maximum ratings: (t a =25c) symbol units collector-emitter voltage v ceo 60 v collector-base voltage v cbo 60 v emitter-base voltage v ebo 5.0 v continuous collector current i c 50 ma power dissipation (one die) p d 500 mw power dissipation (both die) p d 600 mw operating and storage junction temperature t j , t stg -65 to +200 c electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min max units i cbo v cb =50v 10 na i ebo v be =4.0v 20 na bv ceo i c =10ma 60 v bv cbo i c =10a 60 v bv ebo i e =10a 5.0 v v ce(sat) i c =100a, i b =10a 0.20 v v ce(sat) i c =1.0ma, i b =100a 0.25 v v be(sat) i c =100a, i b =10a 0.70 v v be(sat) i c =1.0ma, i b =100a 0.80 v v be(on) v ce =5.0v, i c =100a 0.70 v h fe v ce =5.0v, i c =10a 100 h fe v ce =5.0v, i c =100a 150 450 h fe v ce =5.0v, i c =500a 150 450 h fe v ce =5.0v, i c =1.0ma 150 450 h fe v ce =5.0v, i c =10ma 125 f t v ce =5.0v, i c =500a, f=30mhz 30 mhz f t v ce =5.0v, i c =1.0ma, f=100mhz 100 500 mhz c ob v cb =5.0v, i e =0, f=100khz 4.0 pf c ib v be =0.5v, i c =0, f=100khz 8.0 pf 2N3810 2N3810a dual pnp silicon transistor to-78 case central semiconductor corp. tm r0 (6-november 2008) description: the central semiconductor 2N3810 and 2N3810a types are dual pnp silicon transistors manufactured by the epitaxil planar process utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications. marking: full part number
central semiconductor corp. tm to-78 case - mechanical outline 2N3810 2N3810a dual pnp silicon transistor r0 (6-november 2008) marking: full part number electrical characteristics - continued: (t a =25c unless otherwise noted) symbol test conditions min max units h ie v ce =10v, i c =1.0ma, f=1.0khz 3.0 30 h re v ce =10v, i c =1.0ma, f=1.0khz 25 x10 -4 h fe v ce =10v, i c =1.0ma, f=1.0khz 150 600 h oe v ce =10v, i c =1.0ma, f=1.0khz 5.0 60 s nf v ce =10v, i c =100a, r g =3.0k, 7.0 db f=100hz, bw=20hz matching characteristics: symbol test conditions min max units h fe1 /h fe2 (note 1) v ce =5.0v, i c =100a (2N3810) 0.90 1.0 h fe1 /h fe2 (note 1) v ce =5.0v, i c =100a (2N3810a) 0.95 1.0 i v be1 -v be2 i v ce =5.0v, i c =10a to 10ma 5.0 mv i v be1 -v be2 i v ce =5.0v, i c =100a (2N3810) 3.0 mv i v be1 -v be2 i v ce =5.0v, i c =100a (2N3810a) 1.5 mv 1) the lowest h fe reading is taken as h fe1 .
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