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| inchange semiconductor isc product specification isc silicon npn power transistor 2SC2707 description collector-emitter breakdown voltage- : v (br)ceo = 180v(min.) high power dissipation complement to type 2sa1147 applications designed for power switching amplifier and general purpose applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 180 v v ceo collector-emitter voltage 180 v v ebo emitter-base voltage 5 v i c collector current-continuous 15 a i b b base current-continuous 5 a p c collector power dissipation @t c =25 150 w t j junction temperature 150 t stg storage temperature -65~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC2707 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 50ma; i b = 0 180 v v (br)cbo collector-base breakdown voltage i c = 1ma; i e = 0 180 v v (br)ebo emitter-base breakdown voltage i e = 1ma; i c = 0 5 v v ce (sat) collector-emitter saturation voltage i c = 10a; i b = 1a 3.0 v i cbo collector cutoff current v cb = 180v; i e = 0 100 a i ebo emitter cutoff current v eb = 5v; i c = 0 100 a h fe-1 dc current gain i c = 1a ; v ce = 5v 55 160 h fe-2 dc current gain i c = 5a ; v ce = 5v 30 f t current-gain?bandwidth product i c = 0.5a; v ce = 12v 80 mhz isc website www.iscsemi.cn |
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