SI9934DY vishay siliconix document number: 70163 s-49532erev. e, 02-feb-98 www.vishay.com faxback 408-970-5600 1 dual p-channel 2.5-v (g-s) mosfet v ds (v) r ds(on) ( ) i d (a) 12 0.05 @ v gs = 4.5 v 5 12 0.074 @ v gs = 2.5 v 4.1 s 1 d 1 g 1 d 1 s 2 d 2 g 2 d 2 so-8 5 6 7 8 top view 2 3 4 1 s 1 g 1 d 1 d 1 p-channel mosfet s 2 g 2 d 2 d 2 p-channel mosfet
parameter symbol limit unit drain-source voltage v ds 12 v gate-source voltage v gs 8 v continuous drain current (t j = 150 c) a t a = 25 c i d 5 a continuous drain current (t j = 150 c) a t a = 70 c i d 4.0 a pulsed drain current i dm 20 a continuous source current (diode conduction) a i s 1.7 maximum power dissipation a t a = 25 c p d 2.0 w maximum power dissipation a t a = 70 c p d 1.3 w operating junction and storage temperature range t j , t stg 55 to 150 c
parameter symbol limit unit maximum junction-to-ambient a r thja 62.5 c/w notes a. surface mounted on fr4 board, t 10 sec. for spice model information via the worldwide web: http://www.vishay.com/www/product/spice.htm
SI9934DY vishay siliconix www.vishay.com faxback 408-970-5600 2 document number: 70163 s-49532erev. e, 02-feb-98
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