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| savantic semiconductor product specification silicon pnp power transistors 2SB536 description with t o-220c package complement to type 2sd381 low collector saturation voltage applications audio frequency power amplifier low speed power switching pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -130 v v ceo collector-emitter voltage open base -120 v v ebo emitter-base voltage open collector -5 v i c collector current -1.5 a i cm collector current-peak -3.0 a i b base current -0.3 a t a =25 1.5 p t total power dissipation t c =25 20 w t j junction temperature 150 t stg storage temperature -50~150 fig.1 simplified outline (to-220) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SB536 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-10ma; i b =0 -120 v v cesat collector-emitter saturation voltage i c =-1a; i b =-0.1a -2.0 v v besat base-emitter saturation voltage i c =-1a; i b =-0.1a -1.5 v i cbo collector cut-off current v cb =-120v; i e =0 -1.0 a i ebo emitter cut-off current v eb =-3v; i c =0 -1.0 a h fe-1 dc current gain i c =-5ma ; v ce =-5v 25 h fe-2 dc current gain i c =-0.3a ; v ce =-5v 40 250 c ob output capacitance i e =0 ; v cb =-10v; f=1mhz 35 pf f t transition frequency i c =-0.1a ; v ce =-5v 40 mhz h fe-2 classifications n m l k 40-80 60-120 80-160 120-250 savantic semiconductor product specification 3 silicon pnp power transistors 2SB536 package outline fig.2 outline dimensions (unindicated tolerance: 0.10mm) |
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