sot223 pnp silicon planar high current (high performance) transistors issue 3 - january 1996 features * 1 amp continuous current * up to 2 amps peak current * very low saturation voltage * excellent gain characteristics specified up to 1 amp complementary types - FZT957 - fzt857 fzt958 - n/a partmarking details - device type in full absolute maximum ratings. parameter symbol FZT957 fzt958 unit collector-base voltage v cbo -300 -400 v collector-emitter voltage v ceo -300 -400 v emitter-base voltage v ebo -6 v peak pulse current i cm -2 -1.5 a continuous collector current i c -1 -0.5 a power dissipation at t amb =25c p tot 3w operating and storage temperature range t j :t stg -55 to +150 c *the power which can be dissipated assuming the device is mounted in a typical manner on a p.c.b. with copper equal to 4 square inch minimum FZT957 fzt958 c c e b 3 - 289
electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -330 -440 v i c =-100 m a collector-emitter breakdown voltage v (br)cer -330 -440 v i c =-1 m a, rb 1k w collector-emitter breakdown voltage v (br)ceo -300 -400 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -6 -8 v i e =-100 m a collector cut-off current i cbo -50 -1 na m a v cb =-300v v cb =-300v, t amb =100c collector cut-off current i cer r 1k w -50 -1 na m a v cb =-300v v cb =-300v, t amb =100c emitter cut-off current i ebo -10 na v eb =-6v collector-emitter saturation voltage v ce(sat) -60 -110 -170 -100 -165 -240 mv mv mv i c =-100ma, i b =-10ma* i c =-500ma, i b =-100ma* i c =-1a, i b =-300ma* base-emitter saturation voltage v be(sat) -910 -1150 mv i c =-1a, i b =-300ma* base-emitter turn-on voltage v be(on) -750 -1020 mv i c =-1a, v ce =-10v* static forward current transfer ratio h fe 100 100 90 200 200 170 10 300 i c =-10ma, v ce =-10v* i c =-0.5a, v ce =-10v* i c =-1a, v ce =-10v* i c =-2a, v ce =-10v* transition frequency f t 85 mhz i c =-100ma, v ce =-10v f=50mhz output capacitance c obo 23 pf v cb =-20v, f=1mhz switching times t on t off 108 2500 ns ns i c =-500ma, i b1 =-50ma i b2 =50ma, v cc =-100v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device FZT957 3 - 290 FZT957 3 - 291 -55c +25c +100c +175c +100c +25c -55c 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 typical characteristics v ce(sat) v i c i c - collector current (amps) v - ( v ol ts ) t amb =25c v ce(sat) v i c v - ( v ol ts ) -55c +25c +100c +175c i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h - nor ma l i sed ga i n v - ( v ol ts ) v - ( v ol ts ) i c /i b =20 i c /i b =5 i c /i b =10 v ce =10v v ce =10v 300 200 100 h - typical gain 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 i c - collector current (amps) -55c +25c +175c i c /i b =5 0.001 0.001 0.001 safe operating area single pulse test tamb=25c 0.1 1 1 10 100 v ce - collector voltage (v) 10 dc 10ms 1ms 100 m s 100ms 1s 0.01 1000
electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -330 -440 v i c =-100 m a collector-emitter breakdown voltage v (br)cer -330 -440 v i c =-1 m a, rb 1k w collector-emitter breakdown voltage v (br)ceo -300 -400 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -6 -8 v i e =-100 m a collector cut-off current i cbo -50 -1 na m a v cb =-300v v cb =-300v, t amb =100c collector cut-off current i cer r 1k w -50 -1 na m a v cb =-300v v cb =-300v, t amb =100c emitter cut-off current i ebo -10 na v eb =-6v collector-emitter saturation voltage v ce(sat) -60 -110 -170 -100 -165 -240 mv mv mv i c =-100ma, i b =-10ma* i c =-500ma, i b =-100ma* i c =-1a, i b =-300ma* base-emitter saturation voltage v be(sat) -910 -1150 mv i c =-1a, i b =-300ma* base-emitter turn-on voltage v be(on) -750 -1020 mv i c =-1a, v ce =-10v* static forward current transfer ratio h fe 100 100 90 200 200 170 10 300 i c =-10ma, v ce =-10v* i c =-0.5a, v ce =-10v* i c =-1a, v ce =-10v* i c =-2a, v ce =-10v* transition frequency f t 85 mhz i c =-100ma, v ce =-10v f=50mhz output capacitance c obo 23 pf v cb =-20v, f=1mhz switching times t on t off 108 2500 ns ns i c =-500ma, i b1 =-50ma i b2 =50ma, v cc =-100v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device FZT957 3 - 290 FZT957 3 - 291 -55c +25c +100c +175c +100c +25c -55c 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 typical characteristics v ce(sat) v i c i c - collector current (amps) v - ( v ol ts ) t amb =25c v ce(sat) v i c v - ( v ol ts ) -55c +25c +100c +175c i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h - nor ma l i sed ga i n v - ( v ol ts ) v - ( v ol ts ) i c /i b =20 i c /i b =5 i c /i b =10 v ce =10v v ce =10v 300 200 100 h - typical gain 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 i c - collector current (amps) -55c +25c +175c i c /i b =5 0.001 0.001 0.001 safe operating area single pulse test tamb=25c 0.1 1 1 10 100 v ce - collector voltage (v) 10 dc 10ms 1ms 100 m s 100ms 1s 0.01 1000
