symbol maximum units parameter absolute maximum ratings t c =25c unless otherwise noted aod4185/AOI4185 v ds (v) = -40v i d = -40a (v gs = -10v) r ds(on) < 15m w (v gs = -10v) r ds(on) < 20m w (v gs = -4.5v) the aod4185/AOI4185 uses advanced trench technology to provide excellent r ds(on) and low gate charge. with the excellent thermal resistance of the dpak/ipak package, this device is well suited for high current applications. g d s symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 15 20 41 50 r q jc 2 2.4 c/w thermal characteristics parameter units maximum junction-to-ambient a,g t 10s r q ja c/w steady-state t a =25c p dsm t c =25c maximum junction-to-ambient a,g steady-state power dissipation a junction and storage temperature range maximum junction-to-case d,f t c =100c p d -115 -42 88 c/w drain-source voltage v 20 gate-source voltage t a =70c power dissipation b avalanche current c repetitive avalanche energy l=0.1mh c a mj i d pulsed drain current c -40 -31 continuous drain current b,h maximum units parameter t c =25c t c =100c -40 v c 62.5 31 -55 to 175 w 2.5 1.6 www.freescale.net.cn 1/6 p-channel enhancement mode field general description effect transistor features
symbol min typ max units bv dss -40 v -1 t j =55c -5 i gss 100 na v gs(th) -1.7 -1.9 -3 v i d(on) -115 a 12.5 15 t j =125c 19 23 16 20 g fs 50 s v sd -0.72 -1 v i s -20 a c iss 2550 pf c oss 280 pf c rss 190 pf r g 2.5 4 6 w q g (-10v) 42 55 nc q g (-4.5v) 18.6 q gs 7 nc q gd 8.6 nc t d(on) 9.4 ns r ds(on) static drain-source on-resistance forward transconductance diode forward voltage v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current gate threshold voltage v ds =v gs i d =-250 m a on state drain current v gs =-10v, v ds =-5v v gs =-10v, i d =-20a reverse transfer capacitance output capacitance dynamic parameters i dss m a drain-source breakdown voltage i d =-250 m a, v gs =0v v ds =-40v, v gs =0v electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions m w gate drain charge v gs =0v, v ds =-20v, f=1mhz switching parameters total gate charge v gs =-4.5v, i d =-15a i s =-1a,v gs =0v v ds =-5v, i d =-20a turn-on delaytime maximum body-diode continuous current input capacitance gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz v gs =-10v, v ds =-20v, i d =-20a total gate charge t d(on) 9.4 ns t r 20 ns t d(off) 55 ns t f 30 ns t rr 38 49 ns q rr 47 nc body diode reverse recovery time i f =-20a, di/dt=100a/ m s turn-on rise time turn-off delaytime v gs =-10v, v ds =-20v, r l =1 w , r gen =3 w turn-off fall time turn-on delaytime tbd tbd body diode reverse recovery charge i f =-20a, di/dt=100a/ m s a: the value of r ja is measured with the device in a still air environm ent with t a =25 c. the power dissipation p dsm and current rating i dsm are based on t j(max) =150 c, using steady state junction-to-ambient thermal r esistance. b. the power dissipation p d is based on t j(max) =175 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c: repetitive rating, pulse width limited by juncti on temperature t j(max) =175 c. d. the r ja is the sum of the thermal impedence from junction t o case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175 c. the soa curve provides a single pulse rating. g. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. h. the maximum current rating is limited by bond-w ires. *this device is guaranteed green after data code 8x 11 (sep 1 st 2008). rev4: april, 2012 www.freescale.net.cn 2/6 aod4185/AOI4185 p-channel enhancement mode field effect transistor
typical electrical and thermal characteristics 0 20 40 60 80 100 120 0 1 2 3 4 5 -i d (a) -v ds (volts) figure 1: on-region characteristics v gs =-3.5v -4.0v -10v - 6.0v -4.5v ` 0 20 40 60 80 100 1.5 2 2.5 3 3.5 4 4.5 5 -i d (a) -v gs (volts) figure 2: transfer characteristics 10 12 14 16 18 20 22 24 0 10 20 30 40 50 60 r ds(on) (m w w w w ) 0.6 0.8 1 1.2 1.4 1.6 1.8 2 - 50 - 25 0 25 50 75 100 125 150 175 200 normalized on-resistance v gs =-10v i d =-20a v gs =-4.5v i d =-15a v ds =-5v v gs =-4.5v v gs =-10v 25 125 c 150 mj 10 0 10 20 30 40 50 60 -i d (a) figure 3: on-resistance vs. drain current and gate voltage 0.00001 0.0001 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics 25 c 125 c 0.6 -50 -25 0 25 50 75 100 125 150 175 200 temperature (c) figure 4: on-resistance vs. junction temperature 10 15 20 25 30 35 40 45 3 4 5 6 7 8 9 10 r ds(on) (m w w w w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage i d =-20a 25 c 125 c www.freescale.net.cn 3/6 aod4185/AOI4185 p-channel enhancement mode field effect transistor
typical electrical and thermal characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 45 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 500 1000 1500 2000 2500 3000 3500 0 5 10 15 20 25 30 35 40 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss 10 100 1000 10000 0.00001 0.0001 0.001 0.01 0.1 1 power (w) c oss c rss 0.1 1 10 100 1000 0.1 1 10 100 -i d (amps) 10ms 1ms dc r ds(on) limited t j(max) =175 c t c =25 c 10 m s 100 m s v ds =-20v i d =-20a t j(max) =175 c 150 mj 10 0.00001 0.0001 0.001 0.01 0.1 1 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 z q q q q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impe dance (note f) 0.1 0.1 1 10 100 -v ds (volts) figure 9: maximum forward biased safe operating area (note f) j(max) t c =25 c single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =2.4 c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse www.freescale.net.cn 4/6 aod4185/AOI4185 p-channel enhancement mode field effect transistor
typical electrical and thermal characteristics 0 10 20 30 40 50 0 25 50 75 100 125 150 175 -current rating i d (a) t case ( c) figure 13: current de-rating (note b) 1 10 100 1000 10000 power (w) t j(max) =150 c 0 10 20 30 40 50 60 70 0 25 50 75 100 125 150 175 power dissipation (w) t case ( c) figure 12: power de-rating (note b) 150 1 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 14: single pulse power rating junction-to-am bient (note g) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal impe dance (note g) d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =50 c/w single pulse t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse www.freescale.net.cn 5/6 aod4185/AOI4185 p-channel enhancement mode field effect transistor
vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v unclamped inductive switching (uis) test circuit & waveforms vds l 2 e = 1/2 li ar ar vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) vdd vgs id vgs rg dut vdc vgs vds id vgs unclamped inductive switching (uis) test circuit & waveforms vds l - + 2 e = 1/2 li ar ar bv dss i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i www.freescale.net.cn 6/6 aod4185/AOI4185 p-channel enhancement mode field effect transistor
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