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| 1. product profile 1.1 general description extremely low level n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology. this product is designed and qualified for use in computing, communications, consum er and industrial applications only. 1.2 features and benefits 1.3 applications 1.4 quick reference data PMF370XN n-channel trenchmos extremely low level fet rev. 03 ? 20 june 2008 product data sheet ? low conduction losses due to low on-state resistance ? low threshold voltage ? saves pcb space due to small footprint (40 % smaller than sot23) ? suitable for low gate drive sources ? surface-mounted package ? driver circuits ? switching in portable appliances table 1. quick reference symbol parameter conditions min typ max unit v ds drain-source voltage t j 25 c; t j 150 c --30v i d drain current t sp =25 c; v gs =4.5v; see figure 1 and 3 --0.87a p tot total power dissipation t sp =25 c; see figure 2 --0.56w static characteristics r dson drain-source on-state resistance v gs =4.5v; i d =0.2a; t j =25 c; see figure 9 and 10 - 370 440 m
PMF370XN_3 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 03 ? 20 june 2008 2 of 12 nxp semiconductors PMF370XN n-channel trenchmos extremely low level fet 2. pinning information 3. ordering information 4. limiting values table 2. pinning pin symbol description simplified outline graphic symbol 1 g gate sot323 (sc-70) 2 s source 3 d drain 12 3 s d g m bb076 table 3. ordering information type number package name description version PMF370XN sc-70 plastic surface-mounted package; 3 leads sot323 table 4. limiting values in accordance with the absolute ma ximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage t j 25 c; t j 150 c-30v v dgr drain-gate voltage t j 150 c; t j 25 c; r gs =20k -30v v gs gate-source voltage -12 12 v i d drain current t sp =25 c; v gs = 4.5 v; see figure 1 and 3 -0.87a t sp =100 c; v gs = 4.5 v; see figure 1 -0.55a i dm peak drain current t sp =25 c; t p 10 s; pulsed; see figure 3 -1.74a p tot total power dissipation t sp =25 c; see figure 2 -0.56w t stg storage temperature -55 150 c t j junction temperature -55 150 c source-drain diode i s source current t sp =25 c - 0.47 a i sm peak source current t sp =25 c; t p 10 s; pulsed - 0.94 a PMF370XN_3 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 03 ? 20 june 2008 3 of 12 nxp semiconductors PMF370XN n-channel trenchmos extremely low level fet fig 1. normalized continuous drain current as a function of solder point temperature fig 2. normalized total power dissipation as a function of solder point temperature fig 3. safe operating area; continuous and peak drain currents as a function of drain-source voltage t sp ( c) 0 200 150 50 100 03aa25 40 80 120 i der (%) 0 t sp ( c) 0 200 150 50 100 03aa17 40 80 120 p der (%) 0 i der = i d i d ( 25 c ) 100 % p der = p tot p tot ( 25 c ) 100 % 03an15 10 -2 10 -1 1 10 10 -1 1 10 10 2 v ds (v) i d (a) dc 10 ms limit r dson = v ds / i d 1 ms t p = 10 s 100 ms 100 s t sp =25 c ; i dm is single pulse; v gs = 4.5 v PMF370XN_3 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 03 ? 20 june 2008 4 of 12 nxp semiconductors PMF370XN n-channel trenchmos extremely low level fet 5. thermal characteristics 6. characteristics table 5. thermal characteristics symbol parameter conditions min typ max unit r th(j-sp) thermal resistance from junction to solder point see figure 4 - - 220 k/w fig 4. transient thermal impedance from junction to solder point as a function of pulse duration 03an27 1 10 10 2 10 3 10 -4 10 -3 10 -2 10 -1 1 10 t p (s) z th(j-sp) (k/w) single pulse = 0.5 0.2 0.1 0.05 0.02 t p t p t t p t = table 6. characteristics symbol parameter conditions min typ max unit static characteristics v (br)dss drain-source breakdown voltage i d =1 a; v gs =0v; t j =-55 c27 - - v i d =1 a; v gs =0v; t j =25 c30 - - v v gs(th) gate-source threshold voltage i d =0.25ma; v ds = v gs ; t j =-55 c; see figure 7 --1.8v i d =0.25ma; v ds = v gs ; t j = 150 c; see figure 7 and 8 0.35 - - v i d =0.25ma; v ds = v gs ; t j =25 c; see figure 7 and 8 0.51 1.5v i dss drain leakage current v ds =30v; v gs =0v; t j =25 c- - 1 a v ds =30v; v gs =0v; t j =70 c- - 2 a v ds =30v; v gs =0v; t j = 150 c --10 a i gss gate leakage current v gs =12v; v ds =0v; t j =25 c- 10 100 na v gs =-12v; v ds =0v; t j =25 c - 10 100 na PMF370XN_3 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 03 ? 20 june 2008 5 of 12 nxp semiconductors PMF370XN n-channel trenchmos extremely low level fet r dson drain-source on-state resistance v gs =2.5v; i d =0.1a; t j =25 c; see figure 9 and 10 - 550 650 m v gs =4.5v; i d =0.2a; t j = 150 c; see figure 10 - 629 748 m v gs =4.5v; i d =0.2a; t j =25 c; see figure 9 and 10 - 370 440 m dynamic characteristics q g(tot) total gate charge i d =1a; v ds =15v; v gs =4.5v; t j =25 c; see figure 11 and 12 -0.65-nc q gs gate-source charge - 0.14 - nc q gd gate-drain charge - 0.18 - nc c iss input capacitance v ds =25v; v gs =0v; f=1mhz; t j =25 c; see figure 13 -37-pf c oss output capacitance - 8.5 - pf c rss reverse transfer capacitance -5.5-pf t d(on) turn-on delay time r g(ext) =6 ; r l =15 ; v ds =15v; v gs =4.5v; t j =25 c -6.5-ns t r rise time - 9.5 - ns t d(off) turn-off delay time - 14 - ns t f fall time - 5.5 - ns source-drain diode v sd source-drain voltage i s = 0.3 a; v gs =0v; t j =25 c; see figure 14 -0.811.2v table 6. characteristics ?continued symbol parameter conditions min typ max unit fig 5. output characteristics: drain current as a function of drain-source voltage; typical values fig 6. transfer characteristics: drain current as a function of gate-source voltage; typical values v ds (v) 02 1.5 0.5 1 03ao00 1 1.5 0.5 2 2.5 i d (a) 0 3 2 . 5 1 . 8 3 . 5 2 v gs (v) = 4 . 5 v gs (v) 05 4 23 1 03ao02 1 1.5 0.5 2 2.5 i d (x) 0 25 c tj = 150 c t j =25 c t j =25 c and 150 c ; v ds > i d r dson PMF370XN_3 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 03 ? 20 june 2008 6 of 12 nxp semiconductors PMF370XN n-channel trenchmos extremely low level fet fig 7. gate-source threshold voltage as a function of junction temperature fig 8. subthreshold drain current as a function of gate-source voltage fig 9. drain-source on-state resistance as a function of drain current; typical values fig 10. normalized drain-source on-state resistance factor as a function of junction temperature t j ( c) ? 60 180 120 060 03al82 1 0.5 1.5 2 v gs (th) (v) 0 max min typ 03an65 10 ? 4 10 ? 5 10 ? 3 i d (a) 10 ? 6 v gs (v) 0 1.6 1.2 0.4 0.8 min typ max i d = 0.25 a ; v ds = v gs t j =25 c ; v ds =5 v i d (a) 0 2.5 2 1 1.5 0.5 03ao01 0.4 0.6 0.2 0.8 1 r dson ( ) 0 v gs (v) = 2 . 5 3 3 . 5 4 . 5 t j ( c) ? 60 180 120 060 03al00 0.6 1.2 1.8 a 0 t j =25 c a = r dson r dson ( 25 c ) PMF370XN_3 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 03 ? 20 june 2008 7 of 12 nxp semiconductors PMF370XN n-channel trenchmos extremely low level fet fig 11. gate charge waveform definitions fig 12. gate-source voltage as a function of gate charge; typical values fig 13. input, output and reverse transfer capacitances as a function of drain-source voltage; typical values fig 14. source current as a function of source-drain voltage; typical values 003aaa50 8 v gs v gs(th) q gs1 q gs2 q gd v ds q g(tot) i d q gs v gs(pl) q g (nc) 0 0.8 0.6 0.2 0.4 03ao05 2 3 1 4 5 v gs (v) 0 i d = 1 a t j = 25 c v ds = 15 v i d =1 a ; v ds =15 v 03ao04 v ds (v) 10 ? 1 10 2 10 1 10 10 2 c (pf) 1 c iss c oss c rss v sd (v) 01 0.8 0.4 0.6 0.2 03ao03 0.4 0.6 0.2 0.8 1 i s (a) 0 v gs = 0 v 150 ct j = 25 c v gs =0 v ; f =1 mhz t j =25 c and 150 c ; v gs =0 v PMF370XN_3 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 03 ? 