2001. 12. 5 1/3 semiconductor technical data KTC4666 epitaxial planar npn transistor revision no : 2 low noise amplifier application. feature high h fe : h fe =600 3600. noise figure : 0.5db(typ.) at f=100hz. maximum rating (ta=25 1 ) dim millimeters a b d e 1. emitter 2. base 3. collector usm 2.00 0.20 1.25 0.15 0.90 0.10 0.3+0.10/-0.05 2.10 0.20 0.65 0.15+0.1/-0.06 1.30 0.00-0.10 0.70 c g h j k l k 1 3 2 e b d a j g c l h mm n n m 0.42 0.10 n 0.10 min + _ + _ + _ + _ + _ electrical characteristics (ta=25 1 ) h rank type name marking t fe characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =50v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =5v, i c =0 - - 0.1 a dc current gain h fe (note) v ce =6v, i c =2ma 600 - 3600 collector-emitter saturation voltage v ce(sat) i c =100ma, i b =10ma - 0.12 0.25 v transition frequency f t v ce =10v, i c =10ma 100 250 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 3.5 - pf noise figure nf (1) v ce =6v, i c =0.1ma, f=100khz, rg=10k u - 0.5 - db nf (2) v ce =6v, i c =0.1ma, f=1khz, rg=10k u - 0.3 - characteristic symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current i c 150 ma base current i b 30 ma collector power dissipation p c 100 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1 note : h fe classification a:600 1800 , b:1200 3600
2001. 12. 5 2/3 KTC4666 revision no : 2 0 collector current i (ma) c 0 base emitter voltage v (v) be be c i - v 10 dc current gain h fe 3 1 0.3 0.1 collector current i (ma) c h - i collector current i (ma) voltage v (v) 0.1 0.3 0.01 ce(sat) v - i c 3 1 collector emitter voltage v (v) collector current i (ma) 0 0 c ce i - v cce 2468 40 80 120 160 common emitter ta=25 c 400 200 100 80 60 50 40 30 20 i =10 a 0 b fe c 10 30 100 300 30 50 100 300 500 1k 3k 5k common emitter v =6v ce base-emitter saturation collector current i (ma) 0.1 0.3 c 3 1 0.1 be(sat) v - i ce(sat) c 10 30 100 300 0.03 0.05 0.1 0.3 0.5 1 3 common emitter i /i =10 c b ta=100 c ta=25 c ta=-25 c transition frequency f (mhz) emitter current i (ma) e 10 t -0.1 -0.3 -3 -1 f - i be(sat) c voltage v (v) 10 30 100 300 0.3 0.5 1 3 5 10 30 i /i =10 c b common emitter ta=25 c 0.4 0.8 1.2 1.6 40 80 120 160 common emitter v =6v ce ta =100 c ta=25 c ta=-25 c te -10 -30 -100 -300 30 50 100 300 500 1k 3k 5k v =10v ta=25 c cc collector-emitter saturation ta=100 c ta=25 c ta=-25 c
2001. 12. 5 3/3 KTC4666 revision no : 2 c p (mw) 0 ciollector power dissipation 0 ambient temperature ta ( c) c p - ta c - v cb collector-base voltage v (v) 0.1 0.3 1 3 ob 1 collector output capacitance ob cb c (pf) 10 30 100 3 5 10 30 50 100 i =0 f=1mhz ta=25 c e 25 50 75 100 125 150 175 50 100 150 200 250
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