features ? complementary t o ktc3875 ? low noise ? excellent h fe linearity m aximum r atings (t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector - base voltage - 50 v v ceo collector - emitter voltage - 50 v v ebo emitter - base voltage - 5 v i c collector current - 1 50 m a p c collector power dissipation 150 m w r ja thermal resistance fro m j u nction to a mbient 833 /w t j junction temperature 150 t stg storage temperature - 55 + 150 electrical characteristics ( t a =25 unless otherwise specified) p arameter symbol test conditions m in t yp m ax u nit collector - base breakdown voltag e v (br) cbo i c = - 1 00 a , i e =0 - 50 v collector - emitter breakdown voltage v (br) c e o i c = - 1 ma, i b =0 - 50 v emitter - base breakdown voltage v (br)eb o i e = - 10 0 a , i c =0 - 5 v collector cut - off current i cbo v cb = - 50 v, i e =0 - 0.1 a emitter cut - off current i eb o v eb = - 5 v, i c =0 - 0.1 a dc current gain h fe v ce = - 6 v, i c = - 2 m a 70 400 collector - emitter saturation voltage v ce(sat) i c = - 100 m a, i b = - 10 ma - 0. 3 v transition frequency f t v ce = - 1 0 v,i c = - 1 ma , 80 mhz collector output capacitance c ob v cb = - 10 v, i e =0, f= 1 m hz 7 pf classification of h fe rank o y gr range 70 C 140 120 C 240 200 C 400 marking aso asy asg so t C 23 1. base 2. emitter 3. collector KTA1504 transistor (pnp) 1 date:2011/05 www.htsemi.com semiconductor jinyu
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