20 june 2008 8 of 12 nxp semiconductors PMF370XN n-channel trenchmos extremely low level fet 7. package outline fig 15. package outline sot323 (sc-70) unit a 1 max b p cd e e 1 h e l p qw v references outline version european projection issue date iec jedec jeita mm 0.1 1.1 0.8 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 0.65 e 1.3 2.2 2.0 0.23 0.13 0.2 0.2 dimensions (mm are the original dimensions) 0.45 0.15 sot323 sc-70 w m b p d e 1 e a b a 1 l p q detail x c h e e v m a a b y 0 1 2 mm scale a x 12 3 plastic surface-mounted package; 3 leads sot323 04-11-04 06-03-16 PMF370XN_3 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 03 ? 20 june 2008 9 of 12 nxp semiconductors PMF370XN n-channel trenchmos extremely low level fet 8. soldering fig 16. sot323 (sc-70) solder lands solder resist occupied area solder paste sot323_ fr 2.65 2.35 0.6 (3 ) 0.5 (3 ) 0.55 (3 ) 1.325 1.85 1.3 3 2 1 dimensions in mm PMF370XN_3 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 03 ? 20 june 2008 10 of 12 nxp semiconductors PMF370XN n-channel trenchmos extremely low level fet 9. revision history table 7. revision history document id release date data sheet status change notice supersedes PMF370XN_3 20080620 product data sheet - PMF370XN_2 modifications: ? the format of this data sheet has been redesigned to comply with the new identity guidelines of nxp semiconductors. ? legal texts have been adapted to the new company name where appropriate PMF370XN_2 20051206 product data sheet - PMF370XN-01 PMF370XN-01 20040211 product data sheet - - PMF370XN_3 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 03 ? 20 june 2008 11 of 12 nxp semiconductors PMF370XN n-channel trenchmos extremely low level fet 10. legal information 10.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 10.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 10.3 disclaimers general ? information in this document is believed to be accurate and reliable. however, nxp semiconductors d oes not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comp lete, exhaustive or legally binding. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale ? nxp semiconductors products are sold subject to the general terms and condit ions of commercial sale, as published at http://www.nxp.com/profile/terms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writ ing by nxp semiconductors. in case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. 10.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. trenchmos ? is a trademark of nxp b.v. 11. contact information for additional information, please visit: http://www.nxp.com for sales office addresses, send an email to: salesaddresses@nxp.com document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this docu ment contains the product specification. nxp semiconductors PMF370XN n-channel trenchmos extremely low level fet ? nxp b.v. 2008. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 20 june 2008 document identifier: PMF370XN_3 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 12. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics . . . . . . . . . . . . . . . . . . 4 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 8 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 10 legal information. . . . . . . . . . . . . . . . . . . . . . . 11 10.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 10.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 10.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 10.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 11 contact information. . . . . . . . . . . . . . . . . . . . . 11 12 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 |
Price & Availability of PMF370XN
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