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inchange semiconductor product specification silicon npn power transistors BUH313 description ? with to-3pml package ? high voltage ? high speed switching applications ? horizontal deflection for color tv ? switch mode power supplies. pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1300 v v ceo collector-emitter voltage open base 600 v v ebo emitter-base voltage open collector 10 v i c collector current (dc) 5 a i cm collector current-peak t p <5ms 10 a p tot total power dissipation t c =25 ?? 50 w t j operating junction temperature 150 ?? t stg storage temperature -65~150 ?? fig.1 simplified outline (to-3pml) and symbol
inchange semiconductor product specification 2 silicon npn power transistors BUH313 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma; i b =0 600 v v (br)ebo emitter-base breakdown voltage i e =10ma; i c =0 10 v v cesat collector-emitter saturation voltage i c =3a ;i b =0.75a 1.5 v v besat base-emitter saturation voltage i c =3a ;i b =0.75a 1.3 v i ces collector cut-off current v ce =1300v ; v be =0 0.2 ma i ebo emitter cut-off current v eb =5v; i c =0 0.1 ma h fe-1 dc current gain i c =1a ; v ce =5v 10 h fe-2 dc current gain i c =3a ; v ce =5v 5.5 thermal characteristics symbol parameter max unit r th j-c thermal resistance from junction to case 2.8 ?? /w
inchange semiconductor product specification 3 silicon npn power transistors BUH313 package outline fig.2 outline dimensions

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