rej03g1815-0100 rev.1.00 jul 17, 2009 page 1 of 6 HAT2131R silicon n channel power mos fet power switching rej03g1815-0100 rev.1.00 jul 17, 2009 features ? low on-resistance ? low drive current ? high density mounting ? capable of 4 v gate drive outline renesas package code: prsp0008dd-d (package name: sop-8 ) 1, 2, 3 source 4 gate 5, 6, 7, 8 drain 1 2 3 4 5 6 7 8 g d s d 1 s 2 s 3 4 56 d 7 d 8 absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 350 v gate to source voltage v gss 20 v drain current i d 0.9 a drain peak current i d (pulse) note1 7.2 a body-drain diode reverse drain current i dr 0.9 a body-drain diode reverse drain peak current i dr (pulse) note1 7.2 a channel dissipation pch note2 2.5 w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. when using the glass epoxy board (fr4 40 x 40 x 1.6 mm), pw 10 s
HAT2131R rej03g1815-0100 rev.1.00 jul 17, 2009 page 2 of 6 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 350 ? ? v i d = 10 ma, v gs = 0 zero gate voltage drain current i dss ? ? 0.1 a v ds = 350 v, v gs = 0 gate to source leak current i gss ? ? 0.1 a v gs = 20 v, v ds = 0 gate to source cutoff voltage v gs(off) 1.0 ? 2.5 v v ds = 10 v, i d = 1 ma forward transfer admittance |yfs| 1.2 2.0 ? s i d = 0.45 a, v ds = 10 v note3 r ds(on) ? 2.5 3.0 ? i d = 0.45 a, v gs = 10 v note3 static drain to source on state resistance r ds(on) ? 2.6 3.2 ? i d = 0.45 a, v gs = 4 v note3 input capacitance ciss ? 460 ? pf output capacitance coss ? 32 ? pf reverse transfer capacitance crss ? 8 ? pf v ds = 25 v v gs = 0 f = 1 mhz turn-on delay time t d(on) ? 15 ? ns rise time t r ? 13 ? ns turn-off delay time t d(off) ? 76 ? ns fall time t f ? 50 ? ns i d = 0.45 a v gs = 10 v r l = 556 ? rg = 10 ? total gate charge qg ? 20 ? nc gate to source charge qgs ? 1 ? nc gate to drain charge qgd ? 6 ? nc v dd = 250 v v gs = 10 v i d = 0.9 a body-drain diode forward voltage v df ? 0.8 1.2 v i f = 0.9 a, v gs = 0 note3 body-drain diode reverse recovery time t rr ? 220 ? ns i f = 0.9 a, v gs = 0 di f /dt = 100 a/ s notes: 3. pulse test
HAT2131R rej03g1815-0100 rev.1.00 jul 17, 2009 page 3 of 6 main characteristics 0.1 1 10 3 10 1 drain current i d (a) drain to source on state resistance r ds(on) ( ? ) static drain to source on state resistance vs. drain current (typical) ta = 25 c pulse test 5 4 3 2 1 0 048121620 v g s = 2.2 v drain to source voltage v ds (v) drain current i d (a) typical output characteristics ta = 25 c pulse test 2.4 v 2.6 v 2.8 v 3 v 4 v 10 v 5 4 3 2 1 0 0 12 34 5 tc = 75 c 25 c ? 25 c gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics v ds = 10 v pulse test 10 1 0.1 0.1 1 1000 0.001 0.01 100 drain to source voltage v ds (v) drain current i d (a) maximum safe operation area 100 10 ta = 25 c 1 shot pw = 100 s 10 s operation in this area is limited by r ds(on) 10 8 6 4 2 ? 25 0 25 50 75 100 125 150 0 case temperature tc ( c) static drain to source on state resistance r ds(on) ( ? ) static drain to source on state resistance vs. temperature (typical) (1) v gs = 10 v pulse test 0.45 a 0.1 a i d = 0.9 a 10 8 6 4 2 ? 25 0 25 50 75 100 125 150 0 case temperature tc ( c) static drain to source on state resistance r ds(on) ( ? ) static drain to source on state resistance vs. temperature (typical) (2) v gs = 4 v pulse test 0.45 a 0.1 a i d = 0.9 a 10 v v gs = 4 v
HAT2131R rej03g1815-0100 rev.1.00 jul 17, 2009 page 4 of 6 800 0 16 600 12 400 8 200 0 4 816243240 0 i d = 0.9 a ta = 25 c v ds v gs gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) dynamic input characteristics (typical) v ds = 250 v 100 v v ds = 100 v 250 v 0 0.2 0.4 0.6 0.8 1.0 source to drain voltage v sd (v) reverse drain current vs. source to drain voltage (typical) reverse drain current i dr (a) 0 40 80 120 160 200 case temperature tc ( c) gate to source cutoff voltage vs. case temperature (typical) gate to source cutoff voltage v gs(off) (v) 0 2.5 -25 0 25 50 75 100 125 150 1.0 0.5 1.5 2.0 0 5 2 1 3 4 v ds = 10 v i d = 10 ma 1 ma 0.1 ma v gs = 0 v ta = 25 c pulse test 10000 1000 100 10 1 capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage v gs = 0 f = 1 mhz ta = 25 c ciss coss crss 110 1000 100 10 reverse drain current i dr (a) reverse recovery time t rr (ns) body-drain diode reverse recovery time (typical) di / dt = 100 a / s v gs = 0, ta = 25 c
HAT2131R rej03g1815-0100 rev.1.00 jul 17, 2009 page 5 of 6 t r t d(on) vin 90% 90% 10% 10% vout t d(off) 90% 10% t f switching time test circuit switching time waveform vin monitor d.u.t. vin 10 v r l vout monitor 10 ? v dd = 250 v 10 100 1 m 10 m 100 m 1 10 100 1000 10000 10 1 0.1 0.01 0.001 0.0001 d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse pulse width pw (s) normalized transient thermal impedance vs. pulse width normalized transient thermal impedance s (t) p dm pw t d = pw t ch ? f (t) = s (t) ch ? f ch ? f = 83.3c/w, ta = 25c when using the glass epoxy board (fr4 40 40 1.6 mm)
HAT2131R rej03g1815-0100 rev.1.00 jul 17, 2009 page 6 of 6 package dimensions p- so p 8 - 3 . 95 ordering information part no. quantity shipping container HAT2131R-el-e 2500 pcs taping
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