silicon planar epitaxial npn transistor semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8877 issue 1 page 1 of 3 2N3440C3 high voltage hermetic ceramic surface mount package. ideally suited for drivers in high-voltage low curr ent inverters, switching and series regulators. screening options available absolute maximum ratings (t a = 25c unless otherwise stated) v cbo collector ? base voltage 300v v ceo collector ? emitter voltage 250v v ebo emitter ? base voltage 7v i c collector current ? continuous 1.0a i b base current 0.5a p d total power dissipation at t a = 25c 500mw derate above 25c 2.9mw/c t j junction temperature range -65 to +200c t stg storage temperature range -65 to +200c thermal properties symbols parameters min. typ. max. units r ja thermal resistance, junction to ambient 350 c/w r jsp thermal resistance, junction to solder pads 120 c/w
silicon planar epitaxial npn transistor 2N3440C3 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8877 issue 1 page 2 of 3 electrical characteristics (t a = 25c unless otherwise stated) symbols parameters test conditions min. typ max. units i ceo collector cut-off current v ce = 200v i b = 0 2 v cb = 300v i e = 0 5 v cb = 250v i e = 0 2 i cbo collector cut-off current t a = 150c 10 i cex collector cut-off current v ce = 300v v be = -1.5v 5 i ebo emitter cut-off current v eb = 7v i c = 0 10 a v ce(sat) (1) collector-emitter saturation voltage i c = 50ma i b = 4ma 0.5 v be(sat) (1) base-emitter saturation voltage i c = 50ma i b = 4ma 1.3 v i c = 0.2ma v ce = 10v 10 i c = 2ma v ce = 10v 30 i c = 20ma v ce = 10v 40 160 h fe (1) forward-current transfer ratio t a = -55c 15 dynamic characteristics i c = 5ma v ce = 10v h fe small signal forward-current transfer ratio f = 1.0khz 25 - i c = 10ma v ce = 10v | h fe | magnitude of common- emitter small-signal short- circuit forward current, transfer ratio f = 5mhz 3 15 mhz v cb = 10v i e = 0 c obo output capacitance f = 1.0mhz 10 pf v eb = 5v i c = 0 c ibo input capacitance f = 1.0mhz 75 pf i c = 20ma v cc = 200v t on turn-on time i b1 = 2ma 1.0 i c = 20ma v cc = 200v t off turn-off time i b1 = - i b2 = 2ma 10 s notes notes notes notes (1) pulse width 300us, 2%
silicon planar epitaxial npn transistor 2N3440C3 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8877 issue 1 page 3 of 3 mechanical data dimensions in mm (inches) lcc3 (mo - 041ba) underside view pad 1 ? collector pad 2 ? n/c pad 3 ? base pad 4 - emitter 1 2 34 5.59 0.13 (0.22 0.005) 0.23 (0.009) rad. 1.02 0.20 (0.04 0.008) 2.03 0.20 (0.08 0.008) 1.40 0.15 (0.055 0.006) 0.25 0.03 (0.01 0.001) 0.23 (0.009) min. 1 . 27 0 . 05 ( 0 . 05 0 . 002 ) 3 . 81 0 . 13 ( 0 . 15 0 . 005 ) 0 . 64 0 . 08 ( 0 . 025 0 . 003 )
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