v ds - 30 v i d (at v gs =-10v) -8 a r ds(on) (at v gs =-10v) < 26m ? r ds(on) (at v gs =-4.5v) < 34m ? symbol v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r jl 1.6 t a =70c junction and storage temperature range -55 to 150 c thermal characteristics units parameter typ max c/w r ja 42 74 50 v 20 gate-source voltage drain-source voltage -30 the AON4421 uses advanced trench technology to provide excellent r ds(on) with low gate charge. this device is suitable for use as a load switch. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted a i d -8 -6 -60 t a =25c t a =70c power dissipation b p d pulsed drain current c continuous drain current t a =25c w 2.5 maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 25 90 30 maximum junction-to-ambient a dfn 3x2 top view bottom view pin 1 g d d d s d d d s g d AON4421 p-channel enhancement mode field effect transistor general description features www.freescale.net.cn 1 / 5
symbol min typ max units bv dss -30 v v ds =-30v, v gs =0v -1 t j =55c -5 i gss 10 a v gs(th) gate threshold voltage -0.8 -1.3 -1.8 v i d(on) -60 a 21 26 t j =125c 28 34 27 34 m ? g fs 22 s v sd -0.74 -1 v i s -3 a c iss 930 1120 pf c oss 170 pf c rss 120 pf r g 8 ? q g (-10v) 17.6 21 nc q g (-4.5v) 8.6 10 nc q gs 2nc q gd 3.4 nc t d(on) 6ns t r 7ns t d(off) 40 ns t f 30 ns t rr 18 22 ns q rr 32 nc body diode reverse recovery charge i f =-8a, di/dt=500a/ s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =-10v, v ds =-15v, r l =1.9 ? , r gen =3 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =-10v, v ds =-15v, i d =-8a gate source charge gate drain charge total gate charge m ? i s =-1a,v gs =0v v ds =-5v, i d =-8a v gs =-4.5v, i d =-7a forward transconductance diode forward voltage r ds(on) static drain-source on-resistance i dss a v ds =v gs i d =-250 a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time drain-source breakdown voltage on state drain current i d =-250 a, v gs =0v v gs =-10v, v ds =-5v v gs =-10v, i d =-8a reverse transfer capacitance i f =-8a, di/dt=500a/ s v gs =0v, v ds =-15v, f=1mhz switching parameters a . the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junction temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initialt j =25c. d. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse rating. AON4421 p-channel enhancement mode field effect transistor www.freescale.net.cn 2 / 5
typical electrical and thermal characteristic s 17 5 2 10 0 18 40 0 5 10 15 20 25 30 0.5 1 1.5 2 2.5 3 3.5 4 -v gs (volts) figure 2: transfer characteristics (note e) -i d (a) 10 15 20 25 30 35 048121620 -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics (note e) -i s (a) 25c 125c 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =-4.5v i d =-7a v gs =-10v i d =-8a 10 20 30 40 50 60 70 246810 -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m ? ) 25c 125c v ds =-5v v gs =-4.5v v gs =-10v i d =-8a 25c 125c 0 10 20 30 40 50 60 012345 -v ds (volts) fig 1: on-region characteristics (note e) -i d (a) v gs =-2.5v -3v -6v -10v -3.5v -4v -4.5v AON4421 p-channel enhancement mode field effect transistor www.freescale.net.cn 3 / 5
typical electrical and thermal characteristic s 0 2 4 6 8 10 0 5 10 15 20 q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss v ds =-15v i d =-8a 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) power (w) t a =25c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 s 10s 1ms dc r ds(on) limited t j(max) =150c t a =25c 10ms 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r ja =90c/w 100ms AON4421 p-channel enhancement mode field effect transistor www.freescale.net.cn 4 / 5
vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds tt t t t t 90% 10% r on d(off) f off d(on) AON4421 p-channel enhancement mode field effect transistor www.freescale.net.cn 5 / 5
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