for general applications low turn-on voltage pn junction guard ring characteristic symbol value unit continuous reverse voltage v r 30 v forward continuous current* i f 200 ma peak forward current* i fm 300 ma surge forward current* @ tp = 1s i fsm 600 ma power dissipation* @ t a = 65c p tot 200 mw junction temperature t j 125 c operating temperature range t a -65 to +125 c storage temperature range t stg -65 to +150 c * valid provided that electrodes are kept at ambient temperature. characteristic symbol min typ max unit reverse breakdown voltage 10 a pulses v (br)r 30 ? ? v electrical characteristics @ t j = 25c unless otherwise specified glass case weight: 0.05g (approx) BAS85 silicon schottky barrier diode mini melf features maximum ratings and electrical characteristics rating at 25 o cambient temperature unle ss otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20% m echani cal d ata ? ? ? ? ? dimension in millimeters http://www.luguang.cn mail:lge@luguang.cn
characteristics (t j = 25 c unless otherwise specified) 0 20 40 60 80 100 120 140 160 180 200 25 50 75 100 125 150 t j junction temperature ( c ) 15822 v r = 30 v p reverse power dissipation ( mw ) r 540k/w p r limit @100%v r p r limit @80%v r r thja = figure 1. max. reverse power dissipation vs. junction temperature 1 10 100 1000 25 50 75 100 125 150 1 10 100 1000 25 50 75 100 125 150 t j junction temperature ( c ) 15823 v r = v rrm i reverse current ( a ) r figure 2. reverse current vs. junction temperature 0 0.5 1.0 1.5 i forward current ( a ) v f forward voltage ( v ) 15824 f t j =25 c t j = 150 c 0.1 1 10 100 1000 figure 3. forward current vs. forward voltage 0 1 2 3 4 5 6 7 8 9 10 0.1 1.0 10.0 100.0 v r reverse voltage ( v ) 15825 c diode capacitance ( pf ) d f=1mhz figure 4. diode capacitance vs. reverse voltage BAS85 silicon schottky barrier diode http://www.luguang.cn mail:lge@luguang.cn
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