2008-03-21 page 1 bsp318s rev 2.2 sipmos small-signal-transistor features n-channel enhancement mode avalanche rated logic level d v /d t rated product summary drain source voltage v v ds 60 drain-source on-state resistance r ds(on) 0.09 w continuous drain current a i d 2.6 vps05163 1 2 3 4 type package tape and reel bsp318s pg-sot223 l6327: 1000 pcs/r maximum ratings ,at t j = 25 c, unless otherwise specified parameter symbol value unit continuous drain current 2.6 a i d pulsed drain current t a = 25 c i d puls 10.4 avalanche energy, single pulse i d = 2.6 a, v dd = 25 v, r gs = 25 w 60 mj e as avalanche current,periodic limited by t jmax a i ar 2.6 avalanche energy, periodic limited by t jmax 0.18 mj e ar reverse diode d v /d t i s = 2.6 a, v ds = 20 v, d i /d t = 200 a/s, t jmax = 150 c kv/s d v /d t 6 gate source voltage 20 v v gs power dissipation t a = 25 c w p tot 1.8 operating and storage temperature t j , t stg -55... +150 c iec climatic category; din iec 68-1 55/150/56 pb-free lead plating; rohs compliant ? pin 1 pin 2, 4 pin 3 g d s marking bsp318s ? qualified according to aec q101 packaging non dry
2008-03-21 page 2 bsp318s rev 2.2 thermal characteristics parameter symbol unit values typ. max. min. characteristics thermal resistance, junction - soldering point (pin 4) k/w - r thjs - 17 smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 1) r thja - - 100 - - 70 electrical characteristics , at t j = 25 c, unless otherwise specified parameter values symbol unit max. typ. min. static characteristics drain- source breakdown voltage v gs = 0 v, i d = 0.25 ma v (br)dss 60 - v - gate threshold voltage, v gs = v ds i d = 20 a 1.2 1.6 v gs(th) 2 zero gate voltage drain current v ds = 60 v, v gs = 0 v, t j = 25 c v ds = 60 v, v gs = 0 v, t j = 150 c 1 100 0.1 - a i dss - - gate-source leakage current v gs = 20 v, v ds = 0 v i gss 10 na 100 - r ds(on) - 0.12 drain-source on-state resistance v gs = 4.5 v, i d = 2.6 a 0.15 w drain-source on-state resistance v gs = 10 v, i d = 2.6 a r ds(on) - 0.07 0.09 1 device on 50mm*50mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air.
2008-03-21 page 3 bsp318s rev 2.2 electrical characteristics, at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. dynamic characteristics transconductance v ds 3 2* i d * r ds(on)max , i d = 2.6 a g fs 2.4 s - 5.5 input capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz - 380 pf 300 c iss output capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz - 90 120 c oss 65 50 - c rss reverse transfer capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz turn-on delay time v dd = 30 v, v gs = 4.5 v, i d = 2.6 a, r g = 16 w t d(on) 12 ns 20 - rise time v dd = 30 v, v gs = 4.5 v, i d = 2.6 a, r g = 16 w t r - 15 25 20 30 t d(off) turn-off delay time v dd = 30 v, v gs = 4.5 v, i d = 2.6 a, r g = 16 w - fall time v dd = 30 v, v gs = 4.5 v, i d = 2.6 a, r g = 16 w t f - 15 25
2008-03-21 page 4 bsp318s rev 2.2 electrical characteristics, at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. dynamic characteristics gate charge at threshold v dd = 40 v, i d = 0.1 a, v = 1 v - q g(th) nc 0.6 0.4 gate charge at v gs = 5 v v dd = 40 v, i d = 2.6 a, v gs = 0 to 5 v q g(5) 7 10 - 20 - q g gate charge total v dd = 40 v, i d = 2.6 a, v gs = 0 to 10 v 14 gate plateau voltage v dd = 40 v , i d = 2.6 a v (plateau) - 3.6 - v parameter values symbol unit max. typ. min. reverse diode a - - 2.6 i s inverse diode continuous forward current t a = 25 c inverse diode direct current,pulsed t a = 25 c - i sm - 10.4 inverse diode forward voltage v gs = 0 v, i f = 5.2 a v 1.2 v sd 0.95 - reverse recovery time v r = 30 v, i f = i s , d i f /d t = 100 a/s - 75 ns 50 t rr - 0.1 0.15 q rr reverse recovery charge v r = 30 v, i f = l s , d i f /d t = 100 a/s c
2008-03-21 page 5 bsp318s rev 2.2 power dissipation p tot = f (t a ) 0 20 40 60 80 100 120 c 160 t a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 w 1.9 bsp318s p tot drain current i d = f ( t a ) 0 20 40 60 80 100 120 c 160 t a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 a 2.8 bsp318s i d safe operating area i d = f ( v ds ) parameter : d = 0 , t a = 25 c 10 -1 10 0 10 1 10 2 v v ds -2 10 -1 10 0 10 1 10 2 10 a bsp318s i d r d s ( on) = v d s / i d dc 10 ms 1 ms t p = 140.0 s transient thermal impedance z thja = f (t p ) parameter : d = t p / t 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s t p -2 10 -1 10 0 10 1 10 2 10 k/w bsp318s z thja single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
2008-03-21 page 6 bsp318s rev 2.2 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 80 s 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v 5.0 v ds 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 a 6.5 bsp318s i d v gs [v] a a 2.0 b b 2.5 c c 3.0 d d 3.5 e e 4.0 f f 4.5 g g 5.0 h h 5.5 i i 6.0 j j 7.0 k k 8.0 l p tot = 1.80 w l 10.0 typ. transfer characteristics i d = f ( v gs ) v ds 3 2 x i d x r ds(on)max parameter: t p = 80 s 0 1 2 3 4 5 6 7 8 v 10 v gs 0 1 2 3 4 5 6 7 8 9 10 11 12 a 15 i d drain-source on-resistance r ds(on) = f ( t j ) parameter : i d = 2.6 a, v gs = 4.5 v -60 -20 20 60 100 c 180 t j 0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 w 0.36 bsp318s r ds(on) typ 98% gate threshold voltage v gs(th) = f ( t j ) parameter: v gs = v ds , i d = 20 a -60 -20 20 60 100 140 c 200 t j 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 v 3.0 v gs(th) min typ max
2008-03-21 page 7 bsp318s rev 2.2 typ. capacitances c = f(v ds ) parameter: v gs =0 v, f =1 mhz 0 5 10 15 20 25 30 v 40 v ds 1 10 2 10 3 10 pf c c iss c oss c rss forward characteristics of reverse diode i f = f (v sd ) parameter: t j , t p = 80 s 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v 3.0 v sd -1 10 0 10 1 10 2 10 a bsp318s i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%) avalanche energy e as = f ( t j ) parameter: i d = 2.6 a, v dd = 25 v r gs = 25 w 20 40 60 80 100 120 c 160 t j 0 5 10 15 20 25 30 35 40 45 50 55 mj 65 e as typ. gate charge v gs = f ( q gate ) parameter: i d = 2.6 a pulsed 0 4 8 12 16 nc 24 q gate 0 2 4 6 8 10 12 v 16 bsp318s v gs ds max v 0,8 ds max v 0,2
2008-03-21 page 8 bsp318s rev 2.2 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j 54 56 58 60 62 64 66 68 v 72 bsp318s v (br)dss
2008-03-21 page 9 bsp318s rev 2.2
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