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  tsm2314 20v n - channel mosfet 1 / 6 version: c 07 sot - 23 features advance trench process technology high density cell design for ultra low on - resistance application load switch pa switch ordering information part no. package packing tsm2314cx rf sot - 23 3kpcs / 7 reel absolute maximum rating ( ta = 25 o c unless otherwise noted ) parameter symbol limit unit drain - source voltage v ds 20 v gate - source voltage v gs 12 v continuous drain current, v gs @4.5v. i d 4.9 a pulsed drain current, v gs @4.5v i dm 15 a continuous sour ce current (diode conduction) a,b i s 1.0 a ta = 25 o c 1.25 maximum power dissipation ta = 75 o c p d 0.8 w operating junction temperature t j +150 o c operating junction and storage temperature range t j , t stg - 55 to +150 o c thermal performance parameter s ymbol limit unit junction to case thermal resistance r? jf 75 o c/w junction to ambient thermal resistance (pcb mounted) r? ja 12 0 o c/w note s : a. pulse width limited by the maximum junction temperature b. surface mounted on fr4 board, t 5 sec. product summary v ds (v) r ds(on) (m) i d (a) 33 @ v gs = 4.5v 4.9 40 @ v gs = 2.5v 4.4 20 100 @ v gs = 1.8v 2.9 block diagram n - channel mosfet pin definition : 1. gate 2. source 3. drain
tsm2314 20v n - channel mosfet 2 / 6 version: c 07 electrical specifications ( ta = 25 o c unless otherwise noted ) parameter conditions symbol min typ max u nit static drain - source breakdown voltage v gs = 0 v, i d = 250 a bv dss 20 -- -- v gate threshold voltage v ds = v gs , i d = 250 a v gs(th) 0.45 -- 1 v gate body leakage v gs = 4.5v, v ds = 0v i gss -- -- 1.5 a zero g ate voltage drain current v ds = 16v, v gs = 0v i dss -- -- 1.0 a on - state drain current v ds 10v, v gs = 4.5v i d(on) 15 -- -- a v gs = 4.5v, i d = 4.9a -- 27 33 v gs = 2.5v, i d = 4.4a -- 33 40 drain - source on - state resistance v gs = 1.8v, i d = 2 .9a r ds(on) -- 80 100  m forward transconductance v ds = 1 5v, i d = 5.0a g fs -- 40 -- s diode for ward voltage i s = 1.0a, v gs = 0v v sd -- 0.8 1.2 v dynamic b total gate charge q g -- 11 14 gate - source charge q gs -- 1.5 -- gate - drain charge v ds = 10v, i d = 5.0a, v gs = 4.5v q gd -- 2.1 -- nc input capacitance c is s -- 900 -- output capacitance c oss -- 140 -- reverse transfer capacitance v ds = 10v, v gs = 0v, f = 1.0mhz c rss -- 100 -- pf switching c turn - on delay time t d(on) -- 0.53 0.8 turn - on rise time t r -- 1.4 2.2 turn - off delay time t d(off) -- 13.5 20 turn - off fall time v dd = 10v, r l = 10 , i d = 1a, v gen = 4.5v, r g = 6 t f -- 5.9 9 ns notes: a. pulse test: pw 300 s, d u ty cycle 2% b. for design aid only, not subject to production testing. b. switching time is essentially independent of operating temperature.
tsm2314 20v n - channel mosfet 3 / 6 version: c 07 electrical characteristics curve ( ta = 25 \ o c , unless otherwise noted ) output characteristics transfer characteristics on - resistance vs. d rain current gate charge on - resistance vs. junction temperature source - drain diode forward voltage
tsm2314 20v n - channel mosfet 4 / 6 version: c 07 electrical characteristics curve ( ta = 25 o c , unless otherwise noted ) on - resistance vs. gate - source voltage threshold voltage single pulse po wer normalized thermal transient impedance, junction - to - ambient
tsm2314 20v n - channel mosfet 5 / 6 version: c 07 sot - 23 mechanical drawing marking diagram 14 = device code y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k = nov, l =dec) l = lot code sot - 23 dimension millimeters inches dim min max min max. a 0.95 bsc 0.037 bsc a1 1.9 bsc 0.074 bsc b 2.60 3.00 0.102 0.11 8 c 1.40 1.70 0.055 0.067 d 2.80 3.10 0.110 0.122 e 1.00 1.30 0.039 0.051 f 0.00 0.10 0.000 0.004 g 0.35 0.50 0.014 0.020 h 0.10 0.20 0.004 0.008 i 0.30 0.60 0.012 0.024 j 5 10 5 10
tsm2314 20v n - channel mosfet 6 / 6 version: c 07 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inacc uracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and conditions of sale for such pro ducts, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any p atent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale.


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