fzt958 electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -400 -600 v i c =-100 m a collector-emitter breakdown voltage v (br)cer -400 -600 v i c =-1 m a, rb 1k w collector-emitter breakdown voltage v (br)ceo -400 -550 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -6 -8 v i e =-100 m a collector cut-off current i cbo -50 -1 na m a v cb =-300v v cb =-300v, t amb =100c collector cut-off current i cer r 1k w -50 -1 na m a v cb =-300v v cb =-300v, t amb =100c emitter cut-off current i ebo -10 na v eb =-6v collector-emitter saturation voltage v ce(sat) -100 -150 -340 -150 -200 -400 mv mv mv i c =-10ma, i b =-1ma* i c =-100ma, i b =-10ma* i c =-500ma, i b =-100ma* base-emitter saturation voltage v be(sat) -830 -950 mv i c =-500ma, i b =-100ma* base-emitter turn-on voltage v be(on) -725 -840 mv i c =-500ma, v ce =-10v* static forward current transfer ratio h fe 100 100 10 200 200 20 300 i c =-10ma, v ce =-10v* i c =-500ma, v ce =-10v* i c =-1a, v ce =-10v* transition frequency f t 85 mhz i c =-100ma, v ce =-10v f=50mhz output capacitance c obo 19 pf v cb =-20v, f=1mhz switching times t on t off 104 2400 ns ns i c =-500ma, i b1 =-50ma i b2 =50ma, v cc =-100v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device 3 - 292 fzt958 3 - 293 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 typical characteristics v ce(sat) v i c i c - collector current (amps) v - ( v ol ts ) t amb =25c v ce(sat) v i c i c - collector current (amps) v - ( v ol ts ) -55c +25c +175c i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h - nor mali sed g ain v - ( v ol ts ) v - ( v ol ts ) i c /i b =5 i c /i b =20 i c /i b =5 -55c +25c +100c +175c i c /i b =10 +100c +25c -55c v ce =10v -55c +25c +100c +175c v ce =10v 300 200 100 h - typical gain 0.001 0.001 0.001 0.001 0.001 safe operating area single pulse test tamb=25c 0.1 1 1 10 100 v ce - collector voltage (v) 10 dc 10ms 1ms 100 m s 100ms 1s 0.01 1000
fzt958 electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -400 -600 v i c =-100 m a collector-emitter breakdown voltage v (br)cer -400 -600 v i c =-1 m a, rb 1k w collector-emitter breakdown voltage v (br)ceo -400 -550 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -6 -8 v i e =-100 m a collector cut-off current i cbo -50 -1 na m a v cb =-300v v cb =-300v, t amb =100c collector cut-off current i cer r 1k w -50 -1 na m a v cb =-300v v cb =-300v, t amb =100c emitter cut-off current i ebo -10 na v eb =-6v collector-emitter saturation voltage v ce(sat) -100 -150 -340 -150 -200 -400 mv mv mv i c =-10ma, i b =-1ma* i c =-100ma, i b =-10ma* i c =-500ma, i b =-100ma* base-emitter saturation voltage v be(sat) -830 -950 mv i c =-500ma, i b =-100ma* base-emitter turn-on voltage v be(on) -725 -840 mv i c =-500ma, v ce =-10v* static forward current transfer ratio h fe 100 100 10 200 200 20 300 i c =-10ma, v ce =-10v* i c =-500ma, v ce =-10v* i c =-1a, v ce =-10v* transition frequency f t 85 mhz i c =-100ma, v ce =-10v f=50mhz output capacitance c obo 19 pf v cb =-20v, f=1mhz switching times t on t off 104 2400 ns ns i c =-500ma, i b1 =-50ma i b2 =50ma, v cc =-100v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device 3 - 292 fzt958 3 - 293 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 typical characteristics v ce(sat) v i c i c - collector current (amps) v - ( v ol ts ) t amb =25c v ce(sat) v i c i c - collector current (amps) v - ( v ol ts ) -55c +25c +175c i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h - nor mali sed g ain v - ( v ol ts ) v - ( v ol ts ) i c /i b =5 i c /i b =20 i c /i b =5 -55c +25c +100c +175c i c /i b =10 +100c +25c -55c v ce =10v -55c +25c +100c +175c v ce =10v 300 200 100 h - typical gain 0.001 0.001 0.001 0.001 0.001 safe operating area single pulse test tamb=25c 0.1 1 1 10 100 v ce - collector voltage (v) 10 dc 10ms 1ms 100 m s 100ms 1s 0.01 1000
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