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| inchange semiconductor isc product specification isc silicon pnp power transistor 2SA490 description high collector current:: i c = -3a collector-emitter breakdown voltage : v (br)ceo = -40v(min) complement to type 2sc790 applications 10 watts output applications power amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -50 v v ceo collector-emitter voltage -40 v v ebo emitter-base voltage -5 v i c collector current-continuous -3 a i e emitter current-continuous 3 a p c total power dissipation @ t c =25 25 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor 2SA490 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = -50ma ; i b = 0 -40 v v (br)ebo emitter-base breakdown voltage i e = -10ma ; i c = 0 -5 v v ce (sat) collector-emitter saturation voltage i c = -2a; i b = -0.2a b -1.2 v v be (on) base-emitter on voltage i c = -2a ; v ce = -2v -1.8 v i cbo collector cutoff current v cb = -30v ; i e = 0 -10 a i ebo emitter cutoff current v eb = -5v; i c = 0 -100 a h fe-1 dc current gain i c = -0.5a ; v ce = -2v 40 240 h fe-2 dc current gain i c = -2a ; v ce = -2v 13 f t current-gain?bandwidth product i c = -0.5a ; v ce = -2v 3 mhz c ob output capacitance i e = 0; v cb = -10v; f test = 1mhz 150 pf ? h fe- 1 classifications r o y 40-80 70-140 120-240 isc website www.iscsemi.cn 2 |
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