document number: 94651 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 04-jan-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 high performance schottky generation 5.0, 2 x 10 a vs-20CUT10, vs-20cwt10fn vishay semiconductors features ? 175 c high performance schottky diode ? very low forward voltage drop ? extremely low reverse leakage ? optimized v f vs. i r trade off for high efficiency ? increased ruggedness for re verse avalanche capability ? rbsoa available ? negligible switching losses ? submicron trench technology ? compliant to rohs directive 2002/95/ec applications ? high efficiency smps ? high frequency switching ? output rectification ? reverse battery protection ? freewheeling ? dc/dc systems ? increased power density systems product summary package d-pak (to-252aa), i-pak (to-251aa) i f(av) 2 x 10 a v r 100 v v f at i f 0.66 v i rm max. 4 ma at 125 c t j max. 175 c diode variation common cathode e as 54 mj i-pak (to-251aa) d-pak (to-252aa) vs-20CUT10 vs-20cwt10fn base common cathode anode anode common cathode 4 3 2 1 base common cathode anode anode common cathode 4 3 2 1 major ratings and characteristics symbol characteristics values units v rrm 100 v v f 10 apk, t j = 125 c (typical, per leg) 0.615 v t j range - 55 to 175 c voltage ratings parameter symbol test conditions vs-20CUT10 vs-20cwt10fn units maximum dc reverse voltage v r t j = 25 c 100 v
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94651 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 04-jan-11 vs-20CUT10, vs-20cwt10fn vishay semiconductors high performance schottky generation 5.0, 2 x 10 a note (1) pulse width < 300 s, duty cycle < 2 % absolute maximum ratings parameter symbol test conditions values units maximum average forward current per leg i f(av) 50 % duty cycle at t c = 159 c, rectan gular waveform 10 a per device 20 maximum peak one cycle non-repetitive surge current per leg i fsm 5 s sine or 3 s rect. pulse following any rated load condition and with rated v rrm applied 610 a 10 ms sine or 6 ms rect. pulse 110 non-repetitive avalanche energy per leg e as t j = 25 c, i as = 3 a, l = 12 mh 54 mj repetitive avalanche current per leg i ar limited by frequency of operation and time pulse duration so that t j < t j max. i as at t j max. as a function of time pulse (see fig. 8) i as at t j max. a electrical specifications parameter symbol test condi tions typ. max. units forward voltage drop per leg v fm (1) 10 a t j = 25 c 0.735 0.810 v 20 a 0.840 0.890 10 a t j = 125 c 0.615 0.660 20 a 0.730 0.770 reverse leakage current per leg i rm (1) t j = 25 c v r = rated v r -50a t j = 125 c - 4 ma junction capacitance per leg c t v r = 5 v dc (test signal range 100 khz to 1 mhz), 25 c 400 - pf series inductance per leg l s measured lead to lead 5 mm from package body 8.0 - nh maximum voltage rate of change dv/dt rated v r - 10 000 v/s thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 55 to 175 c maximum thermal resistance, junction to case per leg r thjc dc operation 2 c/w maximum thermal resistance, junction to ca se per device 1 typical thermal resistance, case to heatsink r thcs 0.3 approximate weight 0.3 g 0.01 oz. marking device case style i-pak 20CUT10 case style d-pak 20cwt10fn
document number: 94651 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 04-jan-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 vs-20CUT10, vs-20cwt10fn high performance schottky generation 5.0, 2 x 10 a vishay semiconductors fig. 1 - maximum forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics forward voltage drop - v fm (v) instantaneous forward current - i f (a) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1 10 100 tj = 25c tj = 125c tj = 175c reverse current - i r (ma) reverse voltage - v r (v) 0 2040608010 0 0.0001 0.001 0.01 0.1 1 10 100 75c 100c 50c 125c 150c 175c 25c reverse voltage - v r (v) junction capacitance - c t (pf) 0 20 40 60 80 100 10 100 1000 t 1 , rectangular pulse duration (seconds) thermal impedance z thjc (c/w) 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 0.01 0.1 1 10 single pulse (thermal resistance) d = 0.2 d = 0.25 d = 0.33 d = 0.5 d = 0.75
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94651 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 04-jan-11 vs-20CUT10, vs-20cwt10fn vishay semiconductors high performance schottky generation 5.0, 2 x 10 a fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - maximum non- repetitive surge current note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 80 % rated v r average forward current - i f (av) (a) allowable case temperature (c) 0 2 4 6 8 10 12 14 16 145 150 155 160 165 170 175 180 dc square wave (d=0.50) 80% rated vr applied see note (1) average forward current - i f (av) (a) average power loss - (watts) 03691215 0 2 4 6 8 10 180 120 90 60 30 dc rms limit square wave pulse duration - t p (microsec) non-repetitive surge current - i fsm (a) 10 100 1000 10000 10 100 1000
document number: 94651 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 04-jan-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 vs-20CUT10, vs-20cwt10fn high performance schottky generation 5.0, 2 x 10 a vishay semiconductors fig. 8 - reverse bias safe operating area (avalanche current vs. rectangular pulse duration) fig. 9 - reverse bias safe operating area (avalanche energy vs. rectangular pulse duration) 0 0 1 0 1 1 1 10 100 tj = 25c tj = 125c tj = 175c rectangular pulse duration ( sec) avalanche current (a) 0 0 1 0 1 1 1 10 100 tj = 25c tj = 125c tj = 175c rectangular pulse duration ( sec) avalanche energy (mj)
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94651 6 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 04-jan-11 vs-20CUT10, vs-20cwt10fn vishay semiconductors high performance schottky generation 5.0, 2 x 10 a ordering information table links to related documents dimensions www.vishay.com/doc?95024 part marking information www.vishay.com/doc?95025 packaging information www.vishay.com/doc?95033 spice model www.vishay.com/doc?95041 2 - current rating (20 a) 1 - vishay semiconductors product 5 - t = trench 6 - voltage rating (10 = 100 v) 4 - package: u = i-pak w = d-pak 3 - circuit configuration: c = common cathode 8 - d-pak, i-pak: none = tube (75 pieces) d-pak only: tr = tape and reel trl = tape and reel (left oriented) trr = tape and reel (right oriented) 7 - to-252aa (d-pak) device code 5 1 3 2 4 6 7 8 vs- 20 c u t 10 fn trl
document number: 95024 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 05-jan-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 i-pak - s, d-pak outline dimensions vishay semiconductors dimensions for i-pak - s in millimeters symbol dimensional requirements min. nom. max. e 6.40 6.60 6.70 l 3.98 4.13 4.28 l4 0.66 0.76 0.86 l5 1.96 2.16 2.36 d 6.00 6.10 6.20 h 11.05 11.25 11.45 b 0.64 0.76 0.88 b2 0.77 0.84 1.14 b3 5.21 5.34 5.46 b4 0.41 0.51 0.61 e 2.286 bsc a 2.20 2.30 2.38 c 0.40 0.50 0.60 c2 0.40 0.50 0.60 d1 5.30 - - e1 4.40 - - e d l5 l4 ee a c2 l c h d1 1 2 3 4 b b3 b2 b3 e1
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 95024 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 05-jan-11 outline dimensions vishay semiconductors i-pak - s, d-pak dimensions for d-pak in millimeters and inches notes (1) dimensioning and toleranc ing as per asme y14.5m-1994 (2) lead dimension uncontrolled in l5 (3) dimension d1, e1, l3 and b3 establish a minimum mounting surface for thermal pad (4) section c - c dimension apply to the flat section of the lead between 0.13 and 0. 25 mm (0.005 and 0.10") from the lead tip (5) dimension d, and e do not includ e mold flash. mold flash shall not exceed 0.127 mm (0.005") per side. th ese dimensio ns are meas ured at the outermost extremes of the plastic body (6) dimension b1 and c1 appl ied to base metal only (7) datum a and b to be determined at datum plane h (8) outline conforms to jedec outline to-252aa symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 2.18 2.39 0.086 0.094 e 2.29 bsc 0.090 bsc a1 - 0.13 - 0.005 h 9.40 10.41 0.370 0.410 b 0.64 0.89 0.025 0.035 l 1.40 1.78 0.055 0.070 b2 0.76 1.14 0.030 0.045 l1 2.74 bsc 0.108 ref. b3 4.95 5.46 0.195 0.215 3 l2 0.51 bsc 0.020 bsc c 0.46 0.61 0.018 0.024 l3 0.89 1.27 0.035 0.050 3 c2 0.46 0.89 0.018 0.035 l4 - 1.02 - 0.040 d 5.97 6.22 0.235 0.245 5 l5 1.14 1.52 0.045 0.060 2 d1 5.21 - 0.205 - 3 ? 0 10 0 10 e 6.35 6.73 0.250 0.265 5 ?1 0 15 0 15 e1 4.32 - 0.170 - 3 ?2 25 35 25 35 ? 1 e (5) b3 (3) 0.010 cab l3 (3) b a c h c l2 d (5) l4 b 2 x e b2 (2) l5 1 2 3 4 ? 2 a c2 a a h seating plane c detail ?c? (7) seating plane a1 detail ?c? rotated 90 cw scale: 20:1 (l1) c c l ? gauge plane lead tip m 0.010 cab m 32 4 1 e1 d1 min. 0.265 (6.74) min. 0.245 (6.23) min. 0.089 (2.28) min. 0.06 (1.524) 0.488 (12.40) 0.409 (10.40) 0.093 (2.38) 0.085 (2.18) pad layout
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