|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
inchange semiconductor isc product specification isc silicon npn power transistor 2SD904 description high breakdown voltage- : v cbo = 1500v (min) low collector saturation voltage- : v ce(sat) = 5.0v(max.)@ i c = 3a built-in damper diode applications designed for color tv horiz ontal output applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 1500 v v ceo collector-emitter voltage 600 v v ebo emitter-base voltage 6 v i c collector current- continuous 7 a i cm collector current- peak 10 a collector power dissipation @ t a = 25 3 p c collector power dissipation @ t c = 25 50 w t j junction temperature 150 t stg storage temperature range -40~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD904 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma; i b = 0, l= 35mh 600 v v (br)ebo emitter-base breakdown voltage i e = 200ma; i c = 0 6 v v ce (sat) collector-emitter saturation voltage i c = 3a; i b = 0.75a b 5.0 v v be (sat) base-emitter saturation voltage i c = 3a; i b = 0.6a b 1.6 v i ces collector cutoff current v cb = 1500v; v be = 0 1.0 ma i ebo collector cutoff current v eb = 4v; i c = 0 44 100 ma h fe-1 dc current gain i c = 1a; v ce = 5v 8 h fe-2 dc current gain i c = 4a; v ce = 5v 5 10 v ecf c-e diode forward voltage i f = 4a 2.0 v isc website www.iscsemi.cn 2 |
Price & Availability of 2SD904 | |
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |