4v drive nch mosfet RP1E070XN ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) low on-resistance. 2) built-in g-s protection diode. 3) small surface mount package (mpt6). ? application switching ? packaging specifications ? inner circuit package taping code tr basic ordering unit (pieces) 1000 RP1E070XN ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss 30 v gate-source voltage v gss ? 20 v continuous i d ? 7a pulsed i dp ? 18 a continuous i s 1.6 a pulsed i sp 18 a power dissipation p d 2.0 w channel temperature tch 150 ? c range of storage temperature tstg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 mounted on a ceramic board. ? thermal resistance symbol limits unit channel to ambient rth (ch-a) 62.5 ? c / w *mounted on a ceramic board. parameter type source current (body diode) drain current parameter * *2 *1 *1 mpt6 (single) (1) (2) (3) (6) (5) (4) (1) source (2) source (3) gate (4) drain (5) drain ( 6 ) drain ?1 esd protection diode ?2 body diode ?2 ?1 (6) (5) (1) (2) (3) (4) 1/6 2011.02 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RP1E070XN ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 20v, v ds =0v drain-source breakdown voltage v (br)dss 30 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --1 ? av ds =30v, v gs =0v gate threshold voltage v gs (th) 1.0 - 2.5 v v ds =10v, i d =1ma -2028 i d =7a, v gs =10v -2535 i d =7a, v gs =4.5v -2839 i d =7a, v gs =4.0v forward transfer admittance l y fs l 4.5 - - s i d =7a, v ds =10v input capacitance c iss - 390 - pf v ds =10v output capacitance c oss - 150 - pf v gs =0v reverse transfer capacitance c rss - 70 - pf f=1mhz turn-on delay time t d(on) -7-nsi d =3.5a, v dd 15v rise time t r - 30 - ns v gs =10v turn-off delay time t d(off) - 30 - ns r l =4.3 ? fall time t f -8-nsr g =10 ? total gate charge q g - 5.8 - nc i d =7a, v dd 15v gate-source charge q gs - 1.5 - nc v gs =5v gate-drain charge q gd - 2.3 - nc *pulsed ? body diode characteristics (source-drain) (ta = 25 ?c) symbol min. typ. max. unit forward voltage v sd - - 1.2 v i s =7a, v gs =0v *pulsed conditions conditions m ? parameter parameter static drain-source on-state resistance r ds (on) * * * * * * * * * * 2/6 2011.02 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RP1E070XN ? electrical characteristic curves (ta=25 ? c) 0 1 2 3 4 5 6 7 0 0.2 0.4 0.6 0.8 1 v gs = 2.5v v gs = 10v v gs = 4.5v v gs = 4.0v v gs = 2.8v ta=25 c pulsed fig.1 typical output characteristics( ) drain current : i d [a] drain - source voltage : v ds [v] 0 1 2 3 4 5 6 7 0 2 4 6 8 10 v gs = 10v v gs = 4.5v v gs = 4.0v v gs = 2.5v v gs = 2.8v ta=25 c pulsed fig.2 typical output characteristics( ) drain - source voltage : v ds [v] drain current : i d [a] 0.001 0.01 0.1 1 10 0 1 2 3 v ds = 10v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.3 typical transfer characteristics drain current : i d [a] gate - source voltage : v gs [v] 1 10 100 1000 0.1 1 10 v gs = 4.0v v gs = 4.5v v gs = 10v ta=25 c pulsed fig.4 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds (on)[m ? ] 1 10 100 1000 0.1 1 10 v gs = 10v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.5 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds (on)[m ? ] 1 10 100 1000 0.1 1 10 v gs = 4.5v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.6 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds (on)[m ? ] 3/6 2011.02 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RP1E070XN 1 10 100 1000 0.1 1 10 v gs = 4.0v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.7 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds (on)[m ? ] 0.1 1 10 100 0.01 0.1 1 10 v ds = 10v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.8 forward transfer admittance vs. drain current forward transfer admittance : |yfs| [s] drain - current : i d [a] 0.01 0.1 1 10 0 0.5 1 1.5 v gs =0v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.9 reverse drain current vs. sourse - drain voltage source current : is [a] source - drain voltage : v sd [v] 0 10 20 30 40 50 0 2 4 6 8 10 ta=25 c pulsed i d = 7.0a i d = 3.5a fig.10 static drain - source on - state resistance vs. gate source voltage static drain - source on - state resistance : r ds (on)[m ? ] gate - source voltage : v gs [v] 1 10 100 1000 0.01 0.1 1 10 t f t d(on) t d(off) ta=25 c v dd = 15v v gs =10v r g =10 pulsed t r fig.11 switching characteristics switching time : t [ns] drain - current : i d [a] 0 2 4 6 8 10 0 2 4 6 8 10 12 ta=25 c v dd = 15v i d = 7a pulsed fig.12 dynamic input characteristics gate - source voltage : v gs [v] total gate charge : qg [nc] 4/6 2011.02 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RP1E070XN 10 100 1000 10000 0.01 0.1 1 10 100 c iss c rss ta=25 c f=1mhz v gs =0v c oss fig.13 typical capacitance vs. drain - source voltage drain - source voltage : v ds [v] capacitance : c [pf] 0.01 0.1 1 10 100 1000 0.1 1 10 100 p w = 10ms dc operation operation in this area is limited by r ds(on) (v gs =10v) p w =100us p w =1ms ta=25 c single pulse mounted on a ceramic board. (30mm 30mm 0.8mm) fig.14 maximum safe operating aera drain - source voltage : v ds [v] drain current : i d (a) 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 mounted on a ceramic board. (30mm 30mm 0.8mm) rth (ch - a) =62.5 c /w rth (ch - a) (t)=r(t) rth (ch - a) ta=25 c single pulse fig.15 normalized transient thermal resistance vs. pulse width pulse width : pw(s) normarized transient thermal resistance : r (t) 5/6 2011.02 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RP1E070XN ? measurement circuits ? notice this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit. v gs r g v d s d.u.t. i d r l v dd 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) v g v gs charge q g q gs q gd v gs i g(const.) v d s d.u.t. i d r l v dd fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform 6/6 2011.02 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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