cmpt6427 surface mount npn silicon darlington transistor description: the central semiconductor cmpt6427 type is a npn silicon darlington transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high gain. marking code: c1v maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 40 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 12 v continuous collector current i c 500 ma power dissipation p d 350 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 357 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min max units i cbo v cb =30v 50 na i ceo v ce =25v 1.0 a i ebo v be =10v 50 na bv cbo i c =100a 40 v bv ceo i c =10ma 40 v bv ebo i e =10a 12 v v ce(sat) i c =50ma, i b =0.5ma 1.20 v v ce(sat) i c =500ma, i b =0.5ma 1.50 v v be(sat) i c =500ma, i b =0.5ma 2.00 v v be(on) v ce =5.0v, i c =50ma 1.75 v h fe v ce =5.0v, i c =10ma 10k 100k h fe v ce =5.0v, i c =100ma 20k 200k h fe v ce =5.0v, i c =500ma 14k 140k f t v ce =5.0v, i c =10ma, f=100mhz 130 mhz c ob v cb =10v, i e =0, f=1.0mhz 7.0 pf c ib v be =0.5v, i c =0, f=1.0mhz 15 pf nf v ce =5.0v, i c =1.0ma, r s =100k, f=1.0khz to 15.7khz 10 db sot-23 case r6 (1-february 2010) www.centralsemi.com
cmpt6427 surface mount npn silicon darlington transistor lead code: 1) base 2) emitter 3) collector marking code: c1v sot-23 case - mechanical outline www.centralsemi.com r6 (1-february 2010)
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