SQJ963EP www.vishay.com vishay siliconix s11-1372-rev. a, 18-jul-11 1 document number: 67581 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 automotive dual p-channel 60 v (d-s) 175 c mosfet features ? halogen-free according to iec 61249-2-21 definition ?trenchfet ? power mosfet ? aec-q101 qualified d ?100 % r g and uis tested ? compliant to rohs directive 2002/95/ec notes a. package limited. b. pulse test; pulse width ? 300 s, duty cycle ? 2 %. c. when mounted on 1" squa re pcb (fr4 material). d. parametric verification ongoing. e. see solder profile ( www.vishay.com/ppg?73257 ). the powerpak so-8l. the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. a solder fill et at the exposed copper tip cannot be guaranteed and is not r equired to ensure adequate bottom side solder interconnection. f. rework conditions: manual soldering with a soldering iron is not recommended for leadless components. product summary v ds (v) - 60 r ds(on) ( ? ) at v gs = - 10 v 0.085 r ds(on) ( ? ) at v gs = - 4.5 v 0.115 i d (a) per leg - 8 configuration dual 4 3 2 1 6.15 mm 5.13 mm bottom view powerpak ? so-8l dual g 2 s 2 g 1 s 1 d 2 d 1 s 1 g 1 d 1 p-channel mosfet s 2 g 2 d 2 p-channel mosfet ordering information package powerpak so-8l lead (pb)-free and halo gen-free SQJ963EP-t1-ge3 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds - 60 v gate-source voltage v gs 20 continuous drain current t c = 25 c a i d - 8 a t c = 125 c - 7 continuous source curr ent (diode conduction) a i s - 8 pulsed drain current b i dm - 25 single pulse avalanche current l = 0.1 mh i as - 20 single pulse avalanche energy e as 20 mj maximum power dissipation b t c = 25 c p d 27 w t c = 125 c 9 operating junction and storage temperature range t j , t stg - 55 to + 175 c soldering recommendations (peak temperature) e, f 260 thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount c r thja 85 c/w junction-to-case (drain) r thjc 5.5
SQJ963EP www.vishay.com vishay siliconix s11-1372-rev. a, 18-jul-11 2 document number: 67581 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design , not subject to production testing. c. independent of operating temperature. stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operatio nal sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. specifications (t c = 25 c, unless otherwise noted) parameter symbol test condi tions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 60 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1.5 - 2.0 - 2.5 gate-source leakage i gss v ds = 0 v, v gs = 20 v - - 100 na zero gate voltage drain current i dss v gs = 0 v v ds = - 60 v - - - 1 a v gs = 0 v v ds = - 60 v, t j = 125 c - - - 50 v gs = 0 v v ds = - 60 v, t j = 175 c - - - 150 on-state drain current a i d(on) v gs = - 10 v v ds ? - 5 v - 12 - - a drain-source on-state resistance a r ds(on) v gs = - 10 v i d = - 3.5 a - 0.067 0.085 ? v gs = - 10 v i d = - 3.5 a, t j = 125 c - - 0.143 v gs = - 10 v i d = - 3.5 a, t j = 175 c - - 0.176 v gs = - 4.5 v i d = - 2.5 a - 0.087 0.115 forward transconductance b g fs v ds = - 15 v, i d = - 3.5 a - 10 - s dynamic b input capacitance c iss v gs = 0 v v ds = - 30 v, f = 1 mhz - 912 1140 pf output capacitance c oss - 100 125 reverse transfer capacitance c rss -6075 total gate charge c q g v gs = - 10 v v ds = - 30 v, i d = - 4.3 a - 26.5 40 nc gate-source charge c q gs -3.8- gate-drain charge c q gd -5.8- gate resistance r g f = 1 mhz 3.4 6.9 10.4 ? turn-on delay time c t d(on) v dd = - 30 v, r l = 8.8 ? i d ? - 3.4 a, v gen = - 10 v, r g = 1 ? -1117 ns rise time c t r -1320 turn-off delay time c t d(off) -3654 fall time c t f -812 source-drain diode ratings and characteristics b pulsed current a i sm --- 25a forward voltage v sd i f = - 3 a, v gs = 0 v - - 0.84 - 1.2 v
SQJ963EP www.vishay.com vishay siliconix s11-1372-rev. a, 18-jul-11 3 document number: 67581 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) output characteristics transfer characteristics on-resistance vs. drain current transfer characteristics transconductance capacitance 0 5 10 15 20 25 0 2 4 6 8 10 i d - drain current (a) v d s -drain-to- s ource voltage (v) v gs gs = 3 v v gs = 4 v 0.0 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 i d - drain current (a) v gs - g ate-to- s ource voltage (v) t c = 25 c t c = - 55 c t c = 125 c 0.00 0.10 0.20 0.30 0.40 0.50 0 6 12 18 24 30 r d s (on) -on-re s i s tance ( ) i d - drain current (a) v gs = 4.5 v v gs = 10 v 0 5 10 15 20 25 0 2 4 6 8 10 i d - drain current (a) v gs - g ate-to- s ource voltage (v) t c = - 55 c t c = 125 c t c = 25 c 0 4 8 12 16 20 0 2 4 6 8 10 g f s - tran s conductance ( s ) i d - drain current (a) t c = 125 c t c = - 55 c t c = 25 c 0 300 600 900 1200 1500 0 10 20 30 40 50 60 c - capacitance (pf) v d s - drain-to- s ource voltage (v) c i ss c o ss c r ss
SQJ963EP www.vishay.com vishay siliconix s11-1372-rev. a, 18-jul-11 4 document number: 67581 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) gate charge source drain diode forward voltage threshold voltage on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage drain source breakdown vs . junction temperature 0 2 4 6 8 10 0 6 12 18 24 30 v gs - g ate-to- s ource voltage (v) q g - total g ate charge (nc) i d = 4.3 a v d s = 30 v 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0. 6 0.8 1.0 1.2 i s - s ource current (a) v s d - s ource-to-drain voltage (v) t j = 25 c t j = 150 c -0.4 -0.1 0.2 0.5 0.8 1.1 - 50 - 25 0 25 50 75 100 125 150 175 v gs (th) variance (v) t j -temperature (c) i d = 250 a i d = 5 ma 0.6 0.9 1.2 1.5 1.8 2.1 - 50 - 25 0 25 50 75 100 125 150 175 r d s (on) -on-re s i s tance (normalized) t j - junction temperature (c) i d = 3.5 a v gs = 4.5 v v gs = 10 v 0.0 0.1 0.2 0.3 0.4 0.5 0246810 r d s (on) -on-re s i s tance ( ) v gs - g ate-to- s ource voltage (v) t j = 150 c t j = 25 c -80 -75 -70 -65 -60 - 50 - 25 0 25 50 75 100 125 150 175 v d s - drain-to- s ource voltage (v) t j - junction temperature (c) i d = 1 ma
SQJ963EP www.vishay.com vishay siliconix s11-1372-rev. a, 18-jul-11 5 document number: 67581 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) safe operating area normalized thermal transient impedance, junction-to-ambient 0.01 0.1 1 10 100 0.01 0.1 1 10 100 i d - drain current (a) v d s - drain-to- s ource voltage (v) * v gs > minimum v gs at which r d s (on) i s s pecied limited by r d s (on) * 1 m s i dm limited t c = 25 c s ingle pul s e bvd ss limited 10 m s 100 s 100 m s , 1 s , 10 s , dc i d limited 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 85 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
SQJ963EP www.vishay.com vishay siliconix s11-1372-rev. a, 18-jul-11 6 document number: 67581 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-case note ? the characteristics shown in the two graphs - normalized transient thermal impedance junction-to-ambient (25 c) - normalized transient thermal im pedance junction-to-case (25 c) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. the data are ext racted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circ uit board - fr4, size 1" x 1" x 0. 062", double sided with 2 oz. copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. vishay siliconix maintains worldwide manufactu ring capability. products may be manufact ured at one of seve ral qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67581 . 10 -3 10 -2 10 -1 10 -4 1 2 1 0.1 0.01 0.2 0.1 0.05 duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 0.02 single pulse
package information www.vishay.com vishay siliconix revision: 27-aug-12 1 document number: 69003 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 powerpak ? so-8l case outline
package information www.vishay.com vishay siliconix revision: 27-aug-12 2 document number: 69003 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? millimeters will gover dim. millimeters inches min. nom. max. min. nom. max. a 1.00 1.07 1.14 0.039 0.042 0.045 a1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 0.004 b4 0.47 0.019 c 0.20 0.25 0.30 0.008 0.010 0.012 d 5.00 5.13 5.25 0.197 0.202 0.207 d1 4.80 4.90 5.00 0.189 0.193 0.197 d2 3.86 3.96 4.06 0.152 0.156 0.160 d3 1.63 1.73 1.83 0.064 0.068 0.072 e 1.27 bsc 0.050 bsc e 6.05 6.15 6.25 0.238 0.242 0.246 e1 4.27 4.37 4.47 0.168 0.172 0.176 e2 (for al product) 2.75 2.85 2.95 0.108 0.112 0.116 e2 (for other product) 3.18 3.28 3.38 0.125 0.129 0.133 f - - 0.15 - - 0.006 l 0.62 0.72 0.82 0.024 0.028 0.032 l1 0.92 1.07 1.22 0.036 0.042 0.048 k 0.51 0.020 w 0.23 0.009 w1 0.41 0.016 w2 2.82 0.111 w3 2.96 0.117 ? 0 - 10 0 - 10 ecn: c12-0026-rev. b, 27-aug-12 dwg: 5976
pad pattern www.vishay.com vishay siliconix revision: 07-feb-12 1 document number: 63818 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 recommended minimum pad for powerpak ? so-8l single recommended mi nimum pad s dimen s ion s in mm (inche s ) 5.000 (0.197) 2.310 (0.091) 0.510 (0.020) 0.595 (0.023) 4.061 (0.160) 3.630 (0.143) 0.410 (0.016) 0.710 (0.028) 0.610 (0.024) 2.715 (0.107) 1.270 (0.050) 1.905 (0.075) 0.860 (0.034) 0.820 (0.032) 7.250 (0.285) 8.250 (0.325) 6.250 (0.246) 1.291 (0.051)
legal disclaimer notice www.vishay.com vishay revision: 12-mar-12 1 document number: 91000 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vish ays terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vi shay product could result in personal injury or death. customers using or selling vishay products no t expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale , including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding th e design or manufacture of the part. please contact authorized vishay personnel t o obtain written terms and conditions regardin g products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of vishay. product names and markings noted herein may be trad emarks of their respective owners. material category policy vishay intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some vishay documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu.
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