elektronische bauelemente SSF7401 -30v , -2a p-ch enhancement mode mosfet 18-oct-2011 rev. b page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. so t -323 rohs compliant product a suffix of ?-c? specifies halogen & lead-free description the SSF7401 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltage as low as 2.5v. it can be used for a wide variety of applications, including load switching, low current invert ers and low current dc-dc converters. the SSF7401 is universally used for all commercial-industrial applications. features small package outline lower gate charge marking code package information package mpq leader size sot-323 3k 7 inch absolute maximum ratings parameter symbol ratings unit drain-source voltage v dss -30 v gate-source voltage v gss 12 v t a =25 c -2 a continuous drain current 3 t a =70 c i d -1.5 a pulsed drain current 1.2 i dm -10 a linear derating factor 0.0028 c / w power dissipation p d 0.35 w thermal resistance junction-ambient 3 r ja 360 c / w operating junction and storage temperature t j , t stg -55~150 c note: 1. pulse width limited by max. junction temperature. 2. pulse width 300 Q s, duty cycle 2%. Q 3. surface mounted on fr4 board, t 10sec Q ? ? g ? ? s d ? ? millimete r millimete r ref. min. max. ref. min. max. a 1.80 2.20 g 0.100 ref. b 1.80 2.45 h 0.525 ref. c 1.15 1.35 j 0.08 0.25 d 0.80 1.10 k - - e 1.20 1.40 l 0.650 typ. f 0.20 0.40 top view a l c b d g h j f k e 1 2 3 1 2 3 7401
elektronische bauelemente SSF7401 -30v , -2a p-ch enhancement mode mosfet 18-oct-2011 rev. b page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t j =25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions drain-source breakdown voltage v (br)dss -30 - - v v gs =0, i d = -250 a gate threshold voltage v gs(th) -0.5 - -1.2 v v ds =v gs , i d = -250 a gate body leakage current i gss - - 100 na v gs = 12v t j = 25c - - -1 v ds = -30v, v gs =0 zero gate voltage drain current t j = 70c i dss - - -10 a v ds = -24v, v gs =0 - - 120 v gs = -10v, i d = -2a - - 150 v gs = -4.5v, i d = -1.5a drain-source on-state resistance r ds(on) - - 190 m ? v gs = -2.5v, i d = -1a forward transconductance g fs - 4 s v ds = -5v, i d = -1.2a gate resistance r g - 12 - ? f=1.0mhz dynamic total gate charge 2 q g - 5.06 - gate-source charge q gs - 0.72 - gate-drain (??miller??)charge q gd - 1.58 - nc v ds = -15v, v gs = -4.5v, i d = -1a input capacitance c iss - 409 - output capacitance c oss - 55 - reverse transfer capacitance c rss - 42 - pf v ds = -15v, v gs =0, f =1mhz t d(on) - 6.2 - turn-on time 2 t r - 3.2 - t d(off) - 41.2 - turn-off time t f - 14.5 - ns v ds = -15v, r l =15 ? , v gs = -10v, r g =3 ? source-drain diode diode forward voltage 2 v sd - - -1 v i s = -1a,v gs =0 reverse recovery time 2 t rr - 13.2 - ns reverse recovery charge q rr - 5.4 - nc i s =-1a,v gs =0, dl/dt=100a / s continuous source current (body diode) i s - - -0.5 a v d = v g =0, v s = -1v note: 1. pulse width limited by max. junction temperature. 2. pulse width 300 Q s, duty cycle 2%. Q 3. surface mounted on fr4 board, t. 10sec Q
elektronische bauelemente SSF7401 -30v , -2a p-ch enhancement mode mosfet 18-oct-2011 rev. b page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
elektronische bauelemente SSF7401 -30v , -2a p-ch enhancement mode mosfet 18-oct-2011 rev. b page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
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