inchange semiconductor isc product specification isc silicon pnp power transistor BD744 description collector-emitter breakdown voltage- : v (br)ceo = -45v(min) collector power dissipation- : p c = 90w@ i c = 25 15a continuous collector current complement to type bd743 applications designed for use in general purpose power amplifier and switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -50 v v ceo collector-emitter voltage -45 v v ebo emitter-base voltage -5 v i c collector current-continuous -15 a i cm collector current-peak -20 a i b b base current-continuous -5 a collector power dissipation @ t a =25 2 p c collector power dissipation @ t c =25 90 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.4 /w r th j-a thermal resistance, junction to ambient 62.5 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor BD744 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v (br)ceo collector-emitter breakdown voltage i c = -30ma; i b = 0 -45 v v ce( sat )-1 collector-emitter saturation voltage i c = -5a; i b = -0.5a b -1.0 v v ce( sat )-2 collector-emitter saturation voltage i c = -15a; i b = -5a -3.0 v v be( on )-1 base-emitter on voltage i c = -5a ; v ce = -4v -1.0 v v be( on )-2 base-emitter on voltage i c = -15a ; v ce = -4v -3.0 v v cb = -50v; i e = 0 -0.1 i cbo collector cutoff current v cb = -50v; i e = 0; t c = 125 -5.0 ma i ceo collector cutoff current v ce = -30v; i b = 0 b -0.1 ma i ebo emitter cutoff current v eb = -5v; i c = 0 -0.5 ma h fe-1 dc current gain i c = -1a ; v ce = -4v 40 h fe-2 dc current gain i c = -5a ; v ce = -4v 20 150 h fe-3 dc current gain i c = -15a ; v ce = -4v 5 switching times t d delay time 20 ns t r rise time 120 ns t s storage time 600 ns t f fall time i c = -5a; i b1 = -i b2 = -5a; v be(off) = 4.2v; rl= 6 ; t p = 20 s,dutycycle 2% 300 ns isc website www.iscsemi.cn 2
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