a/ s q rm v r = 100 v 3.0 c to-264(sp) outline (ixtk)
? 2004 ixys all rights reserved ixtk 120n25p fig. 2. extended output characteristics @ 25 o c 0 25 50 75 100 125 150 175 200 225 250 02468101214161820 v d s - volts i d - amperes v gs = 10v 7v 6v 8v 9v fig. 3. output characteristics @ 150 o c 0 10 20 30 40 50 60 70 80 90 100 110 120 012345678 v d s - volts i d - amperes v gs = 10v 9v 5v 6v 7v 8v fig. 1. output characteristics @ 25 o c 0 10 20 30 40 50 60 70 80 90 100 110 120 00.511.522.533.5 v d s - volts i d - amperes v gs = 10v 9v 7v 6v 8v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction temperature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalize d i d = 120a i d = 60a v gs = 10v fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes external lead current limit fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. drain current 0.6 1 1.4 1.8 2.2 2.6 3 3.4 3.8 0 30 60 90 120 150 180 210 240 270 i d - amperes r d s ( o n ) - normalize d t j = 25 o c v gs = 10v t j = 150 o c v gs = 15v
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b1 6,683,344 ixtk 120n25p fig. 11. capacitance 100 1000 10000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 200 q g - nanocoulombs v g s - volts v ds = 125v i d = 60a i g = 10ma fig. 7. input admittance 0 30 60 90 120 150 180 210 44.5 55.5 66.5 77.5 88.5 v g s - volts i d - amperes t j = 150 o c 25 o c -40 o c fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 100 110 0 30 60 90 120 150 180 210 i d - amperes g f s - siemens t j = -40 o c 25 o c 150 o c fig. 9. source current vs. source-to-drain voltage 0 50 100 150 200 250 300 350 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 v s d - volts i s - amperes t j = 150 o c t j = 25 o c fig. 12. forw ard-bias safe operating area 1 10 100 1000 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 150 o c t c = 25 o c r ds(on) limit 10ms 25s
? 2004 ixys all rights reserved ixtk 120n25p fig. 13. maxim um transient therm al resistance 0.00 0.01 0.10 1.00 0.1 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - oc / w
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