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| inchange semiconductor product specification silicon pnp power transistors 2SB1390 description with to-220fa package high dc current gain fig.1 simplified outline (to-220fa) and symbol low saturation voltage darlington applications for use in low frequency power amplifier applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -60 v v ceo collector -emitter voltage open base -60 v v ebo emitter-base voltage open collector -7 v i c collector current -8 a i cm collector current-peak -12 a t a =25 2 p c collector power dissipation t c =25 25 w t j junction temperature 150 t stg storage temperature -55~150
inchange semiconductor product specification silicon pnp power transistors 2SB1390 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-25ma; r be = -60 v v (br)cbo collector-base breakdown voltage i c =-100 a; i e =0 -60 v v (br)ebo emitter-base breakdown voltage i e =-50ma; i c =0 -7 v v cesat-1 collector-emitter saturation voltage i c =-4a ;i b =-8ma b -1.5 v v cesat-2 collector-emitter saturation voltage i c =-8a ;i b =-80ma b -3.0 v v besat-1 base-emitter saturation voltage i c =-4a ;i b =-8ma b -2.0 v v besat-2 base-emitter saturation voltage i c =-8a ;i b =-80ma b -3.5 v i cbo collector cut-off current v cb =-50v; i e =0 -10 a i ceo collector cut-off current v ce =-50v; r be = -10 a h fe dc current gain i c =-4a ; v ce =-3v 1000 20000 v d diode forward voltage i d =8a 3.0 v 2 inchange semiconductor product specification silicon pnp power transistors 2SB1390 package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm) 3 |
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