elektronische bauelemente SSF7400 30v , 1.7a , r ds(on) 85m ? n-ch enhancement mode power mosfet 25-aug-2011 rev. b page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. 7400 rohs compliant product a suffix of -c? specifies halogen & lead-free description the SSF7400 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltage as low as 2.5v. it can be used for a wide variety of applications, including load switching, low current invert ers and low current dc-dc converters. features lower gate charge small package outline marking package information package mpq leader size sot-323 3k 7 inch absolute maximum ratings ( t a =25c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 30 v gate-source voltage v gs 12 v t a =25c 1.7 continuous drain current 3 t a =70c i d 1.3 a pulsed drain current 1,2 i dm 10 a power dissipation t a =25c p d 0.35 w linear derating factor 0.0028 w / c operating junction and st orage temperature range t j , t stg -55~150 c thermal resistance rating maximum junction to ambient 3 r ? ja 360 c / w notes: 1. pulse width limited by max. junction temperature. 2. pulse width Q 300us, duty cycle Q 2%. 3. surface mounted on fr4 board, t Q 10sec. sot-323 top view a l c b d g h j f k e 1 2 3 1 2 3 millimete r millimete r ref. min. max. ref. min. max. a 1.80 2.20 g 0.100 ref. b 1.80 2.45 h 0.525 ref. c 1.15 1.35 j 0.08 0.25 d 0.80 1.10 k - - e 1.20 1.40 l 0.650 typ. f 0.20 0.40
elektronische bauelemente SSF7400 30v , 1.7a , r ds(on) 85m ? n-ch enhancement mode power mosfet 25-aug-2011 rev. b page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage bv dss 30 - - v v gs =0, i d =250 a gate-threshold voltage v gs(th) 0.6 - 1.4 v v ds =v gs , i d =250 a gate-body leakage current i gss - - 100 na v gs =12v - - 1 v ds =30v, v gs =0 drain-source leakage current i dss - - 5 a v ds =24v, v gs =0 - - 85 v gs =10v, i d =1.5a - - 100 v gs =4.5v, i d =1.5a drain-source on-resistance 1 r ds(on) - - 140 m ? v gs =2.5v, i d =1a forward transconductance g fs - 4 - s v ds =5v, i d =1.5a dynamic total gate charge 1 q g - 4.82 - gate-source charge q gs - 0.62 - gate-drain (?miller?) change q gd - 1.58 - nc v ds =15v, v gs =4.5v, i d =1.7a turn-on delay time 1 t d(on) - 2.5 - rise time t r - 2.3 - turn-off delay time t d(off) - 22 - fall time t f - 3 - ns v ds =15v, v gs =10v, r g =3 ? , r l =10 ? , input capacitance c iss - 390 - output capacitance c oss - 54.4 - reverse transfer capacitance c rss - 41 - pf v gs =0, v ds =15v, f=1.0mhz gate resistance rg - 3 - ? f=1.0mhz source-drain diode continuous source current ( bod y diode ) i s - - 0.5 a v g =v d =0, v s =1v diode forward voltage 1 v sd - - 1 v i s =1a, v gs =0 reverse recovery time 1 t rr - 10 - ns reverse recovery charge q rr - 3.6 - nc i s =1.7a, v gs =0 di/dt=100a/ s notes: 1. pulse width Q 300us, duty cycle Q 2%.
elektronische bauelemente SSF7400 30v , 1.7a , r ds(on) 85m ? n-ch enhancement mode power mosfet 25-aug-2011 rev. b page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
elektronische bauelemente SSF7400 30v , 1.7a , r ds(on) 85m ? n-ch enhancement mode power mosfet 25-aug-2011 rev. b page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
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