1 composite transistors xn04505 (XN4505) npn epitaxial planer transistor for general amplification (tr1) for amplification of low frequency output (tr2) features two elements incorporated into one package. reduction of the mounting area and assembly cost by one half. basic part number of element 2sd0601a(2sd601a) + 2sd1328 absolute maximum ratings (ta=25?c) unit: mm marking symbol: dz internal connection parameter symbol ratings unit collector to base voltage v cbo 60 v collector to emitter voltage v ceo 50 v emitter to base voltage v ebo 7v collector current i c 100 ma peak collector current i cp 200 ma collector to base voltage v cbo 25 v collector to emitter voltage v ceo 20 v emitter to base voltage v ebo 12 v collector current i c 0.5 a peak collector current i cp 1a total power dissipation p t 300 mw junction temperature t j 150 ?c storage temperature t stg ?5 to +150 ?c tr1 overall tr2 1 : collector (tr1) 4 : collector (tr2) 2 : base (tr2) 5 : base (tr1) 3 : emitter (tr2) 6 : emitter (tr1) eiaj : sc?4 mini6-g1 package 2.90 1.9 0.1 0.16 +0.10 ?0.06 2.8 +0.2 ?0.3 1.1 +0.3 ?0.1 1.1 0 to 0.1 +0.2 ?0.1 1.50 (0.65) 0.4 0.2 +0.25 ?0.05 (0.95) 0.30 +0.10 ?0.05 0.50 +0.10 ?0.05 (0.95) 654 1 32 +0.20 ?0.05 5 10 61 2 tr2 tr1 5 43 not e ) the p art n umber in the p arenthesis sh o ws co n ventional pa r t n umbe r .
2 composite transistors electrical characteristics (ta=25?c) tr1 parameter symbol conditions min typ max unit collector to base voltage v cbo i c = 10 a, i e = 0 60 v collector to emitter voltage v ceo i c = 2ma, i b = 0 50 v emitter to base voltage v ebo i e = 10 a, i c = 0 7 v collector cutoff current i cbo v cb = 20v, i e = 0 0.1 a i ceo v ce = 10v, i b = 0 100 a forward current transfer ratio h fe v ce = 10v, i c = 2ma 160 460 collector to emitter saturation voltage v ce(sat) i c = 100ma, i b = 10ma 0.1 0.3 v transition frequency f t v cb = 10v, i e = ?ma, f = 200mhz 150 mhz collector output capacitance c ob v cb = 10v, i e = 0, f = 1mhz 3.5 pf tr2 parameter symbol conditions min typ max unit collector to base voltage v cbo i c = 10 a, i e = 0 25 v collector to emitter voltage v ceo i c = 1ma, i b = 0 20 v emitter to base voltage v ebo i e = 10 a, i c = 0 12 v collector cutoff current i cbo v cb = 25v, i e = 0 0.1 a forward current transfer ratio h fe1 v ce = 2v, i c = 0.5a *1 200 800 h fe2 v ce = 2v, i c = 1a *1 60 collector to emitter saturation voltage v ce(sat) i c = 0.5a, i b = 20ma 0.13 0.4 v base to emitter saturation voltage v be(sat) i c = 0.5a, i b = 20ma 1.2 v transition frequency f t v cb = 10v, i e = ?0ma 200 mhz collector output capacitance c ob v cb = 10v, i e = 0, f = 1mhz 10 pf on resistance r on *2 1.0 ? *1 pulse measurement *2 r on test circuit v b i b =1ma r on = ? 1000( ? ) f=1khz v=0.3v 1k ? v a v v v a ? v b v b common characteristics chart p t ?ta 0 100 200 300 400 500 0 40 80 120 160 ambient temperature ta ( ?c ) total power dissipation p t ( mw ) xn04505
3 composite transistors xn04505 characteristics charts of tr1 i c ?v ce i b ?v be i c ?v be i c ?i b v ce(sat) ?i c h fe ?i c f t ?i e 0 01.0 0.8 0.6 0.4 0.2 1200 1000 800 600 400 200 base to emitter voltage v be ( v ) base current i b ( a ) v ce =10v ta=25 ? c 0 02.0 1.6 1.2 0.8 0.4 240 200 160 120 80 40 base to emitter voltage v be ( v ) collector current i c ( ma ) v ce =10v ta=75 ? c 25 ? c 25 ? c 0 0 1000 800 600 400 200 240 200 160 120 80 40 collector current i c ( ma ) base current i b ( a ) v ce =10v ta=25 ? c 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75 ? c 25 ? c 25 ? c 0 0.1 0.3 300 240 180 120 60 1 3 10 30 100 transition frequency f t ( mhz ) emitter current i e ( ma ) v cb =10v ta=25 ? c 0 0.1 0.3 600 500 400 300 200 100 1 3 10 30 100 forward current transfer ratio h fe collector current i c ( ma ) v ce =10v ta=75 ? c 25 ? c 25 ? c 0 010 24 8 6 60 50 40 30 20 10 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25 ? c i b =160 a 140 a 120 a 100 a 80 a 60 a 40 a 20 a
4 composite transistors characteristics charts of tr2 i c ?v ce v ce(sat) ?i c v be(sat) ?i c h fe ?i c f t ?i e c ob ?v cb xn04505 0.01 0.03 0.01 0.03 0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =25 ta=75 ? c 25 ? c 25 ? c 0.01 0.03 0.01 0.03 0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) i c /i b =10 ta= 25 ? c 25 ? c 75 ? c 1 3 10 30 100 2 20 5 50 transition frequency f t ( mhz ) emitter current i e ( ma ) 0 400 350 300 250 200 150 100 50 v cb =10v ta=25 ? c 0 1 24 20 16 12 8 4 3 10 30 100 220 550 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25 ? c 0 0.01 0.03 1200 1000 800 600 400 200 0.1 0.3 1 3 10 forward current transfer ratio h fe collector current i c ( a ) v ce =2v ta=75 ? c 25 ? c 25 ? c 0 06 15 24 3 1.2 1.0 0.8 0.6 0.4 0.2 collector to emitter voltage v ce ( v ) collector current i c ( a ) ta=25 ? c i b =4.0ma 0.5ma 1.0ma 1.5ma 2.0ma 2.5ma 3.0ma 3.5ma
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