unisonic technologies co., ltd utt18p10 preliminary power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2011 unisonic technologies co., ltd qw-r502-619.a 100v, 19a p-channel power mosfet ? description the utc utt18p10 is a p-channel power mosfet using utc?s advanced technology to provide the customers with high switching speed, cost-effectiveness and a mi nimum on-state resistance. it can also withstand high energy in the avalanche. ? features * r ds(on) <0.20 ? @ v gs =-10v, i d =-11a * high switching speed ? symbol 1.gate 2.drain 3.source to-252 1 ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing utt18p10l-tn3-r UTT18P10G-TN3-R to-252 g d s tape reel note: pin assignment: g: gate d: drain s: source
utt18p10 preliminary power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-619.a ? absolute maximum ratings (t j =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss -100 v gate-source voltage v gss 20 v t c =25c -19 a continuous, v gss @-10v t c =100c i d -13 a drain current pulsed (note 2) i dm -72 a avalanche current (note 2) i ar -19 a repetitive (note 3) e as 640 mj avalanche energy single pulsed (note 2) e ar 15 mj peak diode recovery dv/dt (note 4) dv/dt -5.5 v/ns power dissipation (t c =25c) p d 150 w junction temperature t j -55~+175 c storage temperature t stg -55~+175 c notes: 1. absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating; pulse width limi ted by max. junction temperature. 3. v dd =-25v, starting t j =25c, l=2.7mh, r g =25 ? , i as =-19a. (see figure 2) 4. i sd -19a, di/dt 200a/s, v dd bv dss , t j 175c ? thermal characteristics parameter symbol ratings unit junction to case jc 1.0 c/w
utt18p10 preliminary power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-619.a ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =-250a, v gs =0v -100 v breakdown voltage temperature coefficient ? bv dss / ? t j reference to 25c, i d =-1ma -0.08 7 v/c v ds =-100v, v gs =0v, -100 a drain-source leakage current i dss v ds =-80v, v gs =0v, t j =150c -500 a forward v gs =+20v +100 na gate- source leakage current reverse i gss v gs =-20v -100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =-250a -2.0 -4.0 v static drain-source on-state resistance r ds(on) v gs =-10v, i d =-11a (note 2) 0.20 ? forward transconductance g fs v ds =-50v, i d =-11a (note 2) 6.2 s dynamic parameters input capacitance c iss 1400 pf output capacitance c oss 590 pf reverse transfer capacitance c rss v ds =-25v, v gs =0v, f=1.0mhz 140 pf switching parameters total gate charge q g 61 nc gate to source charge q gs 14 nc gate to drain ("miller") charge q gd v ds =-80v, v gs =-10v, i d =-19a, see fig 3 (note 2) 29 nc turn-on delay time t d(on) 16 ns rise time t r 73 ns turn-off delay time t d(off) 34 ns fall-time t f v dd =-50v, i d =-19a, r g =9.1 ? , r d = 2.4 ? , see fig. 1(note 2) 57 ns internal drain inductance l d 4.5 nh internal source inductance l s between lead, 6 mm (0.25.) from package and center of die contact 7.5 nh source- drain diode ratings and characteristics maximum body-diode continuous current i s -19 a maximum body-diode pulsed current (note 1) i sm mosfet symbol showing the integral reverse p-n junction diode. -72 a drain-source diode forward voltage v sd t j =25c, i s =-19a, v gs =0v (note 2) -5.0 v body diode reverse recovery time t rr 130 260 ns body diode reverse recovery charge q rr t j =25c, i f =-19a, di/dt=100a/s (note 2) 0.35 0.70 c forward turn-on time t on intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) notes : 1. repetitive rating; pulse width limit ed by max. junction temperature. 2. pulse width 300s; duty cycle 2%.
utt18p10 preliminary power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-619.a ? test circuits and waveforms r d -10v r g v gs v ds d.u.t. v dd + - pulse width 1 s duty factor 0.1% v ds 90% 10% v gs t d(on) t r t d(off) t f fig. 1a switching time test circuit fig. 1b switching time waveforms fig. 2a unclampled inductive test circuit fig. 2b unclampled inductive waveforms fig.3a gate charge test circuit fig. 3b gate c harge waveform
utt18p10 preliminary power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-619.a ? test circuits and waveforms(cont.) + driver gate drive (note 1) (note 2) (note 3) d.u.t. i sd waveform for n and p channel power mosfet *** v gs =5v for logic level and 3v drive devices ripple 5 % inductor curent body diode forward drop diode recovery dv/dt body diode forward current di/dt d.u.t. v ds waveform i sd re-applied voltage reverse recovery current v dd v gs =10v * d= p.w. period period p.w. notes: 1. repetitive rating; pulse width limit ed by max. junction temperature. 2. v dd =-25v, starting t j =25c, l=2.7mh, r g =25 ? , i as =-19a. (see figure 2) 3. i sd -19a, di/dt 200a/s, v dd bv dss , t j 175c
utt18p10 preliminary power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-619.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
|
