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  ? semiconductor components industries, llc, 2004 april, 2004 ? rev. 3 1 publication order number: dan222/d dan222 common cathode silicon dual switching diode this common cathode silicon epitaxial planar dual diode is designed for use in ultra high speed switching applications. this device is housed in the sot?416/sc?90 package which is designed for low power surface mount applications, where board space is at a premium. features ? fast t rr ? low c d ? available in 8 mm tape and reel ? pb?free package is available maximum ratings (t a = 25 c) rating symbol value unit reverse voltage v r 80 vdc peak reverse voltage v rm 80 vdc forward current i f 100 madc peak forward current i fm 300 madc peak forward surge current i fsm (1) 2.0 adc maximum ratings are those values beyond which device damage can occur. max- imum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceed- ed, device functional operation is not implied, damage may occur and reliability may be affected. thermal characteristics rating symbol max unit power dissipation p d 150 mw junction temperature t j 150 c storage temperature range t stg ?55 to +150 c 1. t = 1  s http://onsemi.com device package shipping 2 ordering information sot?416 case 463 style 3 marking diagram n9 dan222 sot?416 3000/tape & reel cathode 3 12 anode 1 2 3 DAN222T1 sot?416 3000/tape & reel DAN222T1g sot?416 (pb?free) 3000/tape & reel 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d.
dan222 http://onsemi.com 2 electrical characteristics (t a = 25 c) characteristic symbol condition min max unit reverse voltage leakage current i r v r = 70 v e 0.1  adc forward voltage v f i f = 100 ma e 1.2 vdc reverse breakdown voltage v r i r = 100  a 80 e vdc diode capacitance c d v r = 6.0 v, f = 1.0 mhz e 3.5 pf reverse recovery time t rr (2) i f = 5.0 ma, v r = 6.0 v, r l = 100  , i rr = 0.1 i r e 4.0 ns 2. t rr test circuit on following page. typical electrical characteristics 100 0.2 0.4 v f , forward voltage (volts) 0.6 0.8 1.0 1.2 10 1.0 0.1 10 0 v r , reverse voltage (volts) 1.0 0.1 0.01 0.001 10 20 30 40 50 i f , forward current (ma) figure 1. forward voltage figure 2. reverse current figure 3. diode capacitance t a = 150 c t a = 125 c t a = 85 c t a = 55 c t a = 25 c i r , reverse current ( m a) t a = 85 c t a = -40 c t a = 25 c 1.0 0 0.9 0.8 0.7 0.6 2468 v r , reverse voltage (volts) c d , diode capacitance (pf)
dan222 http://onsemi.com 3 a r l t r t p t 10% 90% v r t p = 2  s t r = 0.35 ns i f t rr t i rr = 0.1 i r i f = 5.0 ma v r = 6 v r l = 100  recovery time equivalent test circuit input pulse output pulse figure 4. reverse recovery time test circuit for the dan222
dan222 http://onsemi.com 4 package dimensions sot?416/sc?90 case 463?01 issue c style 3: pin 1. anode 2. anode 3. cathode dim min max min max inches millimeters a 0.70 0.90 0.028 0.035 b 1.40 1.80 0.055 0.071 c 0.60 0.90 0.024 0.035 d 0.15 0.30 0.006 0.012 g 1.00 bsc 0.039 bsc h ??? 0.10 ??? 0.004 j 0.10 0.25 0.004 0.010 k 1.45 1.75 0.057 0.069 l 0.10 0.20 0.004 0.008 s 0.50 bsc 0.020 bsc notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. m 0.20 (0.008) b ?a? ?b? s d g 3 pl 0.20 (0.008) a k j l c h 3 2 1 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 dan222/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.


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Price & Availability of DAN222T1
Newark

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onsemi Diode, Switching, 80V, Sc-75; Diode Configuration:Dual Common Cathode; Repetitive Reverse Voltage Vrrm Max:80V; Forward Current If(Av):100Ma; Forward Voltage Vf Max:1.2V; Reverse Recovery Time Trr Max:4Ns; Forward Surge Current Ifsm Rohs Compliant: Yes |Onsemi DAN222T1G 1000: USD0.042
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onsemi Switch Diode, 80V, 100Ma, Sot-416; Diode Configuration:Dual Common Cathode; Repetitive Peak Reverse Voltage:80V; Average Forward Current:100Ma; Forward Voltage Max:1.2V; Reverse Recovery Time:4Ns; Forward Surge Current:2A Rohs Compliant: Yes |Onsemi DAN222T1G 1000: USD0.039
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NSVDAN222T1G
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Avnet Americas

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Mouser Electronics